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  • 1
    Electronic Resource
    Electronic Resource
    Effect of Nd3+ concentration on the emission spectra of CaF2:Nd layers grown by molecular-beam epitaxy (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4485-4489 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nd3+-doped CaF2 monocrystalline films have been grown by molecular-beam epitaxy using CaF2 and NdF3 evaporation on CaF2 (100) substrates. Auger electron spectrometry and high-energy electron diffraction have been used as in situ techniques to characterize the grown layers. No degradation of crystallinity was observed even for the highest levels of doping considered. The effect of Nd3+ concentration is studied by means of the photoluminescence signal of Nd3+ ions. The results can be compared favorably with those of bulk CaF2:Nd crystals. For a given Nd3+ concentration a lower quantity of Nd3+ aggregate centers is observed. Nd3+ ions can, therefore, be efficiently incorporated in isolated Nd3+-F− centers up to concentrations of 3.7 wt % Nd3+ without emission quenching of the associated line at 1.0457 μm. The results are related to the thermodynamic conditions imposed by the molecular-beam epitaxy technique.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349082
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  • 2
    Electronic Resource
    Electronic Resource
    Infrared fluorescence spectra of Nd3+ sites in gadolinium gallium garnet:Nd and gadolinium gallium garnet:Nd,Cr (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 5876-5880 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The fluorescence (excitation and emission) spectra of Nd3+ ions in gadolinium gallium garnet (GGG):Nd and GGG:Nd,Cr have been investigated in the spectral region of laser interest, 4F3/2→4I11/2 transitions. Four sites, denoted as α, β, γ, and δ are present in GGG:Nd, while two additional sites, ε and ζ, appear in GGG:Nd,Cr crystals. Site selective excitation (by using a Ti-sapphire laser) has permitted to obtain the energy level values for each Nd3+ site. This information is necessary for making lasers with these materials. Thus, it has been determined that the γ site is the responsible for laser action in the GGG:Nd minilasers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351893
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  • 3
    Electronic Resource
    Electronic Resource
    Molecular beam epitaxy of Nd-doped CaF2 and CaSrF2 layers on Si and GaAs substrates (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 499-503 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The incorporation of Nd3+ in CaF2 layers grown on Si and GaAs substrates by molecular beam epitaxy is studied by photoluminescence spectroscopy. The results are in qualitative agreement with those obtained on CaF2:Nd homoepitaxial layers. A lower emission intensity (∼70%) at λ=1.0475 μm is attributed to residual stress and crystalline defects. Concentration quenching of photoluminescence appears at concentrations higher than 3.6 wt % Nd. The use of (Ca,Sr)F2 for lattice matching to GaAs leads to a significant inhomogeneous broadening of Nd3+ emissions due to disorder in the cationic sublattice.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351880
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  • 4
    Electronic Resource
    Electronic Resource
    Laser-excited luminescence in Ti-doped MgAl2O4 spinel (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 736-740 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoluminescence (excitation, emission, and fluorescence decay time) spectra of spinel (Ti:MgAl2O4) excited by pulsed Nd:YAG and dye lasers have been systematically investigated. Excitation into the T2g→Eg crystal-field transition of Ti3+ produces a broad infrared emission band at 805 nm which could, in principle, be used for tunable laser applications. Two different Ti3+ centers with lifetimes of 4.2 and 41 μs contribute to this emission. At the same time this IR band can also be observed under high-intensity excitation in the ultraviolet region (266 nm) via a two-photon process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346807
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  • 5
    Electronic Resource
    Electronic Resource
    Continuous wave infrared laser action, self-frequency doubling, and tunability of Yb3+:MgO:LiNbO3 (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 4056-4062 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The laser performance of the nonlinear Yb3+:MgO:LiNbO3 crystal is assessed under Ti:sapphire laser pumping. Spectral properties related to infrared laser action such as the emission and absorption cross sections have been evaluated. Different crystallographic configurations have been used. Laser oscillation in the near infrared region has been observed along the crystallographic c axis and along the type I phase matching direction for infrared to green generation. High slope efficiency in the infrared region (62%) and the possibility of low laser thresholds (14.7 mW) are demonstrated. By using a birefringent filter, broadband tuning from 1030 to 1070 nm is obtained in this system. In addition, 58 mW of green power by self-frequency doubling of infrared laser emission is achieved, revealing the potential of LiNbO3:MgO as a self-frequency-doubling material. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373030
