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  • 1
    Electronic Resource
    Electronic Resource
    Infrared and Raman spectra of benzil single crystals (1989)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 93 (1989), S. 6290-6296 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100354a007
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  • 2
    Electronic Resource
    Electronic Resource
    The majority carrier mobility of n-type and p-type Hg0.78Cd0.22Te liquid phase epitaxial films at 77 K (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2916-2920 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dependence of majority carrier mobility on carrier concentration at 77 K in Hg0.78Cd0.22Te has been studied by Hall measurements on about 190 n-type and 360 p-type liquid phase epitaxial films. The n-type films were indium doped with the carrier concentration varying from 1×1014 to 2×1016 cm−3. The measured electron mobility changed from 2×105 to 8×104 cm2/V s. The p-type films were undoped (Hg vacancy) with the carrier concentration varying from 2×1015 to 3×1017 cm−3. The measured hole mobility changed from 600 to 200 cm2/V s. By comparing calculated mobility curves with the experimental data, we found that the major scattering mechanisms for electron mobility in n-type materials were polar optical phonon, ionized impurity, and alloy disorder scatterings. These three scattering mechanisms also dominate the hole mobility in p-type materials at 77 K. It was also found that a model with Hg vacancy as doubly ionized shallow acceptors fitted very well the hole mobility versus carrier concentration data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353022
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  • 3
    Electronic Resource
    Electronic Resource
    Dynamical effects of biaxial strain in thin Cu/Ni(111) superlattices (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2079-2085 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In the framework of a central force-constant model and a surface Green function matching technique we calculate the dynamical effects of biaxial strain in a short period Cu/Ni(111) superlattice. We show that sizeable changes in the spectral features are predicted, so that a spectroscopic characterization of these systems is stimulated. An important reason to investigate the vibrational features of such a system is that it has been studied in detail as a prototype of fcc-modulated alloys, i.e., artificially grown structures, which edisplay a huge stiffening of the bulk modulus.〈l 〉
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349443
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  • 4
    Electronic Resource
    Electronic Resource
    Minority-carrier lifetime in indium-doped n-type Hg0.78Cd0.22Te liquid-phase-epitaxial films (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4761-4766 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The recombination mechanisms of the minority-carrier lifetime in n-type indium-doped Hg0.78Cd0.22Te liquid-phase-epitaxial films have been studied. Its temperature dependence was measured from 78 to 200 K using standard photoconductivity decay method. The dependence on doping concentration from 1×1014 to 2×1015 cm−3 was measured using a contactless microwave reflection method at 77 K. From best fits to the experimental temperature dependence data, it was found that lifetimes at temperatures higher than 130 K were dominated by Auger recombination with a value of 0.15 for the overlap integral of Bloch functions. For most films with a doping concentration below 1×1015 cm−3, Shockley–Read–Hall recombination via an acceptor-like deep level at about 40 meV below the conduction band affected lifetimes below 120 K. It was also found that the recombination parameters determined from fitting the lifetime versus temperature curves were adequate to analyze and understand the lifetime versus doping concentration curve, which comprised data from over 100 films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352087
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  • 5
    Electronic Resource
    Electronic Resource
    Study of vibrational properties of InGaAsP by far-infrared reflectivity (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3085-3088 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We measured room-temperature reflectivity in the far-infrared region (100–700 cm−1) of In1−xGaxAsyP1−y films grown by metalorganic phase epitaxy on InP substrate. The actual As content of the quaternary alloy (ranging from y=0.29 to y=1) was derived by combining photoluminescence and high-resolution x-ray diffraction results. Over the whole compositional range four different vibrational branches, corresponding to InAs-like, GaAs-like, InP-like, and GaP-like mode, have been observed, thus confirming the attribution of "four-mode behavior'' to the quaternary alloy. The frequency position of the four main peaks has been calculated within a valence-force-field model. The frequency shift of these peaks in the alloy with respect to the bulk values has been explained taking into account anharmonicity and strain effects by means of a simplified elastic model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356158
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  • 6
    Electronic Resource
    Electronic Resource
    Demonstration of scaled (≥0.12 μm2) Pb(Zr,Ti)O3 capacitors on W plugs with Al interconnect (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 4004-4006 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The measured switched polarization properties of integrated Pb(Zr,Ti)O3 (PZT) capacitors arrays have been found to show a small dependence on individual capacitor size in the range from 0.17 and 100 μm2. These thin (90 nm) PZT capacitors have low voltage switching properties with polarization saturation of 〈1.8 V with switched polarization for the smallest capacitors (0.17 μm2) still larger than 25 μC/cm2. The capacitor stack consisted of TiAlN hardmask/Ir/IrOx/PZT/Ir/TiAlN on either SiO2 dielectric or W plugs. The capacitor was patterned using 248 nm lithography and etched using only one mask. For wafers without W plugs, the Ir bottom electrode was not etched. For wafers with W plugs, the entire capacitor stack was etched and electrical connection to the bottom electrode was through the W plugs. The capacitors were integrated using SiO2 dielectrics and one level of Al metallization. These data suggest that high-density, ferroelectric capacitor-based memories may be feasible. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1423789
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  • 7
    Electronic Resource
    Electronic Resource
    Application of HfSiON as a gate dielectric material (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 3183-3185 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Physical and electrical properties of HfSiON that make this material desirable as the gate dielectric in a standard metal–oxide–semiconductor flow are reported. Sputtering was used to deposit films with minimal low dielectric constant interface layers, equivalent oxide thicknesses below 13 Å, and leakage current density at least two orders of magnitude lower than SiO2. The presence of nitrogen in the film enhances the thermal stability relative to HfSiO, and no crystallization was observed for anneals up to 1100 °C. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1476397
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  • 8
    Electronic Resource
    Electronic Resource
    Relationship between Receptor Status and Cytosol Levels of E1, E2, E3 and DHAS in Breast Carcinoma (1986)
    Oxford, UK : Blackwell Publishing Ltd
    Annals of the New York Academy of Sciences 464 (1986), S. 0 
    Details
    ISSN: 1749-6632
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Natural Sciences in General
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1749-6632.1986.tb16052.x
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  • 9
    Electronic Resource
    Electronic Resource
    Solid-to-liquid phase change and fragmentation in C60 (1995)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 102 (1995), S. 2151-2155 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We present a study of the thermodynamical properties of C60 in the microcanonical ensemble. Solidlike and metastable liquidlike form can be identified in the low energy and in the high energy range, respectively. The transition between the two phases is characterized by a finite energy range, in agreement with general theories of cluster melting. In particular, we have observed that the melting is preceded by a highly isomerized transition region where a sizeable atomic mobility is achieved via hopping between different isomer structures. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.468736
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  • 10
    Electronic Resource
    Electronic Resource
    Prediction of new sp2 and sp2/sp3 hollow carbon crystals (1997)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 106 (1997), S. 2311-2316 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Among the hypothetical forms of fully covalent carbon lattices with either graphite-like sp2 or mixed sp2/sp3 bonding we investigated the possibility of monocrystals with a hollow structure. We have calculated the structural, elastic and electronic properties of two prototypical face–centered cubic lattices C20 and C22, respectively, making also a critical comparison to diamond and graphite. The first of these lattices belongs to a new class of sp2–bonded periodic solids which we call hollow graphites. We give a topological classification of such solids along with the algorithm to generate them. Both crystals, having a nanoporous lattice made of periodic sequence of adjacent cavities, rather than the tubular structure of schwarzites, are characterized by a large internal specific area and should be suitable to form reversible high capacity lithium insertion compounds. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.473090
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