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  • 21
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    Electrical and Structural Characterization of Web Dendrite Crystals (1984)
    In:  CASI
    Details
    Publication Date: 2014-09-12
    Description: Minority carrier lifetime distributions in silicon web dendrites are measured. Emphasis is placed on measuring areal homogeneity of lifetime, show its dependancy on structural defects, and its unique change during hot processing. The internal gettering action of defect layers present in web crystals and their relation to minority carrier lifetime distributions is discussed. Minority carrier lifetime maps of web dendrites obtained before and after high temperature heat treatment are compared to similar maps obtained from 100 mm diameter Czochralski silicon wafers. Such maps indicate similar or superior areal homogeneity of minority carrier lifetime in webs.
    Keywords: SOLID-STATE PHYSICS
    Type: JPL Proc. of the Flat-Plate Solar Array Proj. Res. Forum on the High-Speed Growth and Characterization of Crystals for Solar Cells; p 565-574
    Format: text
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    NASA TECHNICAL REPORTS
  • 22
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    Electrical and Structural Characterization of Web Dendrite Crystals (1985)
    In:  CASI
    Details
    Publication Date: 2016-06-07
    Description: Minority carrier lifetime distributions in silicon web dendrites are measured. Emphasis is placed on measuring areal homogeneity of lifetime, show its dependency on structural defects, and its unique change during hot processing. The internal gettering action of defect layers present in web crystals and their relation to minority carrier lifetime distributions is discussed. Minority carrier lifetime maps of web dendrites obtained before and after high temperature heat treatment are compared to similar maps obtained from 100 mm diameter Czochralski silicon wafers. Such maps indicate similar or superior areal homogeneity of minority carrier lifetime in webs.
    Keywords: INORGANIC AND PHYSICAL CHEMISTRY
    Type: Proc. of the Flat-Plate Solar Array Proj. Res. Forum on High-Efficiency Crystalline Silicon Solar Cells; p 279-297
    Format: application/pdf
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  • 23
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    Low cost silicon solar arrays (1975)
    In:  CASI
    Details
    Publication Date: 2016-06-07
    Description: Continuous growth methodology for silicon solar cell ribbons deals with capillary effects, die effects, thermal effects and crystal shape effects. Emphasis centers on the shape of the meniscus at the ribbon edge as a factor contributing to ribbon quality with respect to defect densities. Structural and electrical characteristics of edge defined, film-fed grown silicon ribbons are elaborated. Ribbon crystal solar cells produce AMO efficiencies of 6 to 10%.
    Keywords: ENERGY PRODUCTION AND CONVERSION
    Type: Proc. of the 1st ERDA Semiann. Solar Photovoltaic Conversion Program Conf.; p 104-171
    Format: application/pdf
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    NASA TECHNICAL REPORTS
  • 24
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    Activated Internal Gettering (1985)
    In:  Other Sources
    Details
    Publication Date: 2019-06-28
    Description: Lifetimes of minority carriers in silicon webs improved by annealing. Heat treatment of silicon web ribbons considerably improves efficiency of solar cells.
    Keywords: MATERIALS
    Type: NPO-15530 , NASA Tech Briefs (ISSN 0145-319X); 8; 4; P. 499
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  • 25
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    Method of increasing minority carrier lifetime in silicon web or the like (1983)
    In:  CASI
    Details
    Publication Date: 2019-06-28
    Description: A silicon dendrite is grown as a ribbon forming two silicon crystal layers which are separated by an interface layer which contains a large number of defects. Significant increase of minority carrier lifetime with homogeneous distribution at the outer surfaces of the two silicon crystal layers is achieved by processing the web in an atmosphere of a selected gas, e.g., oxygen, nitrogen or an inert gas, for about 30 minutes to several hours at a temperature preferably on the order of 900 to 1200 C.
    Keywords: SOLID-STATE PHYSICS
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  • 26
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    Inexpensive silicon sheets for solar cells (1977)
    In:  Other Sources
    Details
    Publication Date: 2019-06-28
    Description: Technique of producing silicon sheets by drawing gridlike or porous graphite gauze through silicon melt is readily adaptable to mass production, making process applicable to inexpensive manufacture of solar cell arrays.
    Keywords: ELECTRONIC COMPONENTS AND CIRCUITS
    Type: NPO-14069 , NASA Tech Briefs (ISSN 0145-319X); 2; 4; P. 3
    Format: text
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  • 27
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    Growth of silicon carbide crystals on a seed while pulling silicon crystals from a melt (1979)
    In:  CASI
    Details
    Publication Date: 2019-06-27
    Description: A saturated solution of silicon and an element such as carbon having a segregation coefficient less than unity is formed by placing a solid piece of carbon in a body of molten silicon having a temperature differential decreasing toward the surface. A silicon carbide seed crystal is disposed on a holder beneath the surface of the molten silicon. As a rod or ribbon of silicon is slowly pulled from the melt, a supersaturated solution of carbon in silicon is formed in the vicinity of the seed crystal. Excess carbon is emitted from the solution in the form of silicon carbide which crystallizes on the seed crystal held in the cool region of the melt.
    Keywords: SOLID-STATE PHYSICS
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  • 28
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    Silicon-Film Growth by Continuous Edge-Supported Melt Skimming (1984)
    In:  Other Sources
    Details
    Publication Date: 2019-06-28
    Description: Proposed technique grows thin sheets of silicon at high speeds with minimal contamination. Films grown in novel and continuous manner without presence of substrate.
    Keywords: FABRICATION TECHNOLOGY
    Type: NPO-15532 , NASA Tech Briefs (ISSN 0145-319X); 8; 2; P. 292
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  • 29
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    Oscillating-Crucible Technique for Silicon Growth (1984)
    In:  Other Sources
    Details
    Publication Date: 2019-06-28
    Description: Technique yields better mixing of impurities and superior qualiity crystals. Accellerated motion stirs melt which reduces temperature gradients and decreases boundary layer for diffusion of impurities near growing surface. Results better mixing of impurities into melt, decrease in tendency for dendritic growth or cellular growth and crystals with low dislocation density. Applied with success to solution growth and Czochralski growth, resulting in large crystals of superior quality.
    Keywords: FABRICATION TECHNOLOGY
    Type: NPO-15938 , NASA Tech Briefs (ISSN 0145-319X); 8; 1; P. 127
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  • 30
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    Silicon ribbon growth by a capillary action shaping technique (1976)
    In:  CASI
    Details
    Publication Date: 2019-06-27
    Description: The technique of silicon ribbon growth by the capillary action shaping is assessed for applicability to photovoltaic power device material. Ribbons 25 mm in width and up to 0.5 m in length have been grown from SiC dies, and some new characteristics of growth from such dies have been identified. Thermal modifiers have been studied, and systems were developed which reduce the frozen-in stress un silicon ribbons and improve the thickness uniformity of the ribbons. Preliminary spreading resistance measurements indicate that neither surface striations nor twin boundaries give rise to appreciable resistivity variations, but that large-angle grain boundaries cause local resistivity increases of up to 200%.
    Keywords: SOLID-STATE PHYSICS
    Type: NASA-CR-149815 , QPR-3
    Format: application/pdf
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