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  • 1
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    Intersubband infrared absorption in Ge(x)Si(1-x)/Si superlattice by photocurrent measurement (1990)
    In:  Other Sources
    Details
    Publication Date: 2011-08-19
    Description: The intersubband IR absorption of holes in a Ge(x)Si(1-x)/Si superlattice is observed for the first time. In the experiment, the photocurrent is measured as a function of applied bias which is used to inject holes to the minibands of the superlattice. Two peaks in the photocurrent as a function of bias across the device are observed due to intersubband absorption between the ground to the first and the first of the second light hole minibands. The polarization dependence measurement is used to study the nature of the transitions and is in good agreement with the selection rules.
    Keywords: SOLID-STATE PHYSICS
    Type: Applied Physics Letters (ISSN 0003-6951); 56; 1342-134
    Format: text
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    NASA TECHNICAL REPORTS
  • 2
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    Growth and characterization of molecular beam epitaxial GaAs layers on porous silicon (1987)
    In:  Other Sources
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    Publication Date: 2011-08-19
    Description: GaAs layers have been grown on porous silicon (PS) substrates with good crystallinity by molecular beam epitaxy. In spite of the surface irregularity of PS substrates, no surface morphology deterioration was observed on epitaxial GaAs overlayers. A 10-percent Rutherford backscattering spectroscopy minimum channeling yield for GaAs-on-PS layers as compared to 16 percent for GaAs-on-Si layers grown under the same condition indicates a possible improvement of crystallinity when GaAs is grown on PS. Transmission electron microscopy reveals that the dominant defects in the GaAs-on-PS layers are microtwins and stacking faults, which originate from the GaAs/PS interface. GaAs is found to penetrate into the PS layers. n-type GaAs/p-type PS heterojunction diodes were fabricated with good rectifying characteristics.
    Keywords: SOLID-STATE PHYSICS
    Type: Applied Physics Letters (ISSN 0003-6951); 51; 814-816
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  • 3
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    Epitaxial thin film GaAs solar cells using OM-CVD techniques (1981)
    In:  Other Sources
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    Publication Date: 2019-07-13
    Description: A new approach has been initiated at JPL to fabricate thin-film, high efficiency GaAs solar cells on low-cost, single-crystal Si substrates having a thin CVD interlayer of Ge to minimize the lattice and thermal expansion mismatch. For initial experiments, n(+)/p GaAs cells were grown by OM-CVD on single-crystal GaAs and Ge wafers. Details of the growths and performance results will be presented. Subsequently, a combined epitaxial structure of OM-CVD GaAs on a strongly adherent Ge interlayer on (100) Si was grown. This is the first report of the successful growth of this composite structure. Low module costs projected by JPL SAMICS methodology calculations and the potential for 400-600W/kg space solar arrays will be discussed.
    Keywords: SOLID-STATE PHYSICS
    Type: Photovoltaic Specialists Conference; May 12, 1981 - May 15, 1981; Kissimmee, FL
    Format: text
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    NASA TECHNICAL REPORTS
  • 4
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    Defect distribution near the surface of electron-irradiated silicon (1978)
    In:  Other Sources
    Details
    Publication Date: 2019-06-27
    Description: The surface-defect distributions of electron-irradiated n-type silicon have been investigated using a transient capacitance technique. Schottky, p-n junction, and MOS structures were used in profiling the defect distributions. Surface depletions of defects observed were attributed to the vacancy distribution, but not that of oxygen, and other capture centers' distributions. The vacancy diffusion length at 300 K was estimated to be about 3-6 microns.
    Keywords: SOLID-STATE PHYSICS
    Type: Applied Physics Letters; 33; Sept. 15
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  • 5
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    Studies of molecular-beam epitaxy growth of GaAs on porous Si substrates (1988)
    In:  Other Sources
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    Publication Date: 2019-07-12
    Description: GaAs has been grown on porous Si directly and on Si buffer layer-porous Si substrates by molecular-beam epitaxy. In the case of GaAs growth on porous Si, transmission electron microscopy (TEM) reveals that the dominant defects in GaAs layers grown on porous Si are microtwins and stacking faults, which originate from the GaAs/porous Si interface. GaAs is found to penetrate into the porous Si layers. By using a thin Si buffer layer (50 nm), GaAs penetration diminishes and the density of microtwins and stacking faults is largely reduced and localized at the GaAs/Si buffer interface. However, there is a high density of threading dislocations remaining. Both Si (100) aligned and four degree tilted substrates have been examined in this study. TEM results show no observable effect of the tilted substrates on the quality of the GaAs epitaxial layer.
    Keywords: SOLID-STATE PHYSICS
    Type: Journal of Vacuum Science and Technology B (ISSN 0734-211X); 6; 696-698
    Format: text
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