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  • 1
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    PANGAEA
    In:  Supplement to: Durand, Axel; Chase, Zanna; Noble, Taryn L; Bostock, Helen C; Jaccard, Samuel L; Kitchener, Priya; Townsend, Ashley T; Jansen, Nils; Kinsley, Les; Jacobsen, Geraldine; Johnson, Sean; Neil, Helen L (2017): Export production in the New-Zealand region since the Last Glacial Maximum. Earth and Planetary Science Letters, 469, 110-122, https://doi.org/10.1016/j.epsl.2017.03.035
    Publication Date: 2023-06-27
    Description: Increased export production (EP) in the Subantarctic Zone (SAZ) of the Southern Ocean due to iron fertilisation has been proposed as a key mechanism for explaining carbon drawdown during the last glacial maximum (LGM). This work reconstructs marine EP since the LGM at four sites around New Zealand. For the first time in this region, 230-Thorium-normalised fluxes of biogenic opal, carbonate, excess barium, and organic carbon are presented. In Subtropical Waters and the SAZ, these flux variations show that EP has not changed markedly since the LGM. The only exception is a site currently north of the subtropical front. Here we suggest the subtropical front shifted over the core site between 18 and 12 ka, driving increased EP. To understand why EP remained mostly low and constant elsewhere, lithogenic fluxes at the four sites were measured to investigate changes in dust deposition. At all sites, lithogenic fluxes were greater during the LGM compared to the Holocene. The positive temporal correlation between the Antarctic dust record and lithogenic flux at a site in the Tasman Sea shows that regionally, increased dust deposition contributed to the high glacial lithogenic fluxes. Additionally, it is inferred that lithogenic material from erosion and glacier melting deposited on the Campbell Plateau during the deglaciation (18-12 ka). From these observations, it is proposed that even though increased glacial dust deposition may have relieved iron limitation within the SAZ around New Zealand, the availability of silicic acid limited diatom growth and thus any resultant increase in carbon export during the LGM. Therefore, silicic acid concentrations have remained low since the LGM. This result suggests that both silicic acid and iron co-limit EP in the SAZ around New Zealand, consistent with modern process studies.
    Keywords: 90-593; Accumulation rate, sediment, mean per year; Accumulation rate, sediment, standard deviation; AGE; Calcium carbonate; Calculated; Carbon, organic, total; Core; CORE; Date/Time of event; DEPTH, sediment/rock; DRILL; Drilling/drill rig; Elevation of event; Event label; GC; Glomar Challenger; Gravity corer; Iron; KAL; Kasten corer; Latitude of event; Leg90; Lithogenic material; Longitude of event; Opal, biogenic silica; SO136; SO136_038GC-6; Sonne; South Pacific; South Pacific/Tasman Sea/PLATEAU; T3034_Y9; TAN0803; TAN0803-09; TAN3034; Tangaroa; TASQWA; Thorium-230; Thorium-230, standard deviation; Thorium-230 excess, decay-corrected; Thorium-230 excess, decay-corrected, standard deviation; Thorium-232; Thorium-232, standard deviation; Uranium-238; Uranium-238, standard deviation
    Type: Dataset
    Format: text/tab-separated-values, 881 data points
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 1526-1532 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interest in InSb and InSb-based heterostructures has recently been renewed in view of their important potential applications in infrared, logic, and novel quantum-well devices. Our work to date has concentrated on the growth of CdTe/InSb multilayer structures in which the properties of the InSb constituent layers have a very significant influence on subsequent device performance. The present paper describes data obtained during a systematic investigation of the growth, using molecular-beam epitaxy (MBE), of (100) InSb homoepitaxial layers, specifically for CdTe/InSb device applications. Modulated-beam mass spectrometry experiments have shown that polycrystalline InSb can be used as an MBE source of antimony, and the properties of InSb epilayers grown using either elemental antimony or polycrystalline InSb as the group-V source are compared. Cross-sectional transmission electron microscope analysis indicates that very high structural quality layers can be produced and has also identified the mechanisms which give rise to structural breakdown in layers grown under nonoptimum conditions. All unintentionally doped InSb layers grown to date have exhibited n-type conductivity (n(approximately-greater-than)3×1015 cm−3) and secondary ion mass spectrometry data has indicated the presence of tellurium, sulfur, and selenium contamination. The mechanisms by which tellurium and sulfur become incorporated in the grown layers are identified.