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  • Articles  (757)
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  • 1
    Publication Date: 1980-09-01
    Print ISSN: 0036-7842
    Topics: Biology
    Published by Springer
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  • 2
    Publication Date: 2022-05-26
    Description: © The Author(s), 2020. This article is distributed under the terms of the Creative Commons Attribution License. The definitive version was published in Faktorova, D., Nisbet, R. E. R., Robledo, J. A. F., Casacuberta, E., Sudek, L., Allen, A. E., Ares, M., Jr., Areste, C., Balestreri, C., Barbrook, A. C., Beardslee, P., Bender, S., Booth, D. S., Bouget, F., Bowler, C., Breglia, S. A., Brownlee, C., Burger, G., Cerutti, H., Cesaroni, R., Chiurillo, M. A., Clemente, T., Coles, D. B., Collier, J. L., Cooney, E. C., Coyne, K., Docampo, R., Dupont, C. L., Edgcomb, V., Einarsson, E., Elustondo, P. A., Federici, F., Freire-Beneitez, V., Freyria, N. J., Fukuda, K., Garcia, P. A., Girguis, P. R., Gomaa, F., Gornik, S. G., Guo, J., Hampl, V., Hanawa, Y., Haro-Contreras, E. R., Hehenberger, E., Highfield, A., Hirakawa, Y., Hopes, A., Howe, C. J., Hu, I., Ibanez, J., Irwin, N. A. T., Ishii, Y., Janowicz, N. E., Jones, A. C., Kachale, A., Fujimura-Kamada, K., Kaur, B., Kaye, J. Z., Kazana, E., Keeling, P. J., King, N., Klobutcher, L. A., Lander, N., Lassadi, I., Li, Z., Lin, S., Lozano, J., Luan, F., Maruyama, S., Matute, T., Miceli, C., Minagawa, J., Moosburner, M., Najle, S. R., Nanjappa, D., Nimmo, I. C., Noble, L., Vanclova, A. M. G. N., Nowacki, M., Nunez, I., Pain, A., Piersanti, A., Pucciarelli, S., Pyrih, J., Rest, J. S., Rius, M., Robertson, D., Ruaud, A., Ruiz-Trillo, I., Sigg, M. A., Silver, P. A., Slamovits, C. H., Smith, G. J., Sprecher, B. N., Stern, R., Swart, E. C., Tsaousis, A. D., Tsypin, L., Turkewitz, A., Turnsek, J., Valach, M., Verge, V., von Dassow, P., von der Haar, T., Waller, R. F., Wang, L., Wen, X., Wheeler, G., Woods, A., Zhang, H., Mock, T., Worden, A. Z., & Lukes, J. Genetic tool development in marine protists: emerging model organisms for experimental cell biology. Nature Methods, 17, (2020): 481-494, doi:10.1038/s41592-020-0796-x.
    Description: Diverse microbial ecosystems underpin life in the sea. Among these microbes are many unicellular eukaryotes that span the diversity of the eukaryotic tree of life. However, genetic tractability has been limited to a few species, which do not represent eukaryotic diversity or environmentally relevant taxa. Here, we report on the development of genetic tools in a range of protists primarily from marine environments. We present evidence for foreign DNA delivery and expression in 13 species never before transformed and for advancement of tools for eight other species, as well as potential reasons for why transformation of yet another 17 species tested was not achieved. Our resource in genetic manipulation will provide insights into the ancestral eukaryotic lifeforms, general eukaryote cell biology, protein diversification and the evolution of cellular pathways.
    Description: We thank M. Salisbury and D. Lacono, C. Poirier, M. Hamilton, C. Eckmann, H. Igel, C. Yung and K. Hoadley for assistance; V.K. Nagarajan, M. Accerbi and P.J. Green who carried out Agrobacterium studies in Heterosigma akashiwo, and N. Kraeva, C. Bianchi and V. Yurchenko for the help with designing the p57-V5+NeoR construct. We are also grateful to the protocols.io team (L. Teytelman and A. Broellochs) for their support. This collaborative effort was supported by the Gordon and Betty Moore Foundation EMS Program of the Marine Microbiology Initiative (grant nos. GBMF4972 and 4972.01 to F.-Y.B.; GBMF4970 and 4970.01 to M.A. and A.Z.W.; GBMF3788 to A.Z.W.; GBMF 4968 and 4968.01 to H.C.; GBMF4984 to V.H.; GBMF4974 and 4974.01 to C. Brownlee; GBMF4964 to Y. Hirakawa; GBMF4961 to T. Mock; GBMF4958 to P.S.; GBMF4957 to A.T.; GBMF4960 to G.J.S.; GBMF4979 to K.C.; GBMF4982 and 4982.01 to J.L.C.; GBMF4964 to P.J.K.; GBMF4981 to P.v.D.; GBMF5006 to A.E.A.; GBMF4986 to C.M.; GBMF4962 to J.A.F.R.; GBMF4980 and 4980.01 to S.L.; GBMF 4977 and 4977.01 to R.F.W.; GBMF4962.01 to C.H.S.; GBMF4985 to J.M.; GBMF4976 and 4976.01 to C.H.; GBMF4963 and 4963.01 to V.E.; GBMF5007 to C.L.D.; GBMF4983 and 4983.01 to J.L.; GBMF4975 and 4975.01 to A.D.T.; GBMF4973 and 4973.01 to I.R.-T. and GBMF4965 to N.K.), by The Leverhulme Trust (RPG-2017-364) to T. Mock and A. Hopes, and by ERD funds (16_019/0000759) from the Czech Ministry of Education to J.L.
