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  • 1
    Electronic Resource
    Electronic Resource
    The influence of ambient magnetic environments on high-Tc superconducting quantum interference device gradiometers (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 8783-8791 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The performance of high-temperature superconducting gradiometers have been evaluated in fields of up to 70 μT to determine their limitations in unshielded environments. The sensors incorporate first-order gradiometric superconducting quantum interference devices (SQUIDs) coupled to first-order gradiometric flux transformers. A gradiometer was operated successfully at all angles with respect to an ambient field with less than 20% variation in critical current and voltage/flux ratio. Magnetic hysteresis at 77 K was measured for field excursions up to 70 μT. The hysteresis factor, referred to the SQUID, averaged 10−3 Φ0/μT. Flux movement in the SQUID washers rather than the flux transformer was found to be the dominant cause of the hysteresis and the presence of the flux transformer reduced the hysteresis. This is interpreted as due to the coupling coil pinning the vortices against radial motion. The spectral noise density of the gradiometer was only weakly dependent on the orientation with respect to static fields of up to 70 μT except for narrow angular ranges where dominating random telegraph signal processes occurred. In contrast, field cooling the gradiometer above 15 μT was found to substantially increase the low-frequency noise. A gradiometer was successfully transported and operated out of doors with no shielding. Only a relatively minor degradation of performance was observed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362504
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  • 2
    Electronic Resource
    Electronic Resource
    Effect of small changes in composition on the electrical and structural properties of YBa2Cu3O7 thin films (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2016-2018 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial thin films of YBa2Cu3O7 have been grown in situ by evaporation onto (001) MgO substrates. The composition was varied systematically to investigate the effects of changes in Cu content and Ba/Y ratio on the film properties. The results demonstrate that deviations from stoichiometry at the limit of resolution of most analytic techniques can have a large effect on structural and transport properties, as well as causing marked changes in surface morphology. The best properties (Jc(approximately-greater-than)3×106 A/cm2 at 77 K) are only found for a narrow range of compositions, which can be readily identified from the surface morphology.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104152
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  • 3
    Electronic Resource
    Electronic Resource
    Evidence of interfacial melting during pulsed laser irradiation of Ni2Si on Si (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 649-651 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interfacial melting of thin (∼65 nm) Ni2Si films thermally grown on 〈111〉 Si has been observed after pulsed laser irradiation. Low-energy implanted Bi was used as a marker to detect surface melting. Rutherford backscattering spectrometry has shown that the energy density threshold for interfacial mixing was lower than the one at which changes in the Bi profile occurred. Cross-section transmission electron microscopy performed on those samples has shown the existence of a reacted layer, ∼20 nm, at the silicide/silicon interface while no change in the structure of the outermost 50 nm was observed. The reacted layer formed sharp interfaces with both the underlying silicon and the silicide. Interfacial melting has been related to the presence in the phase diagram of an eutectic between the compound and the pure silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98344
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  • 4
    Electronic Resource
    Electronic Resource
    Growth of CdTe-InSb multilayer structures on (100) InSb substrates using molecular beam epitaxy (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1847-1849 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Molecular beam epitaxy has been used to grow multilayer structures of CdTe/InSb on (100)InSb substrates. To minimize interdiffusion effects, a particularly low growth temperature was used. This study presents the first transmission electron microscope and secondary-ion mass spectrometer investigations of this multilayer system. The work clearly demonstrates that the multilayers have high structural quality and that there is no large scale interdiffusion of the matrix elements. Roughening is observed at the "InSb grown on CdTe'' interface, although only relatively minor undulations are present at the inverted interface. A possible explanation for this effect is described.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100373
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  • 5
    Electronic Resource
    Electronic Resource
    Material-dependent amorphization and epitaxial crystallization in ion-implanted AlAs/GaAs layer structures (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1211-1213 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: When AlAs/GaAs layer samples are subjected to Ar+ ion bombardment at liquid-nitrogen temperature, it is shown that very different damage structures are produced in the two materials. While the GaAs is relatively easily amorphized, the AlAs is quite resistant to damage accumulation and remains crystalline for the ion doses employed in these investigations. Epitaxial regrowth of buried amorphous GaAs layers of thicknesses up to 150 nm can be induced by rapid thermal annealing. It is demonstrated that differences in the initial damage state have a strong influence upon the nature of lattice defects produced by annealing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101657
