ISSN:
1573-4803
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract Cerium nitride films were deposited by ion plating in an electron-beam sustained Ce arc discharge in a nitrogen atmosphere. The crystal structure was strongly affected by the arc discharge current and the substrate temperature. The lattice spacing of CeN film is 0.5020 nm with a density of 7.82 g cm−3. This film showed a paramagnetic property at 10 K in a magnetic field of 20 kOe. The Knoop hardness for CeN film is over 1600. The electrical resistivity was 4.6 × 10−4 Ωcm with p-type conductivity. The carrier concentration of the CeN film increased after exposure to the air, which suggested that the valence of Ce in CeN is probably 4+.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1023/A:1013264709122
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