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  • 6
    Electronic Resource
    Electronic Resource
    1.54 μm wavelength emission of highly Er-doped CaF2 layers grown by molecular-beam epitaxy (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 270-273 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CaF2:Er layers have been grown by molecular-beam epitaxy on (100)-oriented CaF2 substrates; the Er concentration ranges from 1% to 50% (mole fraction). The 1.54 μm emission observed under excitation around 800 nm was studied by photoluminescence. Up to 35% Er concentration the integrated emission increases monotonously, quenching appearing for higher doping levels. Photoluminescence results are discussed within the framework of previous studies of Er3+ emission in the near-infrared range (830–860 nm) in order to gain insight into the Er centers involved in the 1.54 μm emission.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357140
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  • 7
    Electronic Resource
    Electronic Resource
    Effect of growth temperature and doping concentration on the distribution of the emitting centers in CaF2:Er molecular beam epitaxial layers (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2749-2752 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Molecular beam epitaxy of Er-doped CaF2 layers on (100)oriented CaF2 substrates was performed using CaF2 and ErF3 evaporation cells. The effect of growth temperature and Er concentration on the distribution of the different emission centers observed in these epitaxial Er-doped layers was investigated. Photoluminescence analyses were performed in the 830–860 nm wavelength range in which the 4S3/2→4I13/2 transitions of the Er3+ ions take place. The evolution of the relative emission intensity between single and aggregate Er3+ centers as a function of growth temperature shows that the emission from isolated Er3+ ions is favored in a growth temperature range of 500–520 °C. Emission lines from complex Er3+ centers are found to rise relative to those of isolated sites as Er concentration increases. Finally, no quenching of the integrated luminescence intensity occurs in the concentration range investigated, 0.05–6 mol % (0.1–16 wt%).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356211
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  • 8
    Electronic Resource
    Electronic Resource
    Influence of the stoichiometry in the site distribution of Cr3+ ions in LiNbO3 (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1887-1888 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter the influence of the stoichiometry ([Li]/[Nb] ratio) on the R absorption lines of Cr3+ in LiNbO3 has been investigated. It is shown that Cr3+ ions occupy the Li+ and Nb5+ lattice sites but their relative distribution is modified by changing the melt composition ([Li]/[Nb] ratio). It has been also concluded that the defects associated to the nonstoichiometry (antisites and Nb vacancies) of the crystal host are responsible for the incorporation of Cr3+ ions into the LiNbO3 matrix.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109532
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  • 9
    Electronic Resource
    Electronic Resource
    Optimal growth conditions for molecular-beam epitaxy of Nd3+ doped CaF2 (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 3511-3513 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nd3+ incorporation in CaF2 layers grown by molecular-beam epitaxy on CaF2 substrates is investigated by making use of the photoluminescence lines associated with Nd3+ centers involving one or several Nd3+ ions. It is shown that the substrate crystal orientation has no effect on the aggregation state of Nd3+ while the growth temperature greatly influences the formation of Nd3+ aggregate centers. An optimum growth temperature around 500 °C is determined, leading to CaF2 layers of good crystal quality in which the main emission, related to single Nd3+ centers, is optimized. The results have been obtained for Nd3+ concentrations as high as 3.6 wt % Nd and growth rates in the range of 0.2–1 μm/h.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105665
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  • 10
    Electronic Resource
    Electronic Resource
    Er3+ doping of CaF2 layers grown by molecular beam epitaxy (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2616-2618 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Molecular beam epitaxy of CaF2 monocrystalline layers Er3+ doped up to a concentration of 5 wt % is demonstrated on CaF2 substrates. Separated effusion cells containing CaF2 and ErF3 were used. The photoluminescence spectra of the samples show emissions from centers of different symmetry identified by reference to published results obtained on CaF2:Er3+ bulk crystals. No influence of the substrate orientation—(100) or (111)—on the luminescence characteristics was observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109263
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