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  • 1
    Electronic Resource
    Electronic Resource
    Modification of intrinsic strain at lattice-matched GaInAs/InP interfaces (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 910-912 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have demonstrated, by high-resolution x-ray diffraction, the presence of strained regions on the scale of about one molecular layer at each interface in lattice-matched GaInAs/InP superlattices grown by gas source molecular beam epitaxy. The existence of these interfacial regions results only from the different group V element in each interface layer of the superlattice and the lack of any significant diffusion between atomic planes during, or subsequent to epitaxy. We have demonstrated that the intrinsic strain at the interfaces of lattice-matched GaInAs/InP superlattices can be modified on the same near molecular layer scale by altering the beam sequence during growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102625
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  • 2
    Electronic Resource
    Electronic Resource
    Intrinsic strain at lattice-matched Ga0.47In0.53As/InP interfaces as studied with high-resolution x-ray diffraction (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1920-1922 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-resolution x-ray studies of Ga0.47In0.53As/InP superlattices reveal, for the first time, the presence of an intrinsic interfacial strain at heteroepitaxial interfaces. This strain is produced by an asymmetric ordering of the atomic layers in the leading and trailing interfaces of each quantum well as the result of the normal growth sequence during gas source molecular beam epitaxy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100345
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  • 3
    Electronic Resource
    Electronic Resource
    Kinematical simulation of high-resolution x-ray diffraction curves of GexSi1−x/Si strained-layer superlattices: A structural assessment (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1152-1154 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-resolution x-ray diffraction (HRXRD) measurements of GexSi1−x/Si strained-layer superlattices are carried out using a four-crystal monochromator. A wide asymmetric range of extremely sharp higher order x-ray satellite peaks is observed indicating a well-defined strained-layer superlattice with abrupt interfaces. This is further confirmed by cross-section transmission electron microscopy. Using a kinematical diffraction step model which assumes ideally sharp interfaces, the thickness, strain, and composition of the GexSi1−x well could be extracted. Excellent agreement between measured and simulated x-ray satellite patterns is achieved. These results show that HRXRD together with kinematical simulation provides a powerful tool to evaluate the structural perfection of GexSi1−x/Si strained-layer superlattices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99189
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  • 4
    Electronic Resource
    Electronic Resource
    Critical layer thickness in strained Ga1−xInxAs/InP quantum wells (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1668-1670 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We use a combination of electrical, optical, and structural characterization techniques to determine the critical layer thickness of strained Ga1−xInxAs/InP quantum wells. Well compositions covering the entire range of strain available, from −3.8% (GaAs) to +3.2% (InAs), were investigated. We find that the critical layer thickness in this material system is unambiguously described by the classical Matthews and Blakeslee force balance model [J. Cryst. Growth 27, 118 (1974)]. Reverse leakage current of strained-well samples grown in a p-i-n configuration is shown to be the most direct and reliable measure of the pseudomorphic limit.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102231
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  • 5
    Electronic Resource
    Electronic Resource
    Admittance spectroscopy measurement of band offsets in strained layers of InxGa1−xAs grown on InP (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 739-741 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report measurements of the conduction-band offset in strained-layer superlattices of InxGa1−xAs/InP. Admittance spectroscopy was used to measure the activation energy for thermionic emission of electrons over InP barriers in n-type superlattices. Superlattice dimensions and x values were obtained from high-resolution x-ray diffraction and transmission electron microscopy studies. For x=0.37, 0.53, and 0.69, the values obtained for the conduction-band offset are 175±25 meV, 210±20 meV, and 315±25 meV, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100878
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  • 6
    Electronic Resource
    Electronic Resource
    Electrical transport and in situ x-ray studies of the formation of TiSi2 thin films on Si (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1100-1102 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The formation of TiSi2 thin films on Si has been investigated by in situ x-ray diffraction and electrical transport. The x-ray results show unequivocally that the staging proceeds through two orthorhombic polytypes of TiSi2 according to the sequence: sputter-deposited metallic Ti or TiSix alloy films on Si(001)→TiSi2 (C49 structure)→TiSi2 (C54 structure), with no evidence of lower silicides. Electrical transport shows metallic behavior for all phases and distinctive features in the annealing curves which correlate with the structural transformations. Most important, the resistivity, characteristically very high for the C49 phase, undergoes a precipitous drop at the C49→C54 transition. In the C54 phase when fully annealed the resistivity is 12.4 μΩ cm at room temperature and 0.66 μΩ cm at 4.2 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98753
