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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2663-2674 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical constants for thin layers of strained InAs, AlAs, and AlSb have been investigated by spectroscopic ellipsometry and multi-sample analyses. These materials are important for high-speed resonant tunneling diodes in the AlAs/InAs/In0.53Ga0.47As and AlSb/InAs material systems. Understanding the optical properties for these thin layers is important for developing in situ growth control using spectroscopic ellipsometry. Ex situ room-temperature measurements were made on multiple samples. The resulting fitted optical constants are interpreted as apparent values because they are dependent on the fit model and sample structure. These apparent optical constants for very thin layers can be dependent on thickness and surrounding material, and are generally applicable only for layers found in a similar structural context. The critical point features of optical constants for the strained layers and for the thin unstrained cap layers were found to differ from bulk values, and three principle effects (strain, quantum confinement, and thin-barrier critical-point broadening) have been identified as responsible. Of these three, the broadening of the E1 and E1+Δ1 critical points for thin barrier material is the newest and most pronounced. This thin barrier effect is shown to be a separate effect from strain, and is also observable for the AlAs/GaAs system. © 1996 American Institute of Physics.
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  • 2
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the fabrication and dc, microwave characteristics of 0.1 μm, Schottky-collector resonant tunnel diodes (SRTDs) in the AlAs/In0.53Ga0.47As/InP material system. Devices with contact areas as small as 0.05 μm2 have been fabricated using electron beam lithography with an interrupted footprint T-gate process. SRTD's fabricated with 1.4 nm AlAs barriers exhibited a 5×105 A/cm2 peak current density at 0.95 V and a −19 mS/μm2 peak negative conductance. The devices incorporate fully depleted P-doped cap layers to suppress surface leakage currents. From the measured dc and microwave characteristics, a maximum frequency of oscillation fmax=2.2 THz is estimated. © 1995 American Institute of Physics.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 25-31 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We present experimental results obtained with a cryogenically cooled, high-resolution x-ray spectrometer based on a 141 μm×141 μm Nb-Al-Al2O3-Al-Nb superconducting tunnel junction (STJ) detector in a demonstration experiment. Using monochromatized synchrotron radiation we studied the energy resolution of this energy-dispersive spectrometer for soft x rays with energies between 70 and 700 eV and investigated its performance at count rates up to nearly 60 000 cps. At count rates of several 100 cps we achieved an energy resolution of 5.9 eV (FWHM) and an electronic noise of 4.5 eV for 277 eV x rays (the energy corresponding to C K). Increasing the count rate, the resolution 277 eV remained below 10 eV for count rates up to ∼10 000 cps and then degraded to 13 eV at 23 000 cps and 20 eV at 50 000 cps. These results were achieved using a commercially available spectroscopy amplifier with a baseline restorer. No pile-up rejection was applied in these measurements. Our results show that STJ detectors can operate at count rates approaching those of semiconductor detectors while still providing a significantly better energy resolution for soft x rays. Thus STJ detectors may prove very useful in microanalysis, synchrotron x-ray fluorescence (XRF) applications, and XRF analysis of light elements (K lines) and transition elements (L lines). © 1998 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 5106-5108 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report improved peak-to-valley current ratios and peak current densities in InAs/AlSb double-barrier, negative differential resistance tunnel structures. Our peak-to-valley current ratios are 2.9 at room temperature and 10 at liquid-nitrogen temperatures. Furthermore, we have observed peak current densities of 1.7×105 A/cm2. These figures of merit are substantially better than previously reported values. The improvements are obtained by adding spacer layers near the barriers, thinner well regions, and thinner barriers.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3836-3844 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Energy-band diagrams of single-barrier heterostructures are calculated by solving Poisson's equation self-consistently. The implications of these energy-band profiles for the electronic properties of a few tunnel structures of current interest are discussed. The voltage drops across the cladding layers are found to be significant, in contrast with the commonly made assumption that all of the applied voltage drops linearly across the barrier layer. Furthermore, energy-band diagrams have substantial effects upon calculated tunneling current-voltage characteristics, which are extremely sensitive to the actual shape of the barrier through which the charge carriers tunnel. It is found that, in some cases, the dominant current transport mechanisms may be quite different from those expected when band bending is neglected.