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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3865-3871 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nonlinear piezoelectric photoacoustic (PA) effect of silicon wafers in the applied dc electric field is studied experimentally and theoretically. The apparent nonlinear dependencies of PA amplitude and phase on the laser power are observed in experiments with different dc electric fields. The nonlinearity is explained theoretically by considering the nonlinear surface and bulk Auger recombinations. We present a "subsurface approximation'' method to solve the nonlinear transport equation for photogenerated carriers in semi-infinite samples. A good agreement between the experimental results and theoretical predictions is obtained as the incident laser beam with and/or less than medium power.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1088-1093 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The piezoelectric photoacoustic effect of silicon wafers with a p/n junction in the dc electric field is studied experimentally and theoretically. Based on the transport properties of semiconductors, four kinds of thermal wave sources are considered: (i) instantaneous intraband nonradiative thermalization, (ii) interband nonradiative bulk recombination of photogenerated carriers (PGC), (iii) interband nonradiative surface recombination of PGC, and (iv) instantaneous Joule thermalization of PGC in the applied electric field. The theoretical results are in good agreement with those of experiment. Both show that the contribution of the Joule thermalization is a major factor and the photoacoustic signal will be strengthened as the dc electric field increases beyond an appropriate value. Therefore, the signal-to-noise ratio and the contrast of photoacoustic imaging of the semiconductor devices can be improved by the dc external electric field.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 7007-7013 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The investigation is further extended to the modulated photothermal deflection (PTD). The three-dimensional Navier–Stokes equation is solved analytically for a layered-structure sample, and then numerical calculations are given. The influences of the optical, thermal, and electronic parameters on the PTD signal are discussed in detail. It is shown that the thermal lens and electronic-strain effects make significant contributions to the PTD signal, but the thermoelastic effect is dominant. The potential applications of the PTD technique to microscopic imaging are discussed.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 6999-7006 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A thorough theoretical study of the modulated optical reflectance (MOR) response of semiconductor samples has been presented. The three-dimensional plasma and thermal equations are solved analytically, and then numerical calculations are given for the high-frequency MOR signal. The influences of the optical, thermal, and electronic parameters on the MOR signal are discussed in detail. The generation mechanisms of the MOR signal will be clarified. On the other hand, the mathematical analyses also provide a quantitative tool by which one can fit the theoretical curves to experimental data to determine several material parameters, such as the surface recombination velocity, the lifetime of photogenerated carriers, and thermal conductivity of the materials.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 716-722 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A theoretical investigation of the dynamic thermoelastic response of pulsed photothermal deformation (PTD) deflection detections for some Q-switch laser pulses and finite thickness samples has been presented. The results show that signals can be characterized by a quasistatic process when the laser pulse rise time is on the order of 1 μs and the sample thickness is in submillimeter range (typically for semiconductor wafers). However, as the pulse rise time decreases or the sample thickness increases, the dynamic wave behavior gradually becomes apparent, and the quasistatic approximation gives only a contour curve of the dynamic time evolution. When the rise time decreases on the order of 10 ns or less for the same kind of the samples, the PTD deflection signal reflects a totally dynamic wave behavior.
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3402-3404 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Tetragonal Ba0.8Sr0.2TiO3 thin films with large columnar grains 100–200 nm in diameter have been prepared on Pt/Ti/SiO2/Si substrates using a 0.05 M solution precursor by sol–gel processing. The ferroelectric phase transition in the prepared Ba0.8Sr0.2TiO3 thin films is broadened, and suppressed to 40 °C with a maximum dielectric constant of εr (100 kHz)=680. The observed low dissipation factor tan δ=2.6% and high pyroelectric coefficient p=4.586×10−4 C/m2 K at 33 °C render the prepared Ba0.8Sr0.2TiO3 thin films promising for uncooled infrared detector and thermal imaging applications. © 1999 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2132-2134 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Barium strontium titanate films with good ferroelectricity have been obtained by a developed sol-gel processing, using a highly dilute spin-on solution. X-ray diffraction and scanning electron microscopy investigations show that large grains with the size of 100–200 nm in the films are formed from highly dilute spin-on solutions with layer-by-layer homoepitaxy. Polarization-electric field and dielectric constant-temperature (εr−T) measurements reveal that the ferroelectricity becomes more evident as the grain size increases. The measurements for quality Ba0.8Sr0.2TiO3 ferroelectric films derived from a 0.05 M solution have shown a remnant polarization of 3.5 μC/cm2, a coercive field of 86 kV/cm, and two distinctive phase transitions. © 1999 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1035-1037 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The pyroelectric coefficient and pyroelectric infrared response in the sol–gel derived Ba0.8Sr0.2TiO3 thin films have been studied for possible infrared detector applications. The measured pyroelectric coefficient is larger than 3.1×10−4 C/m2 K at temperatures ranging from 10 to 26 °C and reaches the maximum value of 4.1×10−4 C/m2 K at 16 °C. The infrared detectivity of 4.6×106 cm Hz1/2 W−1 has been obtained at 19 °C and 10 Hz in the Ba0.8Sr0.2TiO3 films deposited on thick (500 μm) platinum coated silicon substrates. The better infrared response can be expected by the improvement in the thermal isolation of pyroelectric element and the electrode materials. © 2000 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 5718-5725 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper presents a thorough theoretical study of pulsed photothermal phenomena in semiconductors. The explicit expressions of the temporal distributions of plasma wave, thermal wave, and displacement field within a finite semiconductor sample, excited by an incidence of the pulsed laser, are derived analytically. We simulate numerically the time evolutions of the pulsed photothermal optical reflectance, the pulsed photothermal optical beam deflection (i.e., Mirage effect), and the pulsed photothermal displacement signals for different characterized parameters of semiconductor samples. The theoretical works are significant to provide a quantitative time- and space-resolved study of dynamic deexcitation processes and characterization of parameters of semiconductor samples under normal experimental conditions by the pulsed photothermal techniques.
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  • 10
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
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