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  • 1
    Electronic Resource
    Electronic Resource
    Correlations of bending mode force constants among polyatomic molecules (1983)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 87 (1983), S. 1694-1696 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100233a011
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  • 2
    Electronic Resource
    Electronic Resource
    (100) metal alloy films containing body-centered cubic and face-centered cubic metals: Relation between structures and lattice spacings (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4463-4465 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: (100) oriented metal alloy films containing both body-centered cubic (bcc) and face-centered cubic (fcc) metals have been deposited on (100) Si using Pd/Cu seed layers. These include FeCo, FePt, FePd, FeCu, FeAu, FeAg, FeNi, VNi, and CrNi with different compositions. All the alloys show (200) spacings close to those of either the bcc or fcc component metals. To compare with Vegard's rule, a correction factor of (1.5)1/2 is needed between the fcc and bcc lattices, with the fcc spacing being 22% larger. Twenty alloy spacings are compared, assuming that both the lattice structures and spacings of the alloy films are mainly determined by the component metals whose spacings are close to those of the alloys. Good agreements with the Vegard's rule are obtained for the thirteen (100) alloys with lattice spacings close to those of their respective bcc component metals, and for the seven (100) alloy films with lattice spacings close to their fcc component metals.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352188
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  • 3
    Electronic Resource
    Electronic Resource
    Structure, magnetization, and thermal stability of (100) FeCu films deposited on Pd/Cu/Si(100) (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4443-4450 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: (100)-oriented FeCu films, containing 80 and 50 at. % Fe, have been deposited on (100) Si using (100) Pd/Cu seed layers. Heating of the samples helps identify the structures of the FeCu films, especially the one with 50 at. % Fe. The FeCu(50/50) film shows a structure with possibly two phases: one with a lattice spacing close to that of (100) Fe, and one to that of (100) Cu, henceforth assigned to the Fe- and Cu-stabilized FeCu phases, respectively. The FeCu(80/20) film shows only one phase, with a lattice spacing close to that of (100) Fe. Ferromagnetic characteristics are detected up to an anneal of 30 min at 600 °C for the FeCu(80/20) films, with a reduced saturation magnetization above 400 °C. For the FeCu(50/50) films, their ferromagnetic characteristics remain little changed up to 300 °C, with reduced saturation magnetization at 400 °C, and disappear completely after an anneal at 500 °C. The results are compared with those containing elemental Fe layers deposited on different metal seeds, and the reaction mechanisms of the present structures are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350786
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  • 4
    Electronic Resource
    Electronic Resource
    Reversed magnetic anisotropy in deformed (100) Cu/Ni/Cu structures (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 4873-4875 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using (100) Cu(1000 A(ring)) /Ni/Cu(1000 A(ring)) structures with a different Ni thickness, a complete reversal in magnetic anisotropy is observed between the structures with 1000 and 50 A(ring) Ni, respectively. The structures were deposited on (100) Si, with the first Cu layer in the (100) orientation as the seed, followed by epitaxial Ni and another Cu layer. Comparing the magnetization for the field applied parallel to the film plane, M(parallel), with that perpendicular to it, M⊥, M⊥ is found to increase and M(parallel), to decrease with decreasing Ni thickness. At a Ni thickness of 50 A(ring), a squared hysteresis loop is observed for M⊥. The M(parallel) curve, on the other hand, changes from a normal one at 1000 A(ring) Ni to one with little hysteresis at 50 A(ring) Ni. These are accompanied by an increasing deformation of the (100)Ni cubic lattice into a tetragonal one with decreasing Ni thickness, due to its mismatch with Cu. The deformation is discussed to assess the roles of stress in the observed reversal in magnetic anisotropy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346127
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  • 5
    Electronic Resource
    Electronic Resource
    Thermal stability of the (100) Cu-Ni superlattices with reversed magnetic anisotropy (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 825-828 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The (100) Cu(100 A(ring))-Ni(25 A(ring)) superlattice structure, grown on Cu/Si(100), that shows a reversed magnetic anisotropy between the in-plane and normal-to-plane magnetizations, has been heated to 400 °C, and the magnetic and structural changes investigated. The periodic structure remains mostly intact up to a 30-min heating at 300 °C, and partially so after heating at 400 °C. The reversed anisotropy, with a hysteresis loop seen for the field perpendicular to the film plane, but not for that parallel to the film plane, remains seen up to 400 °C. This is compared with two (100) Cu/Ni/Cu structures containing 50- and 500-A(ring) Ni, respectively, with two 1000-A(ring) Cu layers each. The former structure, with a completely reversed magnetic anisotropy, lost both the Ni layer and the magnetic characteristics after heating at 200 °C. The latter structure retained its magnetic properties up to 300 °C, and lost both the Ni layer and the magnetic characteristics after heating at 400 °C. The different reactions involved are discussed, including that with Si and mixing between Cu and Ni.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351301
