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  • 1
    Electronic Resource
    Electronic Resource
    Raman-microprobe study of stress and crystal orientation in laser-crystallized silicon (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3387-3389 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The spatial variation of stress and crystal orientation in laser-crystallized silicon-on-insulator films has been determined using the Raman-microprobe technique. The spatial resolution achieved is better than 1 μm. The phonon shift relative to unstressed silicon is in the range of −1.5 cm−1 which corresponds to a tensile stress of 380 MPa and is in good agreement with theoretical analysis. Using a laser plasma line as an online reference, the peak position of the phonon signal has been measured with a resolution better than ±0.02 cm−1. Our results also show a 4°-backward tilt of the crystal orientation along a crystallization path length of 90 μm. This has been determined using a new polarization sensitive intensity-monitoring method on cross-cut specimens which features an angular resolution of ±1° independent of surface roughness.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348516
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  • 2
    Electronic Resource
    Electronic Resource
    Comparison of P and Sb as n-dopants for Si molecular beam epitaxy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 937-940 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The incorporation properties segregation, activation, and desorption in Si molecular beam epitaxy of phosphorus (P) are investigated experimentally in comparison to antimony (Sb) over a temperature range from 300 to 900 °C with Secondary Ion Mass Spectroscopy and electrochemical Capacitance/Voltage measurements. P exhibits superior properties over the full temperature range. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360286
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  • 3
    Electronic Resource
    Electronic Resource
    Field-effect induced electron channels in a Si/Si0.7Ge0.3 heterostructure (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3917-3919 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Size effects in field-effect induced wires imposed upon a high-mobility Si/Si0.7Ge0.3 heterostructure were studied by magnetotransport. Spatial separation of the electron channels was accomplished by means of a periodically modulated Schottky gate. The magnetoresistance parallel to the wires shows a well-pronounced peak at magnetic fields 〈0.3 T at a gate bias ≤0 V. This maximum results from diffuse boundary scattering and proves the existence of spatially separated electron channels. From its position wire widths varying from 0.14 to 0.28 μm can be estimated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357401
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  • 4
    Electronic Resource
    Electronic Resource
    Fabrication of lateral npn- and pnp-structures on Si/SiGe by focused laser beam writing and their application as photodetectors (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 6455-6460 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Local doping with focused laser beam writing was used to fabricate lateral npn- and pnp-structures on modulation-doped Si/SiGe heterostructures. The electrical and optical properties of the achieved lateral potential modulation were analyzed for local B-doping on n-type Si/SiGe and P- and Sb-doping on p-type SiGe/Si. Focused laser beam written doped lines show a strongly nonohmic IV characteristic indicating the formation of a local insulating barrier in the two-dimensional carrier system. Such lateral structures can be used as photosensitive devices with responsivities up to 106 A/W combined with a spatial resolution on the μm scale. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364428
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  • 5
    Electronic Resource
    Electronic Resource
    Single-crystal Sn/Ge superlattices on Ge substrates: Growth and structural properties (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 875-877 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Short-period strained-layer α-Sn/Ge superlattices lattice matched to Ge(001) substrates have been synthesized for the first time. The thin, tetragonally distorted α-Sn layers are stabilized by a modified molecular beam epitaxy technique with large modulation of substrate temperature during growth. Optimization of growth conditions is achieved via in situ Auger electron spectroscopy and low-energy electron diffraction. This new kind of strained-layer superlattice is characterized by transmission electron microscopy, x-ray diffraction, and Raman scattering. Distinct superlattice effects are observed in the structural and phonon properties of the samples.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104264
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  • 6
    Electronic Resource
    Electronic Resource
    Reduction of mirror temperature in GaAs/AlGaAs quantum well laser diodes with segmented contacts (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1007-1009 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A serious problem of high-power GaAs/AlGaAs laser diodes is the strong mirror heating, which is caused by the carrier density and the correlated nonradiative surface recombination at the cleaved mirrors. Therefore the top electrode was segmented in three parts and the influence of a separate controllable potential in the mirror region on the temperature has been studied. The local temperature was measured using spatially resolved Raman scattering. A substantial reduction of the mirror temperature is possible by applying a suitable potential to the mirror contacts. This may lead to an improvement in reliability in the case where the high mirror temperature is responsible for the degradation of the laser.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104406
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  • 7
    Electronic Resource
    Electronic Resource
    Pauli-blocking imaging of single strain-induced semiconductor quantum dots (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3200-3202 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoluminescence (PL) of InP strained-induced quantum dots in a GaInAs/GaAs quantum well is measured at low temperature (4.2 K) using near-field scanning optical microscopy. The PL originating from the first three confined levels of eight individual dots is mapped out over an area of 1.4×1.4 μm. The spatial resolution of the PL of the lowest energy level is found to be limited to about 0.5 μm. In contrast, the mapping of the PL of the higher excited state shows a much improved spatial resolution of the order of 150 nm which is the instrument resolution. This effect is understood in terms of Pauli-blocking of the dot level filling. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124116
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  • 8
    Electronic Resource
    Electronic Resource
    Influence of germanium content on the photoluminescence of erbium- and oxygen-doped SiGe grown by molecular beam epitaxy (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3129-3131 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoluminescence at 1.54 μm of erbium- and oxygen-doped Si/Si1−xGex samples grown completely by molecular beam epitaxy has been investigated for germanium concentrations ranging from x=0 to x=0.165. The dopants were either placed into the Si1−xGex or into the Si layers of an alternating Si/Si1−xGex layer structure. Because of the good crystal quality after growth, it was possible to obtain all luminescence data from as-grown samples without annealing. We observed a decrease in photoluminescence (PL) intensity and a stronger temperature dependence with increasing Ge content. For samples with the same Si/Si1−xGex layer structure, an enhancement of PL intensity at low temperature was seen when erbium and oxygen were placed into the Si1−xGex layers rather than into the Si layers. We attribute this effect to a capture of photogenerated carriers in the Si1−xGex layers. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120267
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  • 9
    Electronic Resource
    Electronic Resource
    Franz–Keldysh effect in lateral GaAs/AlGaAs based npn structures (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2876-2878 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lateral npn structures, fabricated by focused laser beam-induced doping, combine large potential modulations with a small width of the p-doped regions. This results in strong lateral electric fields, which can be tuned by applying a bias voltage. Photon absorption for energies below the band gap is allowed due to the Franz–Keldysh effect. We estimate the value of the electric fields by analyzing wavelength-dependent photocurrent measurements. The fields are comparable to attainable fields in existing vertical modulator structures. The spatially resolved photocurrent measurements reveal the location of the highest lateral electric field, which is at the edges of the p-doped region. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119204
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  • 10
    Electronic Resource
    Electronic Resource
    Influence of the erbium and oxygen content on the electroluminescence of epitaxially grown erbium-doped silicon diodes (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2431-2433 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electroluminescence behavior of erbium-oxygen-doped silicon light emitting diodes grown by molecular beam epitaxy was studied for a fixed oxygen to erbium concentration ratio of about six. The diodes were operated in reverse bias. An increase of the erbium and oxygen content leads to a stronger erbium intensity at 5 K up to an erbium concentration of 1.5×1020 cm−3, an enhanced decrease of the erbium intensity with higher temperatures, and a shift of the temperature quenching onset to lower temperatures. The strongest erbium electroluminescence emission in reverse bias in this set of samples was obtained from annealed Si:Er-diodes doped with concentrations of 5×1019, or 1.5×1020 cm−3 erbium and 3×1020 or 3×1021 cm−3 oxygen, respectively. Electroluminescence emission due to erbium was detected up to 440 K. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118893
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