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Influence of the step height of the vicinal surface of germanium on the formation of antiphase boundaries in a gallium-arsenide-germanium-gallium-arsenide(001) system

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Abstract

An investigation was made of the formation of antiphase boundaries in a GaAs/Ge/GaAs(001) system using accurately oriented substrates and substrates misoriented by 3° and 5° in the [110] direction. It was shown that growth of germanium on a misoriented gallium arsenide surface leads to the formation of diatomic steps of height a 0/2 and therefore results in the absence of any antiphase boundaries in a GaAs film grown on this surface. Conditions required to obtain a vicinal Ge surface consisting of monatomic steps of height a 0/4, whose presence leads to the formation of antiphase boundaries during GaAs growth, are determined.

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Authors and Affiliations

  1. Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, Novosibirsk

    A. K. Gutakovskii, A. V. Katkov, M. I. Katkov, O. P. Pchelyakov & M. A. Revenko

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  1. A. K. Gutakovskii
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  2. A. V. Katkov
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  3. M. I. Katkov
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  4. O. P. Pchelyakov
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  5. M. A. Revenko
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Pis’ma Zh. Tekh. Fiz. 24, 7–12 (December 26, 1998)

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Gutakovskii, A.K., Katkov, A.V., Katkov, M.I. et al. Influence of the step height of the vicinal surface of germanium on the formation of antiphase boundaries in a gallium-arsenide-germanium-gallium-arsenide(001) system. Tech. Phys. Lett. 24, 949–951 (1998). https://doi.org/10.1134/1.1262328

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  • DOI: https://doi.org/10.1134/1.1262328

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