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  • 1
    Electronic Resource
    Electronic Resource
    Heats of mixing aqueous electrolytes. XII. Reciprocal salt pair Na+, Li+.dvr.Cl-, SO42- (1975)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 79 (1975), S. 1532-1535 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100582a010
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  • 2
    Electronic Resource
    Electronic Resource
    Photoluminescence of the Se and Si DX centers in (AlxGa1−x)0.5In0.5P (x〈0.5) grown by metalorganic vapor phase epitaxy (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 1350-1354 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The near-infrared photoluminescence (PL) of Se and Si DX centers in (AlxGa1−x)0.5In0.5P grown by metalorganic vapor phase epitaxy has been demonstrated. Two luminescence peaks with energies of 1.16 and 0.96 eV were observed. The peak positions in PL spectrum were not shifted with various Al compositions (x) in (AlxGa1−x)0.5In0.5P (x〈0.5). This phenomenon is similar to that found for the thermal activation energy of Se related traps (Ec−Et=0.28 eV determined by deep level transient spectroscopy measurements) and Si related traps (Ec−Et=0.4 eV) which also do not change with different Al compositions in AlGaInP. The intensity of these peaks increased with increasing net carrier concentration. In addition, the luminescence energies of these peaks are almost identical with those observed in AlxGa1−xAs (x from 0.07 to 0.4) doped with Se and Si. This observation contradicts the large lattice relaxation model, which predicts that the energy of these two luminescence peaks should change with various host materials due to different energy band structures. On the other hand, interpreted by the small lattice relaxation model, the 1.16 and 0.96 eV luminescence bands can be attributed to an internal transition between the excited DX state and its ground state of Se and Si DX centers, respectively. The luminescence energy is dependent on impurities themselves rather than the host materials, such as AlGaAs or AlGaInP. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365909
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  • 3
    Electronic Resource
    Electronic Resource
    Deep-level-free AlxGa1−xAs (x=0.22) layer grown by metalorganic chemical vapor deposition (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2745-2747 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have achieved deep-level-free Al0.22Ga0.78As epitaxial layers using low selenium (Se) doping (8.4×1016 cm−3) grown by metalorganic chemical vapor deposition (MOCVD). Deep levels in various Al0.22Ga0.78As layers grown on GaAs substrates were measured by deep-level transient spectroscopy. We have found that the commonly observed oxygen contamination-related deep levels at EC−0.53 and 0.70 eV and germanium-related level at EC−0.30 eV in MOCVD-grown Al0.22Ga0.78As can be eliminated by Se doping. In addition, a deep hole level located at EV+0.65 eV was found in highly Se-doped Al0.22Ga0.78As epilayers. We suggest that low Se doping (〈2×1017 cm−3) produces a passivation effect and then deactivates other deep levels in Al0.22Ga0.78As. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113695
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  • 4
    Electronic Resource
    Electronic Resource
    Production of Growth-Substance by Clover Nodule Bacteria (1938)
    [s.l.] : Nature Publishing Group
    Nature 142 (1938), S. 753-754 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] THIMANN1, using the standard Avena technique, showed that a growth-substance is produced in considerable amount in root nodules. He further-more claimed that the growth-substance produced is not derived from the meristematic tip of the nodule, but comes directly from the ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/142753b0
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  • 5
    Electronic Resource
    Electronic Resource
    A Thermolabile Accessory Growth-factor to Rhizobium (1944)
    [s.l.] : Nature Publishing Group
    Nature 153 (1944), S. 21-21 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] IN addition to the thermostable accessory growth-factor (Allison and Hoover's coenzyme R), we have found a thermolabile accessory growth-factor to the root-nodule bacteria. The medium was prepared by grinding 20 gm. of air-dried vetch powder (stem and leaves of Vicia sinkiangansis) with ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/153021a0
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  • 6
    Electronic Resource
    Electronic Resource
    Variations of physical properties in pellets containing alumina/carbon powder mixtures during reduction and nitridation (1996)
    Springer
    Journal of materials science 31 (1996), S. 3549-3557 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Surface area and porosity of pellets containing alumina/carbon powder mixtures during reduction and nitridation were determined. The experimental results indicated that surface area and porosity of solid samples were decreased by increasing the reaction temperature, grain size, forming pressure and the amount of catalyst. Increasing the molar ratio of C/Al2O3 and gas flow rate could decrease the surface area and increase the porosity of the solid sample.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00360761
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  • 7
    Electronic Resource
    Electronic Resource
    A mathematical model for carbothermic nitridation of carbon/metal oxide pellet—effect of pressure gradient (1999)
    Springer
