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  • 1
    Electronic Resource
    Electronic Resource
    The electrical and defect properties of erbium-implanted silicon (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2667-2671 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A detailed study of the electrical and defect properties of ion-implanted erbium in silicon shows that erbium doping introduces donor states. The concentration of erbium related donors as a function of implant dose saturates at 4×1016 cm−3 at a peak implanted Er-ion concentration of (4–7)×1017 cm−3. The defect levels related to erbium in silicon are characterized by deep level transient spectroscopy and identified as E(0.09), E(0.06), E(0.14), E(0.18), E(0.27), E(0.31), E(0.32), and E(0.48). The dependence of the photoluminescence on annealing temperature for float zone and for Czochralski-grown silicon show that oxygen and lattice defects can enhance the luminescence at 1.54 μm from the erbium. Temperature-dependent capacitance-voltage profiling shows donor emission steps when the Fermi level crosses EC − ET = 0.06 eV and EC − ET = 0.16 eV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349381
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  • 2
    Electronic Resource
    Electronic Resource
    Impurity enhancement of the 1.54-μm Er3+ luminescence in silicon (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2672-2678 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of impurity coimplantation in MeV erbium-implanted silicon is studied. A significant increase in the intensity of the 1.54-μm Er3+ emission was observed for different coimplants. This study shows that the Er3+ emission is observed if erbium can form an impurity complex in silicon. The influence of these impurities on the Er3+ photoluminescence spectrum is demonstrated. Furthermore we show the first room-temperature photoluminescence spectrum of erbium in crystalline silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349382
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  • 3
    Electronic Resource
    Electronic Resource
    Formation of extended defects in silicon by high energy implantation of B and P (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2105-2112 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The extended defects induced in silicon by high energy implantation (1.5 MeV B and 2.6 MeV P) have been investigated by plan-view and cross-sectional transmission electron microscopy studies and defect etching measurements. The threading dislocations were identified to be long dislocation dipoles generated in the region of the ion projected range which grew up to the surface. The formation of threading dislocations is shown to have a strong dependence on the implantation dose and O concentration. After 900 °C annealing, a high density of threading dislocations was formed for B and P implants in a dose range of 5×1013–2×1014 cm−2 and 5×1013–3×1014 cm−2, respectively. The threading dislocation density in B-implanted Czochralski Si substrates was found to be much higher than that in B-implanted epitaxial Si substrates. This difference is attributed to the strong pinning effect of oxygen immobilizing dislocations in Czochralski substrates. Because P impurities are also efficient at pinning dislocation motion in Si, a high density of threading dislocations was observed even in epitaxial Si substrates with P implantation. Two-step annealing with a first step at 700 °C (to precipitate oxygen) and a second step at 900 °C was found to be very effective at eliminating the formation of threading dislocations. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363103
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  • 4
    Electronic Resource
    Electronic Resource
    Iron gettering mechanisms in silicon (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 3275-3284 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Boron implantation into silicon offers a unique system for studying the gettering mechanisms of Fe. Using deep level transient spectroscopy to monitor the remaining Fe in the gettered region and secondary-ion-mass spectroscopy to measure the concentration of Fe redistributed to the B region, we show that the gettering mechanisms can be quantitatively described. A combination of Fermi-level-induced Fe+ charge-state stabilization and Fe+–B− pairing acts to lower the free energy of Fe in p+ regions. This can lead to Fe partition coefficients as high as 106 at a p+/p interface at temperatures below ≈400 °C. The dynamic response of the system is diffusion limited during the cooling cycle. B gettering is more effective than gettering produced by Si implantation damage and more effective than trapping by a neutral impurity such as C. These mechanisms also make a large contribution to the effective gettering of Fe by p/p+ epitaxial silicon wafers. The Fermi-level/pairing gettering mechanism is also expected to operate for Cr and Mn. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363236
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  • 5
    Electronic Resource
    Electronic Resource
    Microstructure of erbium-implanted Si (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2797-2799 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A study is presented of the relation between microstructure and 1.54 μm photoluminescence (PL) in high-energy ion-implantated Er in Si as a function of implant dose, energy, and temperature and subsequent anneal. Transmission electron microscopy (TEM) of material implanted at 500 keV and (approximately-greater-than)100 °C and annealed at 900 °C to activate the Er PL suggests the solubility of Er in Si to be ≈1.3±0.4× 1018 cm−3 at 900 °C. Precipitates take the form of platelets (probably ErSi2) ≈100–300 A(ring) in diameter and ≈10 A(ring) thick. The 1.54 μm PL saturates at ≈5× 1017 cm−3, before the apparent solubility limit. Layers in which the Si is fully amorphized and subsequently regrown by solid phase epitaxy during an anneal show increased Er incorporation in the crystalline Si but segregation at the amorphous-crystalline interface. In buried amorphous layers regrown from top and bottom, segregation leads to a line of high Er concentration near the center of the layer: Regrowth from a single interface leads to a segregation pileup of Er at the interface until the precipitation threshhold is reached.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104739
