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  • 1
    Electronic Resource
    Electronic Resource
    A structural and electrical comparison of thin SiO2 films grown on silicon by plasma anodization and rapid thermal processing to furnace oxidation (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 5027-5035 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used capacitance-voltage (C-V) techniques and x-ray photoelectron spectroscopy (XPS) to study for the first time the electrical and structural properties of thin SiO2 films grown on silicon by plasma anodization and rapid thermal processes (RTO) and then compared them to furnace oxides. We have compared the SiO4 tetrahedral ring structure and the suboxide content of the ∼3-nm-thick interfacial region of these oxides and have found significant structural differences. By correlating these differences with measured electrical differences, we have identified the structural causes of some of the electrical characteristics of the plasma and RTO oxides. In plasma oxides we see larger amounts of silicon dangling bonds, Pb centers, at the Si-SiO2 interface and have identified these dangling bonds as the source of a localized peak of interface states found at 0.3 eV above the silicon valence band. Low-temperature rapid thermal annealing of the plasma oxides relieves localized compressive interfacial strain, apparently by allowing the completion of oxidation at the interface, and reduces the amount of dangling bonds. However, this strain relief simultaneously increases the average SiO4 ring structure at the interface. A larger interfacial SiO4 ring structure is also seen in rapid thermal oxides and has been attributed to the very rapid cooling which takes place at the end of the rapid thermal process. Post-growth thermal processing has been shown to reduce the average ring structure by relieving localized tensile interfacial stress, but this stress relief is accompanied by the appearance of a peak of interface states at about 0.8 eV above the valence band which is attributed to Si–O bonds broken during the anneal. Long furnace anneals of rapid thermal oxides remove these states and give interface state densities comparable to those of furnace oxides.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340450
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  • 2
    Electronic Resource
    Electronic Resource
    Epitaxial Y-Ba-Cu-O thin films on MgO deposited by high-pressure reactive magnetron sputtering (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 3148-3153 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Y-Ba-Cu-O thin films have been prepared on MgO(100) substrates by rf reactive magnetron sputtering from a single ceramic target. By adopting high total pressures, typically 280 mTorr, and relatively low substrate temperatures of approximately 650 °C, epitaxial films with the relations (001) YBa2Cu3Oy(parallel)(001)MgO and [100]YBa2Cu3Oy(parallel)[100]MgO can be reproducibly obtained. A high degree of epitaxy is confirmed by x-ray pole figure measurements and ion channeling. These films require a brief rapid thermal oxygen anneal at typically 850 °C, to exhibit sharp superconducting transitions with zero resistance around 75 K. Films deposited at higher temperatures above 700 °C show transitions as deposited with zero resistance near 80 K. The quality of the transition is correlated with expanded lattice constants with the best transitions occurring in films whose lattice constants approach that of the bulk. The films have high critical current densities of 1–5×106 A/cm2 at 4.2 K. They also show good uniformity and excellent surface morphology with a roughness less than 10 nm and can be readily patterned to micrometer and submicrometer dimensions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344151
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  • 3
    Electronic Resource
    Electronic Resource
    Ballistic electron magnetic microscopy studies of magnetization reversal in Co/Cu/Co trilayer films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 6490-6492 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used ballistic electron magnetic microscopy to image, with nanometer resolution, the magnetization behavior of Co/Cu/Co trilayer films in the presence of a magnetic field. Films prepared both by thermal evaporation and by magnetron sputtering have been studied. In each case we have observed both large, ∼500 nm, domain structures, and much smaller, apparently randomly dispersed, regions of magnetic misalignment between the Co layers that persist to fields 〉100 Oe. We find the details of the ballistic electron transport through the films to be different on small length scales, ∼50 nm, for the two types of growth methods. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372747
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  • 4
    Electronic Resource
    Electronic Resource
    Ballistic current transport studies of ferromagnetic multilayer films and tunnel junctions (invited) (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6642-6646 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Three applications of ballistic electron microscopy are used to study, with nanometer-scale resolution, the magnetic and electronic properties of magnetic multilayer thin films and tunnel junctions. First, the capabilities of ballistic electron magnetic microscopy are demonstrated through an investigation of the switching behavior of continuous Ni80Fe20/Cu/Co trilayer films in the presence of an applied magnetic field. Next, the ballistic, hot-electron transport properties of Co films and multilayers formed by thermal evaporation and magnetron sputtering are compared, a comparison which reveals significant differences in the ballistic transmissivity of thin film multilayers formed by the two techniques. Finally, the electronic properties of thin aluminum oxide tunnel junctions formed by thermal evaporation and sputter deposition are investigated. Here the ballistic electron microscopy studies yield a direct measurement of the barrier height of the aluminum oxide barriers, a result that is invariant over a wide range of oxidation conditions. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1356708
