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  • Chemistry  (1)
  • LASERS AND MASERS  (1)
  • plait points  (1)
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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    International journal of thermophysics 6 (1985), S. 631-642 
    ISSN: 1572-9567
    Keywords: critical exponents ; diffusion coefficients ; Gouy interferometry ; plait points ; ternary liquid systems
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Mutual diffusion coefficients were measured as a function of temperature above the 30°C plait point of the water + 2-propanol + cyclohexane system using a Gouy interferometer and a new temperature-jump procedure. The four independent diffusion coefficients were found to decrease rapidly along the constant plait-point line as the temperature approached the consolute or plait temperature. Effective critical exponents were found to be 0.55 for the individual diffusion coefficients and 1.31 for the determinant of the diffusion coefficient matrix. The measured diffusion coefficients satisfy all stability requirements, although cross diffusion coefficients were found to be as large as main diffusion coefficients and a negative value was obtained for the water main diffusion coefficient in the component representation utilized in this work.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Hoboken, NJ : Wiley-Blackwell
    AIChE Journal 32 (1986), S. 1125-1131 
    ISSN: 0001-1541
    Keywords: Chemistry ; Chemical Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Notes: The composition and temperature dependence of the mutual diffusion coefficient near the liquid-liquid critical point of methanol-n-hexane mixtures has been determined by Gouy interferometry. The critical exponent was found to be 0.685. Constant-temperature extrapolation to zero diffusivity located the spinodal curve. Spinodal loci calculated from the NRTL model are inconsistent with the experimentally determined values.
    Additional Material: 5 Ill.
    Type of Medium: Electronic Resource
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  • 3
    Publication Date: 2019-07-12
    Description: The performance of a GaAs/GaAlAs distributed Bragg reflector (DBR) laser using a focused ion beam implanted grating (FIB-DBR) is reported for the first time. Stripes of Si(2+) with a period of 2300 A and a dose about 10 to the 14th/sq cm are directly implanted into the passive large optical cavity layer to provide the distributed feedback. Surface-emitting light from the second-order grating is observed. Threshold current of 110 mA and single DBR mode operation from 20 to 40 C are obtained. The wavelength tuning rate with temperature is 0.8 A/C. The coupling coefficient is estimated to be 15/cm. The results show that FIB technology is practical for distributed feedback and DBR lasers and optoelectronic integrated circuits.
    Keywords: LASERS AND MASERS
    Type: Applied Physics Letters (ISSN 0003-6951); 53; 265-267
    Format: text
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