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1189-1191 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Molecular beam epitaxy has been used to grow thin (0.5 μm〈t〈10 μm) InSb epilayers on (100) GaAs substrates. Reflection high-energy electron diffraction studies indicate that the early stages of layer growth involve three-dimensional nucleation and the formation of a nonpseudomorphic structure. High-resolution electron microscopy studies of the interface are reported for the first time and directly confirm that the large lattice mismatch (14.6% at room temperature) is accommodated by the generation of misfit dislocations. Nevertheless, the structural quality of the InSb is observed to improve dramatically with increasing thickness. Detailed secondary-ion mass spectrometry measurements also demonstrate that there is no large-scale interdiffusion of constituent elements at the interface. Finally, electrical measurements show the InSb to be p type and comparable with homoepitaxial material.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1136-1138 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the negative luminescent properties of a HgCdTe device, fabricated from a 1 mm diameter array of photodiodes having peak emission at a wavelength of 8.5 μm. This long-wavelength luminescence is of sufficient efficiency and area to be useful in device applications. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 931-933 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Stimulated emission at 5.1 μm was demonstrated from a broad area In1−xAlxSb/InSb heterostructure diode laser grown by molecular beam epitaxy. For a 5 μs pulse and a 500 Hz repetition rate the threshold current density was 1480 A cm−2 at 77 K and the maximum operating temperature was 90 K at a current density of 2680 A cm−2. Maximum peak power output was estimated to be 28 mW per facet at 77 K and 4500 A cm−2.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2314-2316 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Room-temperature electroluminescence at peak wavelengths of 5–7 μm has been observed in metalorganic vapor phase epitaxy-grown mercury cadmium telluride, fully impurity doped, heterostructure, mesa diodes. The internal quantum efficiency at low injection for 5 μm emission is around 4×10−4. Maximum output power at 295 K is 6 nW from an 80 μm diameter device (120 μW cm−2) at 50% duty cycle. The dependence of intensity on current, the emission spectra, and an infrared microscope image of the emission are presented. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 481-483 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InSb enhancement-mode, metal-insulator-semiconductor, field-effect transistors with 1 μm gate lengths have been fabricated. When operated at room temperature with less than 0.5 V applied between the source and drain, the transistors have a static dynamic range in excess of 20 dB, a cut-off frequency (fT) of 14 GHz and a transconductance, at 1 GHz, of 230 mS mm−1. Analysis of the parasitic capacitances indicates an intrinsic fT of about 90 GHz. The static electron mobility in the channel is 2×104 cm2 V−1 s−1, so a carrier velocity of about 3.7×107 cm s−1 should be attained. This leads to a predicted frequency response of 84 GHz, in reasonable agreement with the intrinsic microwave data.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2433-2435 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using heterostructures of InSb/In1−xAlxSb, grown by molecular beam epitaxy, diodes have been fabricated which emit at room temperature with a peak wavelength in the range 5.5–5.8 μm and an internal efficiency of 0.2%.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1761-1763 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InSb and related narrow-gap alloys have many potential applications in addition to the conventional one of infrared detection, provided that ambient temperature operation can be achieved. We report experimental results on multilayer InSb/In1−xAlxSb structures utilizing minority-carrier exclusion and extraction. At room temperature, diodes have R0A values several orders higher than homostructure InSb devices. Negative differential resistance associated with Auger suppression is observed under reverse bias. Enhancement-mode metal-insulator-semiconductor field-effect transistors have near classical output characteristics at 294 K, with a typical transconductance of 34 mS/mm and dynamic range of 23 dB.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Annals of the New York Academy of Sciences 724 (1994), S. 0 
    ISSN: 1749-6632
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Natural Sciences in General
    Type of Medium: Electronic Resource
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