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 211-214 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strained Ga1−xInxSb/InAs superlattices exhibiting a high degree of structural perfection have been grown on GaSb substrates. The superlattices display ideal, defect-free structure, to within the resolution limits of transmission electron microscopy (TEM) and high-resolution x-ray diffraction. Cross-sectional micrographs reveal the layers to be highly planar, regular, and coherently strained to the GaSb substrates. No crystalline defects were observable by TEM, despite an internal lattice mismatch of almost 2%. Planarity of the layers is confirmed by the presence of Pendellösung fringes in high-resolution x-ray diffraction, while the observation of numerous sharp satellite peaks indicates little or no interdiffusion within the superlattices. Observed x-ray diffraction is closely fit by simulations based on a kinematical model which accounts properly for the highly strained interfaces and absence of strict translational symmetry in the superlattice growth direction. Based on this fit, an InSb-rich character is assigned to the interfaces, yielding superlattice layer thicknesses and compositions that are in quantitative agreement with those derived from independent growth rate calibrations.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3744-3746 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The current-voltage (I-V) behavior of a GaSb(p)/AlSb/InAs/AlSb/GaSb(p) resonant interband tunneling (RIT) heterostructure is analyzed experimentally and theoretically. The structure has been successfully grown on a (100)-oriented GaAs substrate by molecular-beam epitaxy, demonstrating that more exotic lattice-matched substrates (such as InAs or GaSb) are not required for RIT devices. Theoretical simulations of I-V behavior are developed, employing a two-band tight-binding model. Experimental I-V curves show pronounced negative differential resistance, with a peak-to-valley current ratio of 8.3 at 300 K. Good agreement is observed between measured and calculated peak current densities, consistent with light-hole tunneling through the confined InAs conduction-band state.
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3700-3702 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the characterization of a set of broad-area semiconductor diode lasers with mid-wave infrared (3–5 μm) emission wavelengths. The active region of each laser structure is a 5- or 6-period multiple quantum well (MQW) with Ga0.75In0.25As0.22Sb0.78 barriers and type-II (broken-gap) Ga0.75In0.25Sb/InAs superlattice wells. The cladding layers of each laser structure are n- and p-type InAs/AlSb (24 A(ring) /24 A(ring)) superlattices grown lattice-matched to a GaSb substrate. By tailoring constituent layer thicknesses in the Ga0.75In0.25Sb/InAs superlattice wells, laser emission wavelengths ranging from 3.28 μm (maximum operating temperature=170 K) to 3.90 μm (maximum operating temperature=84 K) are obtained. © 1995 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1673-1675 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report experimental observation of room-temperature current gains as large as 50 in a novel transistor grown in the InAs/GaSb/AlSb material system. Due to the unique degree of flexibility this material system offers in choosing band alignments, the base and collector terminals are separated by a quantum barrier while electrons traveling between the emitter and collector terminals do not tunnel across any classically forbidden regions, even though a quasi-bound state exists in the quantum well collector. This asymmetry in current conduction between the terminals of the device leads to transistor action: applying a bias to the base terminal electrostatically modulates the emitter-collector current through Stark shifts of the energy levels in the quantum well collector, while the quantum barrier between the base and collector terminals suppresses the base current. Because transport through the structure is dependent on resonant transmission, this novel transistor holds promise for the fabrication of high-speed circuits.
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2675-2677 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have performed a theoretical and experimental analysis of current transport in InAs/GaSb/InAs interband tunneling devices as a function of GaSb layer width. Our results demonstrate that current transport in these devices occurs not through simple ohmic conduction, as had been previously proposed, but via light-hole-like resonances in the GaSb valence band formed due to the imperfect matching of InAs conduction-band and GaSb valence-band wave functions at the InAs/GaSb interfaces. These resonances produce a strong dependence of the current-voltage characteristics on GaSb layer width that is both predicted theoretically and observed experimentally. Our results also suggest that coupling between InAs conduction-band and GaSb heavy-hole valence-band states is relatively unimportant in these devices. In addition, we have been able to obtain peak current densities of ∼9×104 A/cm2, significantly higher than any previously reported current densities for this structure.
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