ISSN:
1063-7826
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract Multiphonon field-assisted thermal capture of thermally equilibrium charge carriers by deep-level centers located in a depletion region of a semiconductor is analyzed. It is shown that, in the case of strong electron-phonon coupling (SEPC), the multiphonon capture with preliminary tunneling of an electron through a potential barrier in the depletion region occurs with a lower rate as compared to the direct multiphonon capture in the electrically neutral bulk of the semiconductor, whereas, in the case of weak electron-phonon coupling (WEPC), the capture rate in the depletion region of a semiconductor may exceed that in the electrically neutral bulk by several orders of magnitude. The results of experimental study of capture processes in AlGaAs doped with silicon indicate that electron-phonon coupling is strong in DX centers.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1188044
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