Publication Date:
2019-06-28
Description:
The epitaxial growth of Mg-doped GaAs by the organometallic vapor phase epitaxial process (OM-VPE) has been achieved for the first time. The doping is controllable over a wide range of input fluxes of bis (cyclopentadienyl) magnesium, (C5H5)2Mg, the organometallic precursor to Mg.
Keywords:
SOLID-STATE PHYSICS
Type:
Electronics Letters; 18; June 24
Format:
text
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