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  • 1
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    Apparatus for use in examining the lattice of a semiconductor wafer by X-ray diffraction (1978)
    In:  CASI
    Details
    Publication Date: 2019-06-27
    Description: An improved apparatus for examining the crystal lattice of a semiconductor wafer utilizing X-ray diffraction techniques was presented. The apparatus is employed in a method which includes the step of recording the image of a wafer supported in a bent configuration conforming to a compound curve, produced through the use of a vacuum chuck provided for an X-ray camera. The entire surface thereof is illuminated simultaneously by a beam of incident X-rays which are projected from a distant point-source and satisfy conditions of the Bragg Law for all points on the surface of the water.
    Keywords: SOLID-STATE PHYSICS
    Format: application/pdf
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    NASA TECHNICAL REPORTS
  • 2
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    Effect of interfacial oxide layers on the current-voltage characteristics of Al-Si contacts (1976)
    In:  CASI
    Details
    Publication Date: 2019-06-27
    Description: Aluminum-silicon contacts with very thin interfacial oxide layers and various surface impurity concentrations are studied for both n and p-type silicon. To determine the surface impurity concentrations on p(+)-p and n(+)-n structures, a modified C-V technique was utilized. Effects of interfacial oxide layers and surface impurity concentrations on current-voltage characteristics are discussed based on the energy band diagrams from the conductance-voltage plots. The interfacial oxide and aluminum layer causes image contrasts on X-ray topographs.
    Keywords: SOLID-STATE PHYSICS
    Type: NASA-CR-150044
    Format: application/pdf
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    NASA TECHNICAL REPORTS
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