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  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 110 (1999), S. 6812-6819 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The photodissociation of S2Cl2 at 248 and 193 nm has been studied by translational spectroscopy. Upon excitation at 248 nm, S2Cl2 undergoes predominantly the dissociation channels to form the products, (1) S2Cl+Cl and (2) SCl+SCl. The relative yield of (1)/(2) was determined at ∼3.0:1.0. The S2Cl+Cl products were detected with two separate product translational energy distributions of 〈Et〉=14 and 41 kcal/mol. The slow S2Cl fragment, which is internally excited, undergoes a secondary dissociation to form S2+Cl. Dissociation mechanisms which are consistent with the isotropic recoiling are proposed: the slow component could arise from the ground electronic state while the fast component would more likely originate from a mixed excitation of 1A and 1B states (C2 symmetry). The SCl product with anisotropy parameter β=1.6, on the other hand, should proceed by an excited 1B state. At 193 nm, a three-body formation of S2+2Cl becomes the more efficient process than the simple S–Cl or S–S bond fission. Assuming that the rupture of both S–Cl bonds occurs in a single kinetic step, a P(Et) distribution with 〈Et〉=30 kcal/mol is determined. Because of the measured β=−0.3 for the formation of triple products, a higher 1B state will be involved in the excitation. © 1999 American Institute of Physics.
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2857-2863 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A major remaining challenge for III/V semiconductor materials is the development of materials for photonic devices operating in the infrared region of the spectrum. Atmospheric transmission windows exist in the wavelength ranges from 2 to 4.5 and from 8.5 to 12 μm. Thus, emitters and, particularly, detectors operating in these wavelength ranges are important for many applications. Materials for devices operating in the longer-wavelength 8–12 μm region have typically not been III/V semiconductors because the lowest-band-gap conventional III/V alloy is InAsSb, with a 77 K band gap of 0.145 eV, corresponding to a wavelength of 8.5 μm. Previous work has shown that the addition of Bi to InAsSb alloys grown by organometallic vapor-phase epitaxy results in a rapid reduction in the band-gap energy. However, very low temperatures were required to obtained significant levels of Bi incorporation into the solid, due to the immiscibility of Bi in InAsSb. The low growth temperatures result in high carbon contamination levels using conventional precursors. Clearly, new precursors are required for low-temperature growth of these alloys without excessive levels of carbon contamination. New results for the organometallic vapor-phase-epitaxy growth of InAs1−x−ySbxBiy alloys are presented using the novel precursors tertiarybutylarsine, tertiarybutyldimethyl-antimony, and ethyldimethylindium. Alloys have been studied over the entire range of Sb/As ratios in the solid. For growth at 350 °C, the maximum Bi concentration yielding layers without the presence of a liquid second phase was found to be highest for x=0 (y=0.045) and lowest for x=0.7 (y=0.015). These levels of Bi incorporation yield calculated 77 K band gaps of 0.08 eV for the alloy with x=0.5 and y=0.015. These layers have several orders of magnitude lower levels of carbon contamination than reported previously.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7139-7141 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: With better than 1% control of alloy composition, binary alloy films CoxNi1−x/Cu(100) with x≤10% were prepared for the study of the spin-reorientation transition at variations of composition, thickness, and temperature. Only the films with a Co concentration less than 10% reveal the spin-reorientation with the film thickness. The critical thickness for the spin-reorientation transition was shifted drastically from 7.5 to 17.5 monolayers for a Co concentration variation from 0% to 8%. These findings indicate a strong influence of the composition on the magnetoelastic anisotropy. A kind of temperature-driven spin-reorientation from in-plane to perpendicular with increasing temperature was also found. © 2001 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7153-7155 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetic and structural properties were investigated for the 2 ML Co/Cu(100) films grown at various temperatures from 125 to 350 K. By precisely controlling the film thickness, the influence of thickness on Curie temperature (TC) due to the finite size effect can be excluded. The Curie temperature of the 2 ML Co keeps almost invariant for the growth temperature (Tg) below 250 K, and drops drastically at Tg higher than 275 K. For Tg=340 K, TC dropped to 170 K which is only about half of 325 K for Tg=125 K. Accompanied with the increase of TC for the films grown at lower temperatures, the remanent Kerr signal as well as coercivity were enhanced. According to a simple theoretical estimation, the change of TC due to the variation of the magnetization and anisotropy was found to be consistent with the experimental results. The enhancement in TC or magnetization and anisotropy with various Tg should be traced back to the presence of island growth in the films grown at lower temperatures. © 2001 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4916-4921 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The roughness evolution of the Cu6Sn5 intermetallic compound during the soldering reaction of 40/60% (by wt %) PbSn solder on Cu and its effects on wettability were studied due to their importance in the reworking of microelectronic components. The roughness parameters investigated were Rrms and the ratio, Rrms/λa, where Rrms is the root mean square roughness and λa is the average distance between asperities. It was found that Rrms increased with soldering time for the range of soldering times studied. The evolution of Rrms was found to follow a parabolic relation with soldering time—which is similar to that observed for the intermetallic thickness. However, the ratio Rrms/λa was found to increase very gradually for the range of soldering times investigated. From the ratio Rrms/λa obtained, the average inclination of the intermetallic morphology was calculated. The average inclination of the Cu6Sn5 intermetallic morphology was found to be greater than the apparent contact angle observed during the wetting of the 40/60% PbSn solder on Cu substrates. This inconsistency was attributed to the difference in the roughness of the Cu6Sn5 intermetallic in the inner regions and at the reaction band at the edge of the solder cap. © 1999 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of the American Chemical Society 44 (1922), S. 1999-2008 
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 85 (1986), S. 10-12 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A total of 37 absorption bands, lying between 3785 and 4805 A(ring), have been observed during the pyrolysis of S2Cl2 at 750 K. These bands have been tentatively assigned to transitions between the X˜ A‘ state of S2Cl to an unidentified electronically excited state with vibrational frequencies ω'1 =480 cm−1 and ω2 =407 cm−1. From this assignment it follows that the ground state vibrational frequencies are ω‘1 =659 cm−1, ω‘2 =600 cm−1, and ω‘3 =336 cm−1. A simple molecular orbital diagram has been constructed from the frontier orbitals of S2 and Cl. The predicted changes in the bond strengths and bond angles between the ground state and the excited state are consistent with experimental assignments.
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  • 8
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of chemical & engineering data 18 (1973), S. 241-243 
    ISSN: 1520-5134
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1809-1811 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Self-alignment of quantum dots separated by spacer layers is investigated by using a three-dimensional finite element method. We find that the morphology of the top islands is not just simply a reproduction of the buried islands. It is dependent on the arrangement of the buried islands, the interruption time, and the spacer layer thickness. If the buried islands are uniform and regular, with appropriate choice of their spacing and aspect ratio and with a thin spacer layer, there exists a regime in which the steady-state top islands are always uniform and regular, vertically aligned, and stable against small perturbations. For a thicker spacer layer, due to the change of the strain energy density distribution on top of the spacer layer, the top islands are misaligned with the buried islands. If the buried islands are not uniform and regular, our simulations demonstrate the top islands may self-assemble into more uniform and regular arrangements. © 1999 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3635-3637 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We carried out experiments and numerical simulations to investigate the transport of Sn in a composite solder joint, comprising of high-Pb and high-Sn (SnPb) alloys, in a chip-composite solder-organic substrate package during the reflow process. Both the experimental and simulation results demonstrate that surface diffusion causes the transport of Sn on the surface to be faster than that inside the solder joint. Surface diffusion also accelerates the homogenization process of the composite solder joint. © 1999 American Institute of Physics.
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