Publication Date:
2011-08-19
Description:
The Si/CoSi2/Si heterostructures prepared by codeposition and solid-phase epitaxy on Si(111) substrates were characterized using Auger plasmon data as a measure of Si overlayer thickness. The method of calibration is described, and the results of two studies, including a study of islanding in Si/CoSi2/Si and a study of diffusion in CoSi2/Si are presented, illustrating the utility of the Auger plasmon loss technique. It is shown that, most likely, the diffusion proceeds through residual defects in the CoSi2.
Keywords:
SOLID-STATE PHYSICS
Type:
Journal of Applied Physics (ISSN 0021-8979); 65; 3531-353
Format:
text
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