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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3841-3842 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: For light-emitting porous Si there has been a severe problem with instability and degradation in the light emission. We performed in situ photoluminescence measurements to monitor the degradation process under ambient atmosphere of different gases and in ultrahigh-vacuum environment. We found that laser induced oxygen adsorption is the major cause for the light emission degradation, while the laser heating effect can be excluded. We also found the degraded intensity can be partially recovered by reducing the surface oxygen concentration.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 943-948 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An infrared photodetector that contains a superlattice structure and a blocking barrier was investigated. The photodetector shows advantages including a low operating voltage (〈0.7 V), wide detection bandwidth, flexible miniband engineering, and in particular, voltage-tunable spectral responsivity. The blocking barrier not only prohibits the dark current but also acts as a high-pass energy filter to tune the spectral responsivity. The zero background peak detectivity of our detector is 3.7×109 cm Hz0.5/W (9.7 μm) at −0.5 V and 2.2×1010 cm Hz0.5/W (6.7 μm) at −0.1 V. Since the spectral responsivity at different biases is independent, temperature sensing is feasible by taking the ratio of the measured photocurrent at different biases. A demonstration of temperature sensing by using our superlattice infrared photodetector with a blocking barrier is also shown in this article. Those results show the superlattice is a simple and efficient structure for the design of a multicolor infrared photodetector. © 2002 American Institute of Physics.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 3098-3106 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Chemical reactions in Ti–Si and Nb–Si powder mixtures were initiated in regions of high plastic strain induced by high-strain-rate deformation. These regions of high localized plastic strain had thicknesses of 10–25 μm and a characteristic spacing of 600–1000 μm. Scaling up of the experiments revealed a shear-band spacing that is constant and dictated by material and deformation parameters. The generation of heat due to plastic deformation and chemical reaction is treated in a one-dimensional calculation. The calculations are in qualitative agreement with experimental results: shear bands can serve as ignition regions for the propagation of the reaction throughout the entire specimen for Ti–Si, whereas in the Nb–Si system (that has a much lower enthalpy of reaction), the reaction is always localized in the shear bands. These results enable the estimation of a reaction time in the Ti–Si mixture (∼10 ms) and of a critical global strain required for the complete reaction to take place (εeff=0.38). This is a new regime of reaction, intermediate between combustion synthesis and shock compression synthesis. © 1998 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Biochemistry 27 (1988), S. 5819-5823 
    ISSN: 1520-4995
    Source: ACS Legacy Archives
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Synchrotron-radiation topographic observations have shown that the Cu-doped (Ba0.25Sr0.75)0.9(K0.5Na0.5)0.2Nb2O6 crystal has a strong ferroelectric x-ray anomalous-scattering effect at the wavelength near the absorption edge of Ba atoms. The reversal of anomalous contrast of antiparallel domains in the crystal was directly revealed in the topographs of hkl and hkl¯ reflections. It was found that the domain walls are all polar and are formed to compensate the charges resulting from the inhomogeneous distributions of the metal atoms in the bulk crystal. © 1995 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 3069-3071 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is demonstrated that controlled high-strain-rate plastic deformation of heterogeneous reactive porous materials (Nb+Si, Mo+Si+MoSi2) produces shear localization. Within the shear bands, having thicknesses 5–20 μm, the overall strains (γ≤100) and strain rates (γ(overdot)≤107 s−1) result in changes in particle morphology, melting, and regions of partial reaction. The shear band thickness is smaller than the initial characteristic particle size of the porous mixture (≤44 μm). This ensures quenching of the deformed material structure in the same time scale as the deformation time (10−5 s). In the shear localization region, two types of patterning are observed: (a) a characteristic shear fracture which subdivides the Nb particles into thin parallel layers and (b) the formation of vortices. © 1994 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1098-1100 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have successfully synthesized heterojunctions and elementary multilayered structures of the semimetal-semiconductor system Sb/GaSb using molecular beam and migration enhanced epitaxies. The study is motivated in part by the potential for producing an indirect narrow-gap semiconductor, in which a confinement-induced positive energy gap in the Sb layers will lead to highly attractive properties for nonlinear optical switches operating in the infrared. One may also be able to exploit the long mean free path in Sb (up to 2 μm) in studying quantum transport phenomena. X-ray diffraction confirms the ordered growth of GaSb/Sb/GaSb multilayers, and field-dependent magnetotransport measurements yield electron and hole mobilities ≥3×104 cm2/V s in Sb thin films.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 986-988 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Porous Si has been prepared by the electrochemical anodization method. At room temperature it has a light-emission peak energy in the range of 1.50–2.06 eV. The results from variable-temperature photoluminescence (PL) show anomalous temperature dependencies of the spectral characteristics: the emission intensity increases with decreasing temperature until reaching an intensity maximum at about 100–200 K, then it decreases at lower temperatures; the emission energy shift with temperature has no fixed trend and varies with sampling point. Such dependencies are reversible with the two directions of temperature change. The above observations can be explained by phonon participation in the light-emission process of porous Si.
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 2251-2253 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A multicolor infrared photodetector was realized with two superlattices separated by a blocking barrier. The photoresponse is switchable between 7.5–12 and 6–8.5 μm by the bias polarity, and is also tunable by the bias magnitude in each wavelength regime. In addition, our detector exhibits advantages including little temperature dependence of the spectral response and the same order of responsivity in the two wavelength regimes. The measured peak responsivities in the two regimes are 117 mA/W at 9.8 μm under 1 V and 129 mA/V at 7.4 μm under −0.8 V, respectively. Also, the detectivities are comparable with the conventional multistack detector. The zero background peak detectivities are 2.3×1010 cm Hz0.5/W at 50 K and 9.8 μm under 0.7 V, and 8.7×1010 cm Hz0.5/W at 70 K and 7.4 μm under −0.7 V. © 2002 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of agricultural and food chemistry 40 (1992), S. 961-966 
    ISSN: 1520-5118
    Source: ACS Legacy Archives
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
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