ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
A typical dual-beam platform combines a focussed ion beam (FIB) microscope with a fieldemission gun scanning electron microscope (FEGSEM). Using this platform, it is possible tosequentially mill off 〉 ~ 50 nm slices of a material by FIB and characterise, at high resolution, thecrystallographic features of each new surface by electron backscatter diffraction (EBSD). Thesuccessive images can be combined to generate 3-D crystallographic maps of the microstructure.This paper describes various aspects of 3-D FIB tomography in the context of understanding themicrostructural evolution of metals during deformation and annealing. The first part of the paperdescribes the influence of both metal type and milling parameters on the quality of EBSD patternsgenerated from a surface prepared by FIB milling. Single crystals of some face centred cubic metalswere examined under varying FIB milling parameters to optimise EBSD pattern quality. It was foundthat pattern quality improves with increasing atomic number with the FIB milling parameters neededto be adjusted accordingly. The second part of the paper describes a useful technique for FIB millingfor the reliable reconstruction of 3-D microstructures using EBSD. There is an initial procedureinvolving extensive milling to generate a protruding rectangular-shaped volume at the free surface.Serial sectioning is subsequently carried out on this volume. The technique was used to investigatethe recrystallization behaviour of a particle-containing nickel sample, which revealed a number offeatures of the recrystallizing grains that are not clearly evident in 2-D EBSD micrographs
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/16/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.550.55.pdf
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