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  • 6
    Electronic Resource
    Electronic Resource
    The mechanism of iron gettering in boron-doped silicon (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 51-53 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-energy B implantation was used to introduce gettering layers into float-zone Si wafers contaminated with 2×1014 Fe/cm3. Secondary ion mass spectrometry shows that about 5% of the Fe contamination is collected at the 4 μm deep peak of a 4×1014/cm2, 3.3 MeV B implant after annealing at 1000 °C for 1 h. Deep level transient spectroscopy demonstrates that increasing the gettering B dose from 4×1012 to 4×1014/cm2 reduces the Fe concentration from 3×1012 to below ∼1010/cm3 in the 1–3 μm deep region from the surface, indicating very efficient gettering. Measurements of the Fe depth profile imply that the depletion of Fe near the gettering layer occurs upon cooling down from 1000 °C. The gettering behavior can be qualitatively understood in terms of a Fermi-level-enhanced pairing reaction between Fe and B. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116754
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  • 7
    Electronic Resource
    Electronic Resource
    Interstitial defect reactions in silicon (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 256-258 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep level transient spectroscopy has been employed in a study of impurity-interstitial defect reactions in silicon following room-temperature electron irradiation. Three defects have been isolated and identified from their reactions and electrical properties as Cs-Ci, Ci-Oi, and Ps-Ci. The Cs-Ci, ME[(0.10), (0.17)] and Ps-Ci, ME[(0.21), (0.23), (0.27), (0.30)] defects exhibit metastable structural transformations. Our results reveal the multistructural nature and chemical reactivity of the silicon self-interstitial.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98465
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  • 8
    Electronic Resource
    Electronic Resource
    Influence of misfit dislocation interactions on photoluminescence spectra of SiGe on patterned Si (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 3773-3776 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Si substrates were patterned and etched to create arrays of squares separated by 10 μm trenches. Some edges of these squares were ion implanted with a large dose of Ge to create damaged regions that act as misfit dislocation nucleation centers during molecular beam epitaxy of a 700 nm Si0.90Ge0.10 lattice mismatched layer. Low temperature photoluminescence spectra of the material were obtained with an illuminated area selected so that only one type of edge implant was studied at a time. Sub-band gap luminescence peaks associated with dislocations, D lines, were found only in the squares with implants, consistent with electron microscopy results that showed that the control squares had few misfit dislocations. A large D1 luminescence peak was observed in samples that consisted of intersecting arrays of misfit dislocations, while only a small peak was present in specimens implanted such that dislocations lay in only one in-plane direction. These results are interpreted to mean that the D1 peak is intrinsic to the dislocations themselves and not to impurity gettering. These observations further infer that D1 luminescence is related to dislocation kinks. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366606
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  • 9
    Electronic Resource
    Electronic Resource
    Local structure of 1.54-μm-luminescence Er3+ implanted in Si (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 2181-2183 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Extended x-ray absorption fine structure measurements from Er-implanted Czochralski-grown Si samples, which exhibit strong luminescence at 1.54 μm, reveal a local sixfold coordination around Er−not of Si−but of oxygen atoms at an average distance of 2.25 A(ring). By contrast, similar concentrations of Er implanted in high purity float-zone Si samples, which are essentially optically inactive, show that Er is coordinated to 12 Si atoms at a mean distance of 3.00 A(ring).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108288
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  • 10
    Electronic Resource
    Electronic Resource
    Evolution of interstitial- and vacancy-type defects upon thermal annealing in ion-implanted Si (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 389-391 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have quantitatively analyzed the structure and the annealing behavior of the point defects introduced by ion implantation in Si. We used deep-level transient spectroscopy to monitor and count interstitial-type (e.g., carbon–oxygen complexes) and vacancy-type (e.g., divacancies) defects introduced by MeV Si implants in crystalline Si and to monitor their annealing behavior for temperatures up to 400 °C. A small fraction (∼4%) of the initial interstitial–vacancy pairs generated by the ions escapes recombination and forms equal concentrations of interstitial- and vacancy-type room-temperature stable defect pairs. At T≤300 °C, vacancy-type defects dissociate, releasing free vacancies, which recombine with interstitial-type defects, producing their dissolution. This defect annihilation occurs preferentially in the bulk. At temperatures above 300 °C, all vacancy-type defects are annealed and the residual damage contains only ∼3 interstitial-type defects per implanted ion. This imbalance between vacancies and interstitials is not observed in electron-irradiated samples, demonstrating that it is the direct consequence of the extra ion introduced by the implantation process. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119546
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