Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
68 (1990), S. 1714-1719
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Transport characteristics of N-ZnS are calculated by solving the Boltzmann transport equation using a variational method (including all major scattering mechanisms and screening). The dependence of electron mobility on carrier concentration, for a range of compensation ratio and ionized impurity concentration, are given at both 300 and 77 K. This provides a rapid means for determining material quality. Mobility limits of 230 cm2/V s (n∼1019 cm−3) and over 3000 cm2/V s (n〈1014 cm−3) are calculated at 300 and 77 K, respectively. The temperature dependence of the mobility is calculated and agrees favorably with experimental data.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.346599
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