ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
The MOCVD-growth and annealing of InN films have been studied in this work. TheXRD spectra of InN films grown at 350 ºC~500 ºC indicate that the diffraction of In increases with increasing the growth temperature to 425 ºC and the temperature higher than 425 ºC causes the decrease of In diffraction. The corresponding SEM images show that In grains disappear from the surface as the growth temperature is higher than 425 ºC. These are attributed to the increase of the desorption of In with the growth temperature. In addition, the SEM images of the annealed InNfilms also show that the In grains decrease gradually as the annealing temperature is higher than 425 ºC. Thus, it is concluded that the desorption of In is the main process as the temperature is higher than 425 ºC
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/10/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.475-479.3717.pdf
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