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  • 6
    Electronic Resource
    Electronic Resource
    Reversed magnetic anisotropy of (100) Pd/Ni/Cu structures (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 3958-3960 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: (100) Ni films with an asymmetrical stress have been made by depositing Pd/Ni/Cu structures on Si. A completely reversed magnetic anisotropy is observed for the Ni layers of 50 A(ring) and thinner in such structures, with the normal-to-plane magnetization being easier than the in-plane one. The results are compared with those of (100) Ni layers in symmetrical structures, where similarly reversed magnetic anisotropy is also observed, to assess the role of stress on such magnetic properties of (100) Ni.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349182
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  • 7
    Electronic Resource
    Electronic Resource
    Growth of (100) Al/Fe and Fe/Al/Fe layers using the technique of metal-metal epitaxy on silicon (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5893-5895 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: (100)-oriented Al films, 1000 A(ring) thick, have been grown on a (100) Fe layer near room temperature with the technique of metal-metal epitaxy on silicon. The technique uses a (100) Cu layer deposited epitaxially on (100) Si as the seed, followed by sequential epitaxy of Pd and Fe, before the deposition of Al. Further deposition of Fe on the grown (100) Al film retains the (100) epitaxial relation, resulting in a (100)-oriented Fe/Al/Fe/Pd/Cu/Si structure. The mutual epitaxy of Al and Fe in the (100) orientation thus enables the growth of (100)-oriented Al-Fe periodic structures using such a technique. Attempts at growing (100) Al films directly on several other seed layers, including Cu, Pd, and Au, have all failed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346937
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  • 8
    Electronic Resource
    Electronic Resource
    Reactions and orientation effects of the Fe/Pd/Cu/Si, Fe/Ag/Pd/Cu/Si, Fe/Au/Pd/Cu/Si, and Fe/Pt/Pd/Cu/Si structures using (100) and (111) Si (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1879-1887 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: (100)- and (110)-oriented Fe films, grown on Pd/Cu/Si, Ag/Pd/Cu/Si, Au/Pd/Cu/Si, and Pt/Pd/Cu/Si using (100) and (111) Si, respectively, have been heated to 600 °C, and the reactions studied. The (100) Fe films remain little changed both structurally and magnetically, after an anneal of 30 min between 300 and 400 °C in an ambient of N2-H2 (9:1). The saturation magnetization shows little change at 400 °C, while the coercivity increases at this temperature. Above 400 °C, the Fe films degrade depending on the structures grown. For the Fe/Pd/Cu/Si and Fe/Pt/Pd/Cu/Si structures, both the magnetic and structural characteristics of Fe remain partially intact at 600 °C. In both cases, the Pt and Pd layers have been consumed for the silicide formation above 400 °C. For the Fe/Ag/Pd/Cu/Si structure, Fe rapidly degrades at 500 °C, with Ag being little changed till 600 °C. For the Fe/Au/Pd/Cu/Si structure, the formation of the bulk Au-Si eutectic melt at 363 °C completely destroys the Fe layer above 400 °C. In comparison, a lower thermal stability is observed for the (110) Fe layers grown on (111) metal seeds using (111) Si, with reduced saturation magnetizations at 400 °C. A larger diffusion of Pd, Ag, Au, and Pt into the (110) Fe layers is also observed than those deposited on (100) Si. The mechanisms involved are discussed and are related to the different thermal stabilities observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351661
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  • 9
    Electronic Resource
    Electronic Resource
    Observation of anomalous resistive transition around 160–200 K in Y5Ba6Cu11Ox thin films (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7348-7350 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A large resistive transition between 160–200 K has been observed in Y5Ba6Cu11Ox thin films. The films were deposited on MgO substrates by electron-beam evaporation and annealed through rapid thermal annealing. With 960–980 °C, 30–60 s RTA, the films showed a resistance drop about one order of magnitude around 160–200 K. This resistive transition was measured reproducibly over many samples. The preparations and measurements of the Y5Ba6Cu11Ox films were similar to those of the YBa2Cu3O7−x films. The x-ray diffraction pattern indicated that the films mainly contain the YBa2Cu3O7−x phase. The films were polycrystalline with grain sizes of a few μm and an average thickness of 0.4 μm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347592
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  • 10
    Electronic Resource
    Electronic Resource
    Epitaxy of (100) Cu on (100) Si by evaporation near room temperatures: In-plane epitaxial relation and channeling analysis (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2239-2240 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The epitaxial growth of (100) Cu on (100) Si reported recently using evaporation is analyzed to determine the epitaxial relation between Cu and Si, and also the crystalline quality of the Cu films. A 45° rotation between the (100) plane of Cu and that of Si around their (001) axis is shown to be needed for the lattice match. Such an epitaxial relation is confirmed by the grazing angle x-ray diffraction, with the [010] of Cu parallel to the [011] of Si. The channeling analysis of a 2-μm-thick Cu film shows a 10% minimum near the surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103902
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