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  • 6
    Electronic Resource
    Electronic Resource
    Narrow tracks in YBa2Cu3O7 thin films defined by laser ablation (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 75-77 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The use of cw laser ablation for defining narrow tracks in YBa2Cu3O7 thin films on (001) SrTiO3 substrates is described. Critical current densities have been observed up to 5×105 A/cm2 in 4-μm-wide tracks at 77 K. For these films, it is found that the value of critical current density calculated is insensitive to the length of track and the voltage criterion used.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101438
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  • 7
    Electronic Resource
    Electronic Resource
    X-ray microanalysis of InGaAs/InP multilayer structures grown by metalorganic chemical vapor deposition (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 2293-2299 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray microanalysis in a scanning transmission electron microscope can be employed to determine concentration profiles with a spatial resolution of (approximately-less-than)2 nm across layer interfaces in III-V compound semiconductor multilayer structures. Here we describe its application to the InGaAs/InP multilayer system grown by metalorganic chemical vapor deposition at atmospheric pressure. The results show that even when the material is structurally perfect, there can be a significant As and Ga content beyond the boundaries of the InGaAs layers. Furthermore, the composition profiles can show a marked asymmetry relating to the growth direction. The results are consistent with previous imaging observations but provide quantitative information with high spatial resolution on individual element distributions. This combination of analytical attributes is not available using any other assessment technique.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342843
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  • 8
    Electronic Resource
    Electronic Resource
    Ion beam crystallography of InGaAs epitaxial layers on InP substrates (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2639-2641 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the first direct measurements of the strain in a series of In1−xGaxAs/InP structures by ion beam crystallography. A compression strain of 0.0152±0.0008 was obtained for an In0.47Ga0.53As epitaxial layer on an InP substrate compared with an expansion strain of 0.0126±0.0010 for an In0.58Ga0.42As layer structure. The method used allows quantitative strain measurements to be performed without the need for computer simulations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337087
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  • 9
    Electronic Resource
    Electronic Resource
    Molecular-beam epitaxy of (100) InSb for CdTe/InSb device applications (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 1526-1532 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interest in InSb and InSb-based heterostructures has recently been renewed in view of their important potential applications in infrared, logic, and novel quantum-well devices. Our work to date has concentrated on the growth of CdTe/InSb multilayer structures in which the properties of the InSb constituent layers have a very significant influence on subsequent device performance. The present paper describes data obtained during a systematic investigation of the growth, using molecular-beam epitaxy (MBE), of (100) InSb homoepitaxial layers, specifically for CdTe/InSb device applications. Modulated-beam mass spectrometry experiments have shown that polycrystalline InSb can be used as an MBE source of antimony, and the properties of InSb epilayers grown using either elemental antimony or polycrystalline InSb as the group-V source are compared. Cross-sectional transmission electron microscope analysis indicates that very high structural quality layers can be produced and has also identified the mechanisms which give rise to structural breakdown in layers grown under nonoptimum conditions. All unintentionally doped InSb layers grown to date have exhibited n-type conductivity (n(approximately-greater-than)3×1015 cm−3) and secondary ion mass spectrometry data has indicated the presence of tellurium, sulfur, and selenium contamination. The mechanisms by which tellurium and sulfur become incorporated in the grown layers are identified.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339936
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  • 10
    Electronic Resource
    Electronic Resource
    End point detection in ion beam milling of YBa2Cu3O7 thin films (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 228-230 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In the processing of high temperature superconductor thin films into devices, the use of calibrated milling rates has proved unreliable as a means of determining the milled depth. This problem has been solved using in situ secondary ion mass spectrometry for identifying interfaces in multilayers based on YBa2Cu3O7. The depth resolution obtained during routine patterning of typical multilayers was ∼4 nm. Accurate termination of milling at an insulator/superconductor interface has been demonstrated. The presence of water vapor during milling has been shown to affect the proportions of the different secondary ion species, but has only a slight affect on the milling rate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108192
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