ISSN:
1090-6533
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Abstract An investigation was made of the formation of antiphase boundaries in a GaAs/Ge/GaAs(001) system using accurately oriented substrates and substrates misoriented by 3° and 5° in the [110] direction. It was shown that growth of germanium on a misoriented gallium arsenide surface leads to the formation of diatomic steps of height a 0/2 and therefore results in the absence of any antiphase boundaries in a GaAs film grown on this surface. Conditions required to obtain a vicinal Ge surface consisting of monatomic steps of height a 0/4, whose presence leads to the formation of antiphase boundaries during GaAs growth, are determined.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1262328
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