ISSN:
1432-0630
Keywords:
PACS: 73.30
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
The electro-optical properties of the films are studied by measuring the infrared optical absorption and the yield of hole photoemission across the Schottky barrier to the p-Si substrate. The Schottky barrier height of the amorphous a-IrSi to the valence band of Si is 0.17–0.18 eV. The barrier height of the polycrystalline c-IrSi depends on the degree of texturing of the silicide; the Schottky barrier height increases from 0.14 eV to 0.18 eV when the substrate temperature is increased from room temperature to 400 °C during the Ir metal deposition prior to the 500 °C silicidation. The non-linearity of the photoemission yield observed for the amorphous a-IrSi in the Fowler plot is due to an energy-dependent photon absorption of these amorphous films. An evaluation of the scattering events in the metal films shows that the mean free path for inelastic scattering is λin=500 nm in the amorphous a-IrSi which is one order of magnitude larger than that in the crystalline c-IrSi. The mean free path for quasi-elastic scattering λqe=0.3 nm, of the amorphous a-IrSi is in the order of the interatomic distance, indicating a localization of the electronic states.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/s003390050724
Permalink