    Repository Name: Woods Hole Open Access Server
    Type: Article
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 3317-3320 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The response times of nonresonant p-Ge detectors and of resonant photon-drag detectors made from AlxGa1−xAs/GaAs multiquantum well systems are measured with intense 300-ps optical pulses of 10-μm wavelength generated with the aid of an improved laser system based on optical free induction decay. A response time limited by the oscilloscope-amplifier bandwidth is reached with the quantum well systems. Their response time is shorter than that of a p-Ge photon-drag detector. The light-pulse traveling time limits the performance of the large p-Ge photon-drag detectors.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2827-2829 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel room temperature GaAs/AlGaAs multiquantum-well photon drag detector operating in the 10 μm wavelength range and designed as a microstrip transmission line has been developed. Total-reflection angle incoupling, using a Ge prism, provides velocity matching between the optical and electrical pulses. Signal transients with 10 ps rise and fall time have been measured using 2 ps pulses from a free electron laser. From the wavelength dependence of the photon drag signal the room temperature momentum relaxation times in the first and second electron subband can be determined. © 1995 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Environmental science & technology 28 (1994), S. 204-209 
    ISSN: 1520-5851
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Energy, Environment Protection, Nuclear Power Engineering
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Environmental science & technology 29 (1995), S. 3070-3071 
    ISSN: 1520-5851
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Energy, Environment Protection, Nuclear Power Engineering
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 3274-3276 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present intersubband absorption measurements performed on p-type quasistrain-compensated modulation-doped Si0.2Ge0.8/Si quantum wells grown on Si0.5Ge0.5 pseudosubstrates. Several intersubband absorption peaks are observed up to room temperature. A strong confinement shift of the resonance occuring between the ground and the first excited heavy hole states has been observed, with the absorption peak shifting from λ=5.3 μm to as short as 3.8 μm. Excellent overall agreement with a 6 band k⋅p calculation is obtained, proving the accuracy of recently predicted values of band offsets. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2647-2649 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present the realization of a traveling-wave electrical pulse generator using pure nonresonant instantaneous optical rectification in bulk GaAs. The optical excitation was achieved by far-infrared pulses of 1–6 ps duration in the wavelength range from 8 to 15 μm, generated by a free-electron laser. The coupling of the optical rectification polarization into the fundamental mode of the microstrip transmission line is verified by angle-resolved measurements. Since optical femtosecond pulses are now becoming readily available, this alternative technique, which gains in efficiency at shorter pulses, may find growing importance for ultrafast pulse generation. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3218-3220 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Self-assembled C-induced Ge dots are islands which are not formed by the Stranski–Krastanov mode of growth. They are formed by a three-dimensional mode originating from the undulating strain fields of the C alloyed Si (100) surface. This opens additional possibilities to control the size and the shape of these dots by modifying the strain fields of the C-alloyed Si surface. Here, we show that the amount of C deposited prior to the growth of the Ge islands strongly effects the diameter and height of the dots. Increasing the C coverage to 0.3 monolayer leads to the formation of comparably compact islands. Consequently, the photoluminescence of the dots is shifted to lower energies compared to dots grown with lower C coverages. © 2000 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1257-1259 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of strain compensation in Si/SiGeC multiple quantum wells (MQWs) is investigated. Photoluminescence measurements on strain-reduced Si/SiGeC layers indicate a type-I band alignment. Values for the conduction-band and valence-band offsets of nearly strain-free Si/SiGeC MQWs are presented. Variation of the strain in the pseudomorphic layers reveals a lowering of the gap energy for exactly strain-compensated SiGeC compared to compressive SiGeC. A model is developed which explains this energy behavior in terms of band offsets and confinement shifts. The band alignments of strain-reduced Si/SiGeC and Si/SiC are compared. © 1998 American Institute of Physics.
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