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  • SOLID-STATE PHYSICS  (17)
  • Chemical Engineering  (4)
  • ELECTRONICS AND ELECTRICAL ENGINEERING  (4)
  • 1
    Digitale Medien
    Digitale Medien
    Hoboken, NJ : Wiley-Blackwell
    AIChE Journal 42 (1996), S. 301-318 
    ISSN: 0001-1541
    Schlagwort(e): Chemistry ; Chemical Engineering
    Quelle: Wiley InterScience Backfile Collection 1832-2000
    Thema: Chemie und Pharmazie , Werkstoffwissenschaften, Fertigungsverfahren, Fertigung
    Notizen: Experiments conducted quantify the macroscopic hydrodynamic characteristics of various scale 2-D bubble columns, which include dispersed and coalesced bubble regimes characterized by two flow conditions (4- and 3-region flow) with coherent flow structures. Hydrodynamic behavior is analyzed based on flow visualization and a particle image velocimetry (PIV) system. Columns operated in the 4-region flow condition comprise descending, vortical, fast bubble and central plume regions. The fast bubble flow region moves in a wavelike manner, and thus the flow in the vicinity of this region is characterized macroscopically in terms of wave properties. In columns greater than 20 cm in width, the transition from the dispersed bubble flow regime to the 4- and then to 3-region flow in the coalesced bubble regime occurs progressively with gas velocities at 1 and 3 cm/s, respectively. The demarcation of flow regimes is directly related to measurable coherent flow structures. The instantaneous and time-averaged liquid velocity and holdup profiles provided by the PIV system are presented in light of the macroscopic flow structure in various 2-D bubble columns. Numerical simulations demonstrate that the volume of fluid method can provide the time-dependent behavior of dispersed bubbling flows and account for the coupling effects of pressure field and the liquid velocity on the bubble motion. Comparison of computational results with PIV results for two different bubble injector arrangements is satisfactory.
    Zusätzliches Material: 27 Ill.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 2
    Digitale Medien
    Digitale Medien
    Hoboken, NJ : Wiley-Blackwell
    AIChE Journal 24 (1978), S. 830-839 
    ISSN: 0001-1541
    Schlagwort(e): Chemistry ; Chemical Engineering
    Quelle: Wiley InterScience Backfile Collection 1832-2000
    Thema: Chemie und Pharmazie , Werkstoffwissenschaften, Fertigungsverfahren, Fertigung
    Notizen: As an alternative to tearing, symbolic permutation may be used to facilitate data processing rather than dimensional reduction in equation solving, permitting a reduction in computing effort without introducing any deleterious effects on the numerical convergence. Data structures and processing techniques suitable for this purpose have been successfully devised and tested. A program incorporating these techniques has been implemented on a CDC 6400 computer and used to solve irreducible systems of up to 551 linear and nonlinear equations.
    Zusätzliches Material: 4 Ill.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 3
    Digitale Medien
    Digitale Medien
    Hoboken, NJ : Wiley-Blackwell
    AIChE Journal 24 (1978), S. 839-848 
    ISSN: 0001-1541
    Schlagwort(e): Chemistry ; Chemical Engineering
    Quelle: Wiley InterScience Backfile Collection 1832-2000
    Thema: Chemie und Pharmazie , Werkstoffwissenschaften, Fertigungsverfahren, Fertigung
    Notizen: SPARSCODE was evaluated based on the simulation of natural gas liquefaction using multicomponent refrigerants. Results obtained on four cases containing 179 to 573 equations show a computing time reduction by a factor of 40 to 250 in equation solving and an overall reduction by a factor of 4 to 30 for the simulation.
    Zusätzliches Material: 6 Ill.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 4
    Digitale Medien
    Digitale Medien
    Brookfield, Conn. : Wiley-Blackwell
    Polymer Composites 11 (1990), S. 291-300 
    ISSN: 0272-8397
    Schlagwort(e): Chemistry ; Chemical Engineering
    Quelle: Wiley InterScience Backfile Collection 1832-2000
    Thema: Maschinenbau
    Notizen: A method for improving the fracture resistance of brittle polymer composites was explored. This method involved the incorporation of short fibers in a thermosetting resin before being used for impregnating the continuous fibers or fabrics. The impact fracture energy and the maximum load experienced by the hybrid can be associated with the parameters of short fibers (e.g., volume fraction and mechanical properties). Electron micrographs of the fracture surfaces of the specimen loaded under mode I and mode II conditions indicate that the short fiber modified composites have a significantly greater fracture surface area and higher level of plastic deformation than the unmodified composites. The data from all the tests demonstrate that adding a small