ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Structure of the “carrot” defects in 4H-SiC homoepitaxial layers deposited by CVD hasbeen investigated by plan-view and cross-sectional transmission x-ray topography, cross-sectionaltransmission electron microscopy, atomic force microscopy, and KOH etching. The carrot defectsnucleate at the substrate/epilayer interface at the emergence points of threading screw dislocationspropagating from the substrate. The typical defect consists of two stacking faults: one in the prismaticplane with second one in the basal plane. The faults are connected by a stair-rod dislocation withBurgers vector 1/n[10-10] with n〉3 at the cross-over. The basal plane fault is of Frank-type. Carrotdefects are electrically active as evidenced by contrast in EBIC images indicating enhanced carrierrecombination rate. Presence of carrot defects in the p-i-n diodes results in higher pre-breakdownreverse leakage current and approximately 50% lower breakdown voltage compared to the nominalvalue
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.327.pdf
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