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  • 1
    Electronic Resource
    Electronic Resource
    Whistler turbulence at the magnetopause: A nonlinear generation mechanism (2001)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 8 (2001), S. 272-276 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The plasma maser effect in the existence of enhanced kinetic Alfvén wave turbulence is investigated as the generation mechanism of the whistler turbulence at the magnetopause. The numerical results of the growth rate show that on the scale of neither the ion inertial length nor the electron inertial length, the whistler waves can be excited, and the peak of the maximum growth rate occurs on the scale of the effective ion Larmor radius. The kinetic Alfvén wave dynamics associated with the scale length of the effective ion Larmor radius is intrinsically important in the magnetic reconnection and leads to the generation of whistler turbulence. The theoretical model of the generation of whistler turbulence is useful for explaining the observations of intense electromagnetic fluctuations at the magnetopause. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1326063
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  • 2
    Electronic Resource
    Electronic Resource
    An investigation into the mechanism of pseudospark producing metal ion beams : The 8th international conference on ion sources (2000)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 675-677 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A multiplate pseudospark chamber, whose electrodes were fabricated with different metal materials, was designed and tested as a metal ion source. The ion beam implantation combined with Rutherford backscattering (RBS) measurement was used to understand whether these ion beams come from the anode plasma or the cathode plasma. The RBS measurements have demonstrated the following results: (1) pseudospark produced metal ion beams mainly consist of ions from the cathode materials; (2) the ion beam current increases rapidly with the pseudospark discharge voltage first and then saturates; and (3) the energy of the extracted metal ions is much less than the voltage between the anode and the cathode, therefore the high discharge voltage does not correspond to the high ion energy. A possible mechanism of pseudospark producing metal ion beams is discussed. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1150257
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  • 3
    Electronic Resource
    Electronic Resource
    Electrical properties of n-n ZnSe/In0.04Ga0.96As(001) heterojunctions (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2033-2035 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lattice-matched n-n ZnSe/In0.04Ga0.96As heterojunctions were studied by means of current density versus voltage (J–V) and capacitance versus voltage (C–V) measurements. The resulting characteristics indicate that the behavior of this n-n heterostructure can be explained by a back-to-back double Schottky diode model. The value of conduction band discontinuity (ΔEc) is found to be 0.10–0.12 eV. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122560
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  • 4
    Electronic Resource
    Electronic Resource
    Characterization of the inverted Ga0.52In0.48P/GaAs (001) junctions using current–voltage and capacitance–voltage measurements (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 720-722 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Al/u:GaAs/n:Ga0.52In0.48P inverted-structure (GaAs on top) Schottky diodes on n+ GaAs (001) substrates have been grown by gas source molecular beam epitaxy with several GaAs thicknesses from 10 to 100 nm. The barrier height determined by the capacitance versus voltage method is substantially higher than the barrier height determined by the current versus voltage method. These results suggest that there is a negative interface charge 6–8×1011/cm−2 at the GaAs/Ga0.52In0.48P interface, which is opposite in sign to the interface charge at the normal structure of the Ga0.52In0.48P/GaAs heterojunction reported previously. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123102
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  • 5
    Electronic Resource
    Electronic Resource
    Coherent nanoscale islands on La0.5Ca0.5MnO3 thin films and the enhancement of magnetoresistance (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 827-829 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A low cost reproducible fabrication process has been developed to prepare La0.5Ca0.5MnO3 (LCMO) films with well distributed uniform nanoscale dots using pulsed-laser deposition. It was found that the growth of the dots was closely related to the strain in the film during the growth process. The diameter and density of dots could be controlled within the range of 30–120 nm and 2×108–2×109/cm2, respectively. The magnetoresistance effect of such LCMO films is also enhanced, which may be caused by the spin-dependent scattering of carriers due to the existence of the dots. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1384003
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  • 6
    Electronic Resource
    Electronic Resource
    Importance of intermolecular interactions in the nonlinear optical properties of poled polymers (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1368-1370 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A series of phenylbithiophene stilbenes and phenyltetraenes were synthesized and their first-order molecular hyperpolarizabilities determined. Optical nonlinearities up to μβo=9300×10−69 C m5/V were measured at 1907 nm. We show that intermolecular interactions have a large influence on the optical nonlinearity of the molecules in solution and in guest-host polymers with polymethylmethacrylate and polyquinoline as the host. We propose the use of a bulky donor group and a side chain perpendicular to the molecule's conjugate bridge to reduce aggregation. Electro-optic coefficients as high as r33=30 pm/V at 1.55 μm in polymethylmethacrylate with 25 wt % chromophore loading were measured. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126034
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  • 7
    Electronic Resource
    Electronic Resource
    Uniaxial-stress dependence of Hall effect in an AlGaAs/GaAs modulation-doped heterojunction (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 4586-4588 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Uniaxial compressive stress was applied to an AlGaAs/GaAs heterojunction. The uniaxial stress coefficients of sheet resistivity, sheet electron concentration, and mobility were obtained. The hydrostatic pressure coefficient of sheet resistivity was also obtained and was used to explain the different magnitude of the uniaxial stress coefficients of sheet electron concentration in the [110] and [11¯0] directions. We obtain a value for the piezoelectric constant e14 of AlAs to be −0.26 C/m2, compared to the value −0.225 C/m2 calculated by K. Hübner [Phys. Status Solidi B 57, 627 (1973)]. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1427753
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  • 8
    Electronic Resource
    Electronic Resource
    Computer correction for distorted STM images (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 5649-5652 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: In quite a few cases, the geometric distortion of a scanning tunneling microscope (STM) image is essentially caused by the nonorthogonal scanning. A physical and mathematical model is proposed to correct such distortion, giving a satisfactory result.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1143395
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  • 9
    Electronic Resource
    Electronic Resource
    A model for evaluating the effect of fatigue crack repair by the infiltration method (2000)
    Oxford, UK : Blackwell Science Ltd
    Fatigue & fracture of engineering materials & structures 23 (2000), S. 0 
    Details
    ISSN: 1460-2695
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Infiltration of foreign materials into a fatigue crack has previously been shown to be able to retard the crack and extend fatigue life. Most of the related studies were empirical and phenomenological in nature. To aid engineering decisions, it would be advantageous if the possible outcome of a repair can be evaluated beforehand. To this end, a crack closure model taking into account the additional closure effect of the infiltrant has been developed and verified against experimental results. With this model, the sensitivity of the repair effect to various parameters such as mechanical properties of the infiltrant, depth of penetration and infiltration load level can be assessed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1460-2695.2000.00347.x
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  • 10
    Electronic Resource
    Electronic Resource
    Postnatal isl1 + cardioblasts enter fully differentiated cardiomyocyte lineages (2007)
    [s.l.] : Nature Publishing Group
    Nature 446 (2007), S. 934-934 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Nature 433, 647–653 (2005) It has been drawn to Nature’s attention that K.R.C., S.E., C.-L.C., A.M. and K.-L.L. filed a patent application relevant to this work (patent number WO 2004/070013) in 2004, which should therefore have ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/nature05790
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