ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Influence of the electron beam evaporation rate of Pt and the semiconductor carrier density on the characteristics of Pt/n-GaAs Schottky contacts (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 6172-6176 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Schottky barrier diodes (SBDs) were fabricated on epitaxially grown n-GaAs materials, with different free carrier densities, by electron beam (e-beam) evaporation of Pt at various rates. The quality of the SBDs was evaluated by standard current-voltage (I-V) measurements, while the defects introduced during e-beam evaporation were characterized by deep level transient spectroscopy (DLTS). The results showed that if the GaAs was shielded during Pt deposition from stray electrons originating at the e-beam filament, high quality SBDs were formed. However, if the GaAs was not shielded during deposition, the quality of the diodes was poor and the degree to which their characteristics deviated from the ideal case increased as the total electron dose reaching the substrate increased (for slow evaporation rates) and as the free carrier density of the GaAs increased. DLTS revealed that several surface and subsurface defects were introduced during metallization without the electron shield and it is shown that these defects are responsible for the poor device quality. The nature of some of these defects depended on the free carrier density of the GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350426
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Modified sample holder for low-temperature deep-level transient spectroscopy, current-voltage and capacitance-voltage measurements (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 2101-2102 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: This note describes the design, construction, and test results of a modified sample holder used during low-temperature deep-level transient spectroscopy, current-voltage and capacitance-voltage measurements. This improved sample holder allows temperature scan rates of up to 6 K/min with a temperature shift of less than 1 K. High electrical isolation makes this sample holder also suitable for low-temperature current-voltage and capacitance-voltage measurements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1143175
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Hole defects in molecular beam epitaxially grown p-GaAs introduced by alpha irradiation (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 1222-1224 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial aluminum Schottky barrier diodes on molecular beam epitaxially grown p-GaAs with a free carrier density of 2×1016 cm−3 were irradiated with alpha particles at room temperature using an americium-241 (Am-241) radio nuclide. For the first time, the radiation induced hole defects are characterized using conventional deep level transient spectroscopy (DLTS). The introduction rates and DLTS "signatures'' of three prominent radiation induced defects Hα1, Hα4, and Hα5, situated 0.08, 0.20, and 0.30 eV above the valence band, respectively, are calculated and compared to those of similar defects introduced during electron irradiation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356460
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Electrical characterization of defects introduced in p-Si1−xGex during electron-beam deposition of Sc Schottky barrier diodes (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1069-1071 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Scandium (Sc) Schottky barrier diodes were fabricated by electron-beam (EB) deposition on epitaxially grown p-Si1−xGex strained films with x=0.0–0.2. The EB deposition was performed either with or without shielding the Si1−xGex samples. The barrier height and the defects introduced during EB deposition have been investigated as a function of Ge composition. Our results showed that the barrier height decreased as the band gap changed with increasing Ge content. The defect properties were studied with deep-level transient spectroscopy. The most prominent defect observed in p-Si was a hole trap H(0.53) at Eν+0.53 eV. Increasing the Ge content led to a decrease in the activation energy of this defect and this decrease followed the same trend as the band-gap variation, suggesting that the main defect detected in p-Si1−xGex is the same as that observed in p-Si. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120967
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Electronic and transformation properties of a metastable defect introduced in epitaxially grown boron-doped p-type Si by alpha particle irradiation (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 3178-3180 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Titanium (Ti) Schottky barrier diodes on epitaxially grown boron-doped p-type Si films with a free carrier density of 6–8×1016 cm−3 were irradiated with alpha particles at room temperature using an americium-241 (Am-241) radio nuclide. We report the electronic and transformation characteristics of an α-particle irradiation-induced defect Hα2 in epitaxially grown p-Si with metastable properties. The energy level and apparent capture cross section, as determined by deep-level transient spectroscopy, are Ev+0.43 eV and 1.4×10−15 cm2, respectively. This defect can be removed and re-introduced using a conventional bias-on/off cooling technique. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121585