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  • 7
    Electronic Resource
    Electronic Resource
    High-resolution x-ray diffraction studies of InGaAs(P)/InP superlattices grown by gas-source molecular-beam epitaxy (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1278-1283 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-resolution x-ray diffraction studies have been carried out to determine the structural perfection and periodicity for a number of high-quality InGaAs/InP superlattices and one InGaAsP/InP superlattice grown by gas-source molecular-beam epitaxy. For comparison, high-resolution diffraction both with a three-crystal geometry and with a four-crystal monochromator was used along with conventional double-crystal x-ray diffractometry. The best resolution in the x-ray satellite patterns was obtained with the four-crystal monochromator, providing a resolution of one molecular layer in the periodicity of the superlattice. The presence of sharp satellite reflections in the x-ray diffraction profiles demonstrate smooth interfaces with well-defined modulated structures which could be derived from a kinematical diffraction step model. For some superlattices, excellent agreement between the step model and the measurements is obtained when the model assumes that each period consists only of the well and the barrier with ideally sharp interfaces. For other superlattices a thin strained layer had to be assumed on either one or both sides of each quantum well. The comparison of these structures demonstrates the extreme sensitivity of the high-resolution method in conjunction with the step model, to study very small modifications in superlattice periodicities.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339681
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  • 8
    Electronic Resource
    Electronic Resource
    Optical transitions in strained In1−xGaxAsyP1−y quantum wells clad by lattice-matched barriers of InGaAsP (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1689-1691 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We extend the deformation potential model developed previously for InGaAs/InP quantum wells to include strained quaternary wells, under compressive or tensile strain, and lattice-matched (or also strained) quaternary barriers. This requires interpolation of the needed quaternary materials parameters in a plane bound by the four binary parent compounds. The calculated energies of heavy and light hole transitions are compared to measured values obtained on a set of compressively strained multi-quantum-well quaternary structures grown on (100) InP with the lattice mismatch strain Δa/a as large as 0.75%. Our experimental results are in good agreement with the extended model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112887
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  • 9
    Electronic Resource
    Electronic Resource
    Misfit dislocation microstructure and kinetics for InxGa1−xAs/InP(100) and (110) interfaces under tensile and compressive stress (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1504-1506 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Misfit dislocation microstructures and strain relaxation kinetics are studied for 1% lattice mismatched (100) and (110) interfaces under tensile and compressive stress in the InxGa1−xAs/InP system. Misfit dislocations are observed to be either 60° a/2〈101〉 total [for (100) compressive and (110) tensile configurations] or 90° a/6〈112〉 partial [dominant for (100) tensile and (110) compressive configurations] types. Relaxation kinetics are observed to be substantially faster for 90° a/6〈112〉 than 60° a/2〈101〉 dislocations. This produces significantly different relaxation rates for (100) versus (110) interfaces and compressive versus tensile stress. The relaxation is also found to be an extremely strong function of excess stress, with an increase of about two orders of magnitude of dislocation density per 100 MPa increase in excess stress for interfacial dislocation densities in the range 102–106 cm−1.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109670
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  • 10
    Electronic Resource
    Electronic Resource
    Metalorganic molecular beam epitaxy of 1.3 μm quaternary layers and heterostructure lasers (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1893-1895 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metalorganic molecular beam epitaxy of InGaAsP quaternary layers with the composition corresponding to the band gap at 1.3 μm has been investigated for growth temperatures ranging from 485 °C to 530 °C. From the x-ray diffraction and room temperature photoluminescence measurements Ga incorporation was found to be extremely growth temperature dependent. Photoluminescence linewidths increased rapidly for a negative lattice mismatch exceeding the critical value, whereas for positive mismatch no such broadening was observed. For lattice matched layers linewidths were broader for the higher growth temperatures. Threshold current densities ranging from 0.7 to 2.0 kA/cm2 were measured for conventional and multi-quantum-well broad area lasers with the active layers based on the 1.3 μm quaternary.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106180
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