ISSN:
1063-7826
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract The photoeffect in a metal-insulator-semiconductor (MIS) structure that incorporated a Cd0.28Hg0.72Te compound, a low-temperature pyrolitic SiO2, and an In layer with a thickness of 500 nm and an area of 0.5×0.5 mm2 was studied. For a MIS structure with a nontransparent field electrode, the observed photoeffect consists in variation in the capacitance and high-frequency electrical conductivity of the MIS structure; this photoeffect is caused by photocarriers that are formed outside the MIS structure and reach this structure either due to diffusion or along the surface channel. This happens if the MIS structure is in the state of inversion; in this case, an eddy electric current formed crosses the induced p-n junction and closes on itself at the MIS structure periphery. It is assumed that this current and the extra voltage across the p-n junction are related by the Shockley formula. The following parameters were evaluated: the coefficient β in the Shockley formula (β characterizes the nonideality of the p-n junction); the product R 0 A of the resistance for zero bias by the area of the p-n junction; and the surface area ΔS of collection of the charge carriers. It was found that β=1.52, R 0 A=2.7×105 Ω cm2, and ΔS corresponds to a stripe that goes along the MIS-structure perimeter and has a width of 15 µm. The MIS structure studied is considered as a photodetector.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1188075
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