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Deep level transient spectroscopy characterization of 1 keV He, Ne, and Ar ion bombarded, epitaxially grown n-Si (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 2565-2570 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep level transient spectroscopy has been used to investigate the electronic properties and isochronal annealing behavior of defects formed in epitaxially grown n-Si by 1 keV He-, Ne-, and Ar-ion bombardment. Similarities between peaks found for the different bombardment gases suggested that they were from structurally related defects. Two families of such related defects were observed in the unannealed samples. Annealing data revealed additional peaks and enabled another defect family formed above 400 °C to be identified. The energy levels and capture cross sections have been determined for three new families of related defects. The defect families were presumed to be either complex vacancy clusters or hydrogen related. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368439
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Characterization of optically active defects created by noble gas ion bombardment of silicon (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 4075-4080 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The modification in the G-line (969.5 meV) and the C-line (789.4 meV) photoluminescence (PL) intensities were studied as a function of the fluence, energy, and mass of the bombarding ions (He, Ne, Ar, and Kr). The intensities of the luminescent lines induced by 1 keV Ne bombardment were found to decrease with increasing dose after reaching a maximum at about 1×1012 ions/cm2. Considerable reductions in the intensities of the G- and C-lines were also recorded during bombardment using heavier noble gas ions and they have been attributed to the higher rates of nuclear energy deposition with increasing bombarding ion mass. The incident ion energy at which the PL intensities of the spectral lines reached their maximum values was found to be dependent on the ion mass and fluence. We have explained the decrease in PL intensities of the G-line and C-line to be due to the introduction of increased amounts of nonradiative recombination centers with increasing incident ion dose and mass. Further, the integral sum of defects induced during bombardment as a function of projected ion range and excitation depth of the Ar-ion laser has been used to qualitatively describe the decrease in the intensities of the two lines. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367227
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Electrical characterization of He-plasma processed n-GaAs (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 1973-1976 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We employed capacitance-voltage (C–V) measurements to determine the free-carrier concentration changes in n-GaAs after processing it in a He plasma, and deep-level transient spectroscopy (DLTS) to study the electrical properties of the plasma-induced defects. C–V measurements indicated that He-plasma processing resulted in a strong carrier reduction up to 1 μm below the GaAs surface. DLTS showed that He-ion processing introduced several prominent defects, including the frequently studied radiation-induced defects E1 and E2, associated with VAs. Current-voltage measurements demonstrated that the He-plasma processing inhibits the fabrication of high barrier Schottky diodes on n-GaAs. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368329
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    A deep level transient spectroscopy characterization of defects induced in epitaxially grown n-Si by low-energy He-ion bombardment (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 5576-5578 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxially grown n-Si was bombarded with low-energy (1 keV) He ions. Deep level transient spectroscopy revealed that this introduced four prominent defects with energy levels at 0.14, 0.20, 0.30, and 0.55 eV, respectively, below the conduction band. The electronic properties and annealing behavior of these defects are different to those of the main defects, namely, divacancies (V2) and vacancy-phosphorous centers, observed after 5.4 MeV He-ion bombardment of the same material. We propose that, except for the defect with an energy level at Ec−0.14 eV, the defects introduced by 1 keV He-ion bombardment of n-Si may be related to: (1) vacancy clusters larger than divacancies, or (2) incorporation of He and H into V2 or higher-order vacancy clusters. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367395
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Single scan defect identification by deep level transient spectroscopy using a two-phase lock-in amplifier (IQ-DLTS) (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 973-976 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simple method of analyzing the deep level transient spectroscopy (DLTS) transient signal by recording its in-phase (I) and quadrature (Q) DLTS spectra using a two-phase lock-in amplifier with a sine wave mixing function, IQ-DLTS, is presented. Measurement of the peak positions on the I and Q spectra, which are simultaneously recorded during a single temperature scan, facilitates the calculation of the defect's activation energy Et, and capture cross section σt, which are required for its identification. It was found that the Et values obtained when analyzing proton implantation-induced defects in GaAs were within 5% of those determined from the conventional DLTS Arrhenius plots.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340047
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...