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  • 1
    Electronic Resource
    Electronic Resource
    Crosshatched surface morphology in strained III-V semiconductor films (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4093-4098 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The correlation between the surface crosshatched morphology and the interfacial misfit dislocations in strained III-V semiconductor heteroepitaxy has been studied. The surface pattern is clearly seen on samples grown at high temperature (520 °C) and those with small lattice-mismatched (f〈2%) systems. A poorly defined crosshatched morphology was found on layers grown at relatively low temperature (400 °C). As the lattice mismatch of the strained layer becomes larger than 2%, a roughly textured surface morphology is commonly observed in place of actual cross-hatching. Few threading dislocations are observed in the strained layer when the crosshatched pattern develops. It is also noted that the surface crosshatched pattern develops after the majority of the interfacial misfit dislocations are generated. The result suggests that the surface crosshatch pattern is directly related to the generation of interfacial misfit dislocations through glide processes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344968
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  • 2
    Electronic Resource
    Electronic Resource
    Modeling growth of Si1−xGex epitaxial films from disilane and germane (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 5193-5196 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A Langmuir–Hinshelwood-type kinetic model is developed for modeling growth of silicon–germanium alloys from disilane and germane on Si substrates. Gas source molecular beam epitaxy was employed to grow Si1−xGex films at various germanium fractions, x, in the alloy and at different temperatures. The model correctly predicts experimentally observed and previously reported behavior; a monotonic decrease with germanium fraction at higher substrate temperatures (700 °C) and a maximum in the growth rate for lower temperatures (550 °C and 610 °C).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353745
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  • 3
    Electronic Resource
    Electronic Resource
    Fe and Cr doping of liquid-phase epitaxial In0.53Ga0.47As/InP (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 333-337 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fe and Cr doping of liquid-phase epitaxial In0.53Ga0.47As grown at 650 °C on InP substrates have been investigated. Varying amounts of high-purity Fe and Cr have been added to the growth melt. The resistivity of Fe-doped layers increases with increase of Fe added to the melt, and layers with ND−NA as low as 2.0×1012 cm−3 can be grown consistently. From analysis of temperature-dependent Hall data on conducting Fe-doped samples, the Fe acceptor ionization energy is found to be 0.46 eV. No additional feature is seen in the 4 K band-edge photoluminescence spectra of Fe-doped layers. Cr doping seems to produce donorlike behavior and the electron concentration increases monotonically with increased addition of Cr to the melt. An additional peak, separated from the band-gap energy by 24 meV is seen in the photoluminescence spectra of Cr-doped samples. It is believed that Cr itself, or a complex defect involving Cr is responsible for the formation of a donorlike center.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334810
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  • 4
    Electronic Resource
    Electronic Resource
    Photoluminescence linewidth of self-organized In0.4Ga0.6As/GaAs quantum dots grown on InGaAlAs stressor dots (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4691-4693 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The molecular beam epitaxial growth of self-organized In0.4Ga0.6As/GaAs quantum dots on buried InGaAsAs/GaAs stressor dots has been characterized by photoluminescence measurements and cross-sectional transmission electron microscopy. The presence of the stressor dots enhances the growth rate and spatial uniformity of the In0.4Ga0.6As dots. The incorporation of Al in the stressor dots not only provides a strain field, but also inhibits carrier recombination therein. A low photoluminescence linewidth of 21 meV, almost invariant in the temperature range of 7–100 K was measured in a heterostructure with an optimal number of stressor and active dot layers. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371421
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  • 5
    Electronic Resource
    Electronic Resource