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  • 5
    Electronic Resource
    Electronic Resource
    Clean grain boundaries and weak links in high Tc superconducting YBa2Cu3O7−x thin films (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 508-510 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is demonstrated that polycrystalline thin films of high Tc superconducting YBa2Cu3O7−x can be grown with clean grain boundaries, i.e., without a boundary layer of segregation or different phase. In clean stoichiometric samples, angular misorientations of grains may be the origin of weak link behavior. High-resolution scanning transmission electron microscope images of films grown on ZrO2 and MgO by reactive evaporation, reactive sputtering, and laser ablation show atomic lattice images of clean grain boundaries. X-ray microanalysis with a 10 A(ring) spatial resolution also indicates no composition deviation at the grain boundaries. Grain sizes and epitaxial relations of samples prepared by different methods are characterized.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104242
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  • 6
    Electronic Resource
    Electronic Resource
    Growth of YBa2Cu3O7 thin films on MgO: The effect of substrate preparation (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1687-1689 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We discuss the results of a study of the effect of substrate preparation on the microstructure and superconductive properties of YBa2Cu3O7 thin films formed by laser ablation on (001) MgO substrates. Thermal annealing of the substrates is found to be highly effective in producing at fairly low growth temperatures (670 °C), epitaxial, c-axis normal films with good superconductive properties. Alternative surface treatments result in the formation of large angle tilt boundaries and inferior superconductive properties.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104137
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  • 7
    Electronic Resource
    Electronic Resource
    Fabrication of thin-film metal nanobridges (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2459-2461 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin-film fabrication techniques for forming three-dimensional "point contacts'' are presented. As-fabricated nanobridges can be modified using electromigration to make the constriction region smaller or dirtier. Scientific applications to quantum transport studies, 1/f noise, and electromigration are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102001
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  • 8
    Electronic Resource
    Electronic Resource
    Transport properties of high-angle grain boundary weak links in YBa2Cu3O7 thin films (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1095-1097 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By patterning ∼1-μm-wide microbridges in laser ablated YBa2Cu3O7 films containing high-angle tilt boundaries, weak links have been isolated with critical currents low enough to avoid self-screening effects. The current-voltage characteristics of these high-angle tilt-boundary weak links are well described by the resistively shunted junction model, if noise rounding is included. The response of the supercurrent to magnetic field and temperature indicates that the weak links are spatially nonuniform, consisting of relatively small areas of high critical current density, Jc, separated by areas with very low or zero Jc. The response to rf power suggests that the current-phase relation is nonsinusoidal.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104382
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  • 9
    Electronic Resource
    Electronic Resource
    Ballistic electron studies and modification of the Au/Si interface (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2826-2828 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Au/Si(111) interface has been investigated with ballistic electron emission microscopy. The Schottky barrier (SB) height and ballistic transmittance have been measured on interfaces which have been prepared with different types of monolayer-level dopants. Transmission rates but not the SB are found to depend strongly on the resulting degree of interdiffusion of the Au and Si at the interface. An irreversible modification in the transport properties of the buried interface can occur when the system is stressed with electrons injected at several volts above the Schottky barrier.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103754
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  • 10
    Electronic Resource
    Electronic Resource
    Scaling behavior of YBa2Cu3O7−δ thin-film weak links (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1155-1157 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The superconductive weak link properties of microbridges formed in c-axis normal YBa2Cu3O7−δ polycrystalline thin films containing a variable amount of large angle tilt boundaries have been studied. In the low critical current density limit these weak links have current-voltage (I-V) characteristics that are accurately modeled by the resistively shunted junction model. The I-V's are found to accurately follow a simple scaling law with the product of the critical current and weak link resistance Rn varying linearly with the weak link conductance.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104223
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