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  • Articles  (999)
  • Physics  (999)
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  • Articles  (999)
Journal
  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 85 (1981), S. 2429-2430 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 95 (1991), S. 6642-6647 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2774-2779 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electro-optic Kerr effect and its wavelength dispersion have been measured in glasses representing several compositional systems. The measured Kerr effect was found to be large for glasses having large refractive indices, including: (i) glasses containing high concentrations of the heavy metals Pb, Bi, and Tl; (ii) glasses with high Nb, Ta, and Ti content; and (iii) tellurite glasses. Comparison of the third-order nonlinear susceptibility, χeff(ω = ω + 0 + 0), obtained from the measured electro-optic data, to values estimated from literature values of the optical frequency value, χeff(ω = ω + ω − ω) suggest an opposition of the electronic and nuclear contributions to the low-frequency electro-optic effect for the glasses containing Ti, Ta, or Nb.
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experiments with coaxial plasma guns at currents in excess of ten megamperes have resulted in the production of high-voltage pulses (0.5 MV) and hard x radiation (10–200 keV). The x-radiation pulse occurs substantially after the high-voltage pulse suggesting that high-energy electrons are generated by dynamic processes in a very high speed ((approximately-greater-than)106 m/s), magnetized plasma flow. Such flows, which result from acceleration of relatively low-density plasma (10−4 vs 1.0 kg/m3) by magnetic fields of 20–30 T, support high voltages by the back electromotive force-u×B during the opening switch phase of the plasma flow switch. A simple model of classical ion slowing down and subsequent heating of background electrons can explain spectral evidence of 30-keV electron temperatures in fully stripped aluminum plasma formed from plasma flows of 1–2 × 106 m/s. Similar modeling and spectral evidence indicates tungsten ion kinetic energies of 4.5 MeV and 46 keV electron temperatures of a highly stripped tungsten plasma.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 6844-6849 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data are presented on the continuous (cw) 77–200 K operational characteristics of cw 300-K AlxGa1−xAs-GaAs quantum-well heterostructure diode lasers grown on Si substrates. Operation is demonstrated for over 500 h with a junction temperature as high as ∼200 K for a diode previously operated cw 300 K for over 10 h with its junction side mounted away from the heat sink. The data indicate that longer cw 300-K lifetimes than previously demonstrated (17 h) may be possible. The effects of the optical power level on the degradation rate are examined, and it is shown that the maximum cw 300-K power output for these devices (∼30 mW/facet) is limited by catastrophic facet degradation. The effects of naturally occurring microcracks on device stability are also considered, and the effect of stress on the output polarization is measured and discussed.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1435-1444 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We analyze the near-threshold behavior of a circularly symmetric distributed feedback laser by developing a coupled-mode theory analysis for all azimuthal modes. We show that the equations that describe the low-order azimuthal modes are, to a very good approximation, the same as those for the one-dimensional (linear) distributed feedback laser. We examine the behavior of higher-order azimuthal modes by numerically solving the exact coupled-mode equations. We find that while a significant amount of mode discrimination exists among radial (longitudinal) modes, as in the one-dimensional distributed feedback laser, there is a much smaller degree of discrimination among azimuthal modes, indicating probability of multimode operation. Despite the multimode behavior, we find that the frequency bandwidth associated with modes that do lase ought to be smaller than the spacing between Fabry-Perot modes of a typical semiconductor laser. This laser is an excellent candidate for a surface-emitting laser—it should have a superb quality output beam and is well-suited for array operation.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 64 (1993), S. 3328-3329 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A well-established method for the accurate measurement of small changes in ac magnetic susceptibility is to initially null and then monitor the output of the susceptometer as various parameters are modified. Use of a computer-controlled phase shift filter has allowed us to build a system that will introduce virtually orthogonal signals to compensate for the in-phase and out-of-phase components of the output. The system described is designed for use over the frequency range 50 Hz–4 kHz. Extended frequency ranges are possible with only slight modifications.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Geophysical prospecting 25 (1977), S. 0 
    ISSN: 1365-2478
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Geosciences , Physics
    Notes: Seismic reflection methods are being developed at the University of Manitoba to aid in determining fine crustal structure in the Precambrian of Manitoba and northwestern Ontario. Present-day environmental concern as well as mineshaft conditions necessitate the detonation of several smaller charges repeated, say, I times and followed by ‘vertical’ stacking. To obtain the familiar √I improvement in signal-to-noise (S:N) amplitude ratio applying the straight-sum (SS) method, one assumes, among other things, that both S:N ratio and signal variance are the same on all traces. Dropping these assumptions, as we must for our data, it becomes necessary to apply weighting coefficients to optimize the S:N ratio of the stacked trace. We still assume the signal shapes to be the same for repeated shots, so for the jth trace on the record of the ith shot we model the time series as: tij=ai (sj+nij); where ai is a scaling factor. The proper weights wi are then shown to be proportional to σsi/σ2ni where σ2 is variance, or to γi/ai where γi is S:N power ratio.Applying the weighted-stack (WS) method gives S:N amplitude ratios which are, on average, 55% of the optimal ratios expected from WS theory compared with only 24% for the SS method. The 45% shortfall in WS performance is ascribed mainly to trace-alignment (or time-delay) errors. Varying noise levels on individual traces, slight dissimilarity of signal shape, and correlated noise may also contribute to a lesser extent (in decreasing order of significance). This WS method appears to strike a good practical balance between S:N improvement and processing efficiency.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5084-5089 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoreflectance spectra have recently been obtained for a range of single strained Si1−xGex epilayers for 0.12〈x〈0.24, which are buried under a Si cap. Spectra measured at different positions on a sample wafer showed pronounced changes in the SiGe line shape. Here these changes are shown to be due to phase shifts arising from changing optical interference effects caused by variations in the Si cap thickness. The phase shifts are determined accurately using a Kramers–Kronig analysis and are interpreted in terms of a multiple-reflection treatment incorporating a calculation of the Seraphin coefficients. This allows the Si cap thiakness changes to be determined and compared to the0results of speatroscopic ellipsometry measurements. © 1995 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4285-4287 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoreflectance spectra have been obtained from single strained Si1−xGex epilayers (0.12〈x〈0.24) buried under a silicon cap. Despite dramatic changes in the shape of photoreflectance spectra obtained at different positions on a sample wafer, which are explained in terms of a strong interference effect as the Si cap thickness varied, spectra were fitted adequately using three Lorentzian oscillators. Critical point transition energies calculated in this way were consistent with E1 and E1+Δ1 in Si1−xGex and E′0 in silicon and allowed for determination of composition to within x±1.5%. © 1995 American Institute of Physics.
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