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  • 11
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1891-1893 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Eu is incorporated into CaF2 films grown on Si(100) by molecular beam epitaxy using elemental Eu evaporation. Eu doping as high as 4.05 at. % does not significantly degrade the surface morphology, indicating a relatively high solubility of Eu in CaF2. Photoluminescence spectra from Eu-doped CaF2 show strong blue emissions from Eu2+ ions in cubic sites. The inhomogeneous broadening of the zero-phonon line near 24 190 cm−1 is reduced by ∼20% upon in situ annealing at 1100 °C. © 1995 American Institute of Physics.
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  • 12
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 323-325 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have realized by cleaved edge overgrowth a two-dimensional electron gas system in a one-dimensional lateral superlattice consisting of 100 periods of 120 A(ring) GaAs/20 A(ring) AlGaAs. These devices exhibit nonlinear I–V, including negative differential resistance, at high electric fields. We demonstrate, by monitoring the changes in the two-dimensional electron density, that the nonlinear I–V is due to high field induced electron trapping. © 1995 American Institute of Physics.
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  • 13
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1705-1707 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used time-resolved transmission and photocurrent measurements at 1.06 μm to study carrier sweepout in strain-relaxed InGaAs/GaAs and strain-balanced InGaAs/GaAsP quantum well modulators. Our results show carrier sweepout on a picosecond time scale from both structures, in agreement with the high saturation intensities measured for these devices. Carrier escape from the InGaAs/GaAs structure is facilitated by a low band offset and occurs in tens of picoseconds even without external bias. In the InGaAs/GaAsP structure, which has a much larger band offset, resonant tunneling reduces the sweepout time from 1.8 ns at zero bias to 10 ps at −6 V.
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  • 14
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3132-3134 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We use transmission spectroscopy to determine the energy gap for the AlxIn1−xSb alloy system in the Al concentration range from 0% to 25% from cryogenic to room temperature. The samples are epitaxial layers grown by molecular beam epitaxy on GaAs substrates. Our room temperature results are compared to those from two earlier studies. In our Al concentration range, we find a linear change of energy gap with alloy lattice constant. © 1998 American Institute of Physics.
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  • 15
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 2138-2140 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Three types of defects at the surface of InSb quantum well samples are identified: hillocks, square mounds, and oriented abrupt steps. The electron mobility in the quantum well correlates to the density of abrupt features, such that samples with a high density of anisotropic defects show anisotropy in the mobility. We propose that the dominant scattering mechanism associated with these abrupt features is a fluctuation in the quantum well morphology. © 2002 American Institute of Physics.
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  • 16
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3905-3907 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We use interband exciton transitions in parabolically graded quantum wells to measure the band offset at the InSb/AlxIn1−xSb interface. The method we use is based on similar studies in the GaAs/AlxGa1−xAs system but modified to reflect the strong nonparabolicity and strain of the InSb/AlxIn1−xSb system. We find a conduction band offset ratio of 0.62±0.04 for Al concentrations in the range 2%–12%. The observed lack of variation of the offset with Al concentration suggests a lack of strain dependence in the InSb/AlxIn1−xSb system for practical Al concentrations. © 2000 American Institute of Physics.
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  • 17
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 8 (1996), S. 3057-3062 
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Simulations of a fluid rotating inside a partially open cylindrical cavity, performed by numerical solution of the unsteady axisymmetric Navier–Stokes equations, are presented. The configuration consists of a cylindrical vessel holding the fluid, which is entrained into motion by a rotating lid. This one is a coaxial disk in contact with the fluid surface but without covering it entirely. The study focuses on the occurrence of time-dependent flow, more specifically, the first transition to unsteadiness, by considering cavity cases with different amounts of free surface, for a fixed aspect ratio. By following the time evolution of a few arbitrarily chosen dynamical variables as a function of the Reynolds number, the location of this first Hopf bifurcation is obtained for a collection of cavity cases. Results show a rather strong influence of the free surface both on the onset of the unsteadiness and on the dynamical features of the flow. © 1996 American Institute of Physics.
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  • 18
    ISSN: 1748-7692
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Notes: Interannual, seasonal, and regional variation in the diet of porpoises, Phocoena phocoena, in Scottish (UK) waters was studied using stomach contents of animals stranded between 1992 and 2003. Most samples came from the east coast (including many porpoises killed by bottlenose dolphins), with smaller numbers from the west coast and from Shetland. The most important prey types, in terms of contribution by number and mass, were whiting (Merlangius merlangus) and sand eels (Ammodytidae). Multivariate analysis confirmed the existence of regional, seasonal, and interannual variation in diet, as well as differences (i. e., biases) related to cause of death. These differences were further explored using univariate analyses. Sand eels were more important in the summer months (quarters 2 and 3) and on the east coast, whereas gadids were more important in winter and in the Shetland area. Some, but not all, observed trends in the numerical importance and size of prey taken were consistent with trends in abundance and size of fish taken during research trawl surveys. There was some evidence that porpoises 〈1 yr old took more gobies (Gobiidae) and shrimps than did older porpoises. Clupeids (herring Clupea harengus and sprat Sprattus sprattus) formed a relatively small proportion of the diet, but their importance varied from year to year. Although possible methodological biases prevent firm conclusions, it appears that the importance of clupeids in porpoise diet may have decreased since the 1960s, mirroring the decline in North Sea herring abundance. The recovery of the North Sea herring stock in recent years is not as yet reflected in porpoise diet.
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  • 19
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 1708-1714 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The molecular beam epitaxy of InSb/Si structures was accomplished using group IIa fluoride buffer layers. InSb growth was initiated by opening the In and Sb shutters simultaneously at substrate temperatures between 300 °C and 400 °C, producing In-terminated InSb(111)-A surfaces on CaF2/Si(111) substrates. Reflection high-energy electron diffraction, electron channeling, and high resolution x-ray diffraction measurements indicated that the InSb layers were of good crystalline quality. Electron mobilities at room temperature were as high as 65 000 cm2/V s for an 8-μm-thick InSb layer grown on CaF2/Si(111). On CaF2/Si(001) substrates, the InSb layers grew in the (111) orientation with two domains 90° apart. These InSb layers and ones grown on BaF2/CaF2/Si(111) substrates exhibited inferior electrical and structural properties compared to structures grown on CaF2/Si(111) substrates. © 1997 American Institute of Physics.
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  • 20
    Electronic Resource
    Electronic Resource
    Springer
    Plant and soil 158 (1994), S. 53-62 
    ISSN: 1573-5036
    Keywords: organic acid anion ; phosphatase ; pH change ; P solubilization ; rhizosphere ; root ; seed P ; upland rice
    Source: Springer Online Journal Archives 1860-2000
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Abstract Experimental measurements of phosphorus (P) uptake and the forms of soil P depleted from an Ultisol by 6 upland rice cultivars are reported. In both P-fertilized and-unfertilized soil, the majority of P taken up was solubilized from a 0.1 M NaOH-soluble pool by root-induced changes. The soil pH within 4 mm of the roots was lowered by up to 0.5 units (from 4.6), but this by itself could not account for the P solubilized, and nor could increased phosphatase activity near the roots. The possible role of root-released low molecular weight organic acid anions in P solubilization is discussed. No significant differences in the extent of solubilization by a given root mass could be detected between cultivars. In P-unfertilized soil, but not in P-fertilized soil, there were significant differences between cultivars in ‘internal’ P efficiency as measured by shoot dry weight per unit total plant P. In unfertilized soil, root growth and P uptake were strongly correlated with the P content of the seeds from which the plants were grown.
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