    Role of strain and growth conditions on the growth front profile of InxGa1−xAs on GaAs during the pseudomorphic growth regime (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 684-686 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Theoretical and experimental studies are presented to understand the initial stages of growth of InGaAs on GaAs. Thermodynamic considerations show that, as strain increases, the free-energy minimum surface of the epilayer is not atomically flat, but three-dimensional in form. Since by altering growth conditions the strained epilayer can be grown near equilibrium or far from equilibrium, the effect of strain on growth modes can be studied. In situ reflection high-energy electron diffraction studies are carried out to study the growth modes and surface lattice spacing before the onset of dislocations. The surface lattice constant does not change abruptly from that of the substrate to that of the epilayer at the critical thickness, but changes monotonically. These observations are consistent with the simple thermodynamic considerations presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99850
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  • 6
    Electronic Resource
    Electronic Resource
    Orientation-dependent phase modulation in InGaAs/GaAs multiquantum well waveguides (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2129-2131 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electro-optic effect and phase modulation in In0.2 Ga0.8 As/GaAs multiple quantum wells have been experimentally studied for the first time. The experiments were done with 1.06 and 1.15 μm photoexcitation which are, respectively, 25 and 115 meV below the electron–heavy hole excitonic resonance. Strong quadratic electro-optic effect was observed near the excitonic edge in addition to the linear effect. These are characterized by r63 =−1.85×10−19 m/V and (R33 −R13 )=2.9×10−19 m2 /V2 . In addition, we observe a dispersion in the value of r63 . The relative phase shifts are higher in the strained system at 1.06 μm than in lattice-matched GaAs/AlGaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100295
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  • 7
    Electronic Resource
    Electronic Resource
    Molecular beam epitaxial GaAs optical detectors on silica fibers (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1768-1770 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By using molecular beam epitaxy and post-growth annealing techniques, we have successfully made GaAs interdigitated photoconductive detectors on D-shaped silica fibers. The detectors exhibit low leakage current and internal photoconductive gains of up to 15 are measured. To our knowledge this is the first realization of active III-V optoelectronic devices on fibers and opens up the possibility of realizing optoelectronic integration and circuits directly on fibers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99620
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  • 8
    Electronic Resource
    Electronic Resource
    Single mode optical waveguides and phase shifters using InGaAlAs on InP grown by molecular beam epitaxy (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 103-104 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the characteristics of molecular beam epitaxial In0.53 (Gax Al1−x )0.47 As/InP waveguides and phase modulators in the 1.15–1.3 μm wavelength range. Loss at 1.15 μm has been measured and is ∼5 dB/cm. The measured phase shift due to the electro-optic effect results in an electro-optic coefficient r63 ∼0.6×10−12 m/V. Preliminary results at 1.3 μm show that the loss is reduced and is ∼3.4 dB/cm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103045
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  • 9
    Electronic Resource
    Electronic Resource
    Demonstration of all-optical modulation in a vertical guided-wave nonlinear coupler (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1125-1127 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The performance characteristics of an AlGaAs dual waveguide vertical coupler with a nonlinear GaAs/AlGaAs multiquantum well coupling medium are demonstrated. The structure was grown by molecular beam epitaxy and fabricated by optical lithography and ion milling. The nonlinear coupling and modulation behavior is identical to that predicted theoretically. The nonlinear index of refraction and critical input power are estimated to be n2=1.67×10−5 cm2/W and Pc=170 W/cm2, respectively. This device also allows reliable measurement of the nonlinear refractive index for varying quantum well and optical excitation parameters.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99182
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  • 10
    Electronic Resource
    Electronic Resource
    Performance characteristics of InGaAs/GaAs and GaAs/InGaAlAs coherently strained superlattice photodiodes (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1164-1166 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The properties of In0.24Ga0.76As/GaAs and GaAs/In0.05Ga0.58Al0.37As superlattice photodiodes grown by molecular beam epitaxy have been investigated. From the temporal response characteristics, deconvolved rise times ∼60–100 ps are obtained. The measured responsivities of the photodiodes with dark currents of 5–10 nA at 10 V are ∼0.4 A/W, which correspond to peak external quantum efficiencies of ∼60%. These results indicate that very high performance photodiodes can be realized with strained layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98720
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