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  • 1
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper describes a new approach for producing epitaxial Fe overlayers on GaAs(100), which prevents the intermixing of the semiconductor elements in the overlayer. This is accomplished by sulphur passivation of the substrate surfaces in an aqueous ammonium sulphide solution prior to Fe deposition. bcc Fe(100) is observed to grow epitaxially on S/GaAs(100) substrates, with most of the S floating out as an ordered overlayer. No evidence of semiconductor interdiffusion into the Fe overlayer is observed. The Fe overlayers are observed to be ferromagnetic, with easy axes along the [010] directions. A uniaxial in-plane anisotropy is observed, in addition to the expected fourfold anisotropy, which is attributed to the bonding geometry at the interface. The saturation magnetization of these overlayers is found to be close to that of bulk Fe. © 1996 American Institute of Physics.
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5641-5643 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of Fe on Ge(100) surfaces results in the intermixing of Ge with the Fe overlayer, producing relatively thick magnetic dead layers. In this paper we describe a new technique, the growth of Fe overlayers on S-passivated Ge(100), which successfully prevents the intermixing of Ge with the Fe overlayer. Bcc Fe(100) is observed to grow epitaxially on this substrate, with the S floating out as an ordered overlayer. The S prevents intermixing by acting as a surfactant, holding the Fe on top of the substrate and preventing interdiffusion. The Fe overlayers are observed to be ferromagnetic in nature, displaying sharp hysteresis loops with easy axes along the Fe[010] directions. A uniaxial in-plane anisotropy is observed, which results in the two easy axes being inequivalent. © 1996 American Institute of Physics.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5795-5799 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrodeposited magnetic Ni-Fe films are used in storage devices and are applicable as magnetic sensors. In this work, we demonstrate the electrochemical conditions for deposition of permalloy Ni-Fe nanocrystalline films onto InP(100) surfaces. The prepared Ni-Fe films were analyzed by scanning electron microscopy to determine surface morphology and by Auger electron spectroscopy for compositional depth profiling. Permalloy films with bulk composition of 81% Ni and 18% Fe were obtained by electrodeposition at −1.2 V (versus standard calomel electrode) in a bath of 0.5 M NiSO4, 0.02 M FeSO4, 0.4 M H3BO3, pH=3. Transmission electron microscopy measurements show that these films consist of fcc Ni-Fe nanocrystallites embedded in an amorphous matrix. The films also show good magnetic hysteresis loops, with low coercivity. The magnetic properties of these films are improved by an extended anneal at 100 °C. Interdiffusion occurred between Ni-Fe and the InP substrate after the sample was heated to 300 °C, and consequently a loss of ferromagnetic behavior was observed. © 1995 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 4924-4926 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This investigation has examined the use of the laminated antiferromagnet PtMn/IrMn to exchange bias spin valves in an attempt to combine the high exchange field and blocking temperature of PtMn with the good pinning profile of IrMn. The effect of varying the IrMn thickness was examined for top and bottom spin values exchange biased by CoFe20Å/IrMn/PtMn. For top spin valves, Hex rapidly decreases as IrMn thickness is increased, with the exchange pinning virtually disappearing by 20 Å. As the thickness continues to increase the pinning reappears, and by 40 Å of IrMn an exchange field of 500 Oe and coercivity of 100 Oe are observed. This exchange field is slightly higher than that observed for CoFe/IrMn40 spin valves (400 Oe as deposited, 470 Oe after annealing). For bottom spin valves the same trends are observed, although the pinning never completely disappears. Also, the exchange field of 600 Oe is lower than that obtained for IrMn (670 Oe), presumably due to the rougher interface of the PtMn underlayer. For both top and bottom spin valves the laminated antiferromagnet showed improvement in thermal stability compared to as deposited and annealed IrMn spin valves. © 2000 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 5726-5728 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This investigation focused on how spin-valve thermal stability is related to different antiferromagnetic materials: FeMn, IrMn, NiMn, PtMn, and PtPdMn. Measurements of the spin-valve exchange biasing field versus temperature show the following relationship in blocking temperatures: FeMn〈IrMn〈PtPdMn〈PtMn〈NiMn. Looking at the blocking temperature distributions, both FeMn and IrMn show sharp peaks, but at low temperatures (∼110 °C). In the case of the other materials, the distribution peaks at much higher temperature (〉250 °C), but are broader. Pinned angle rotation and giant magnetoresistance versus temperature measurements give the same thermal stability hierarchy, as well as providing information about interdiffusion in these spin-valves. For comparison, synthetic antiferromagnet spin-valves (based on IrMn and PtMn) were also measured. The synthetic structures did not show significantly different blocking temperatures or giant magnetoresistance temperature dependence than standard spin-valves. However, blocking temperature distribution and pinned layer rotation measurements showed improved stability for the synthetic structures, which may be attributed to the very thin effective pinned layer which results in high exchange biasing fields in these structures. © 2000 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 5528-5530 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spin-valve (SV) films Si(100)/Ta30/NiFe50/CoFe20/Cu26/CoFe23/Ru7/CoFe20/IrMn50/Ta30 (in Å) exhibit a room temperature (RT) giant magnetoresitance (GMR) ratio of 8.5% with an effective exchange pinning field (Heex) of ∼1.3 kOe and an antiferromagnetic (AF) saturation field (Hs) of ∼6.0 kOe. The synthetic spin valve shows a GMR ratio of 5.0% at 150 °C with Heex〉500 Oe, while a conventional spin valve [Si(100)/Ta50/NiFe50/CoFe20/Cu28/CoFe22/IrMn50/Ta50 in Å] has a GMR ratio of 5.0% with Hex〈200 Oe. The synthetic sample also showed a superior thermal stability with a RT GMR value of 6.9% (compared to 6.1% for conventional sample) after an anneal at 250 °C for 10 h. Shielded narrow track synthetic SV readers demonstrated high amplitude, large dynamic range, and excellent magnetic stability, indicating extendibility for ultrahigh density read head applications. © 1999 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of the American Chemical Society 69 (1947), S. 1549-1549 
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
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  • 8
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of the American Chemical Society 70 (1948), S. 2607-2608 
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1123-1125 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The treatment of Ge(100) in an aqueous ammonium sulfide solution is investigated by means of x-ray photoelectron spectroscopy, Auger electron spectroscopy, low-energy electron diffraction, scanning electron microscopy, and atomic force microscopy. This treatment is shown to produce an S-passivated Ge(100)-(1×1) surface, where the S atoms appear to be bridge bonded to the Ge atoms. Desorption of the S is observed to occur between 460 and 750 K and results in a Ge(100)-(1×1) surface with a surface morphology similar to that of the initial sample. © 1995 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 171-173 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Auger electron spectroscopy, low-energy electron diffraction, thermal desorption spectroscopy, and scanning electron microscopy have been utilized to investigate the thermal stability of S-passivated InP(100). S-passivated InP(100) is shown to be thermally stable up to ∼730 K, where S removal and sample evaporation begins. This evaporation results in the formation of a roughened, but clean, InP(100) surface, showing the characteristic (4×2) reconstruction.
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