    Journal of materials science 34 (1999), S. 763-767 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract A mathematical model has been proposed for describing the carbothermic nitridation of carbon/metal oxide pellet in a stream of nitrogen. Based on the model, dimensionless governing equations were derived to represent the non-isobaric system. Effects of the following five parameters on the conversion of solid C and yield of solid E have been found to be similar to that of an isobaric system: the reaction/diffusion ratio σ2, the reactivity ratios β1 and β2, the reactant amount ratio γ and the Sherwood number NSh. The reaction rate was found to be high when the value of a dimensionless viscous constant B* was large. The reaction rate for the non-isobaric system was generally found to be lower than that for the isobaric system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1004568829288
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  • 8
    Electronic Resource
    Electronic Resource
    Somatic embryogenesis and shoot organogenesis from interspecific hybrid embryos of Vigna glabrescens and V. radiata (1990)
    Springer
    Plant cell reports 9 (1990), S. 77-79 
    Details
    ISSN: 1432-203X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract Somatic embryogenesis occurred on cotyledons of morphologically abnormal embryos derived from Vigna glabrescens x V. radiata crosses and cultured on Murashige and Skoog (MS) medium without growth regulators. The frequency of 15–17 day old embryos that gave rise to somatic embryos increased from 8% to 29% by application a mixture of 100 mg/l gibberelllc acid, 25 mg/l α-naphthaleneacetic acid (NAA) and 5 mg/l kinetin daily to the pedicels of the developing pods. However, only callus formed on immature hybrid embryos of the reciprocal cross. These callus tissues occasionally gave rise to shoots via organogenesis when transferred to MS medium with 2 mg/l N6-benzyladenine and 0.05 mg/l NAA. Treatment of pods with growth regulators did not influence the frequency of organogenic callus. Selfed embryos of the parents did not form somatic embryos in culture, nor did callus derived from the selfed embryos produce shoots. Thus, the ability to redifferentiate appears to be associated with interspecific hybridity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00231553
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  • 9
    Electronic Resource
    Electronic Resource
    Interspecific hybridization between Vigna radiata (L.) Wilczek and V. glabrescens (1989)
    Springer
    Theoretical and applied genetics 78 (1989), S. 641-647 
    Details
    ISSN: 1432-2242
    Keywords: Interspecific gene transfer ; Embryo culture ; Vigna radiata ; Vigna glabrescens ; Mungbean
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Summary Interspecific hybrids of the mungbean, Vigna radiata (L.) Wilczek (2n=22) and V. glabrescens (2n=44) were generated with the aid of embryo culture. V. glabrescens x V. radiata hybrids were recovered via germination of the immature embryos. Reciprocal hybrids were obtained via shoot formation from embryonic callus. The authenticity of the hybrids was determined by morphological characteristics, chromosome number, and isozyme patterns. The hybrids were highly sterile upon selfing, but backcrossing to the diploid parent yielded viable seeds. Some of the plants resembled the diploid parent morphologically while others resembled neither parent. The backcross plants were sufficiently fertile to give a large number of mature, selfed seeds. Plants obtained differed morphologically and in their isozyme patterns from either parent, indicating introgression. These progeny populations will be used as bridging materials to transfer pest resistance from the wild tetraploid to the cultivated mungbean.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00262558
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  • 10
    Electronic Resource
    Electronic Resource
    Adaptation and environmental sensitivity of mungbean genotypes evaluated in the international mungbean nursery (1989)
    Springer
    Euphytica 41 (1989), S. 253-261 
    Details
    ISSN: 1573-5060
    Keywords: Vigna radiata ; mungbean ; stability ; genotype-environment interaction ; wide adaptability ; AVRDC ; segmented regression
    Source: Springer Online Journal Archives 1860-2000
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Summary Yield data from the 5th–12th international mungbean nursery (IMN) trials conducted at 23 sites in 15 countries were analyzed by conventional stability analysis—regression of genotype mean on the environmental index, and by segmented regression analysis—fitting separate linear regressions in low yielding and high yielding environments. The gene pool base concept allows comparison of genotypes from different IMN trials grown in different years and sites. A very high positive linear relationship was observed between the regression coefficient and the average yield of cultivars, indicating that high yielding cultivars were less stable across environments. When data points of the regression of genotype mean and site mean for VC 1973A, a high yielding and widely adapted cultivar, were examined, the relationship appeared not to be linear. The segmented regression analysis improved the coefficient of determination (r2) and the genotypes were grouped based on regression coefficients in high yielding and low yielding environments. Different categories of genotypes suitable for high input environments, widely adaptable genotypes, and highly stable genotypes were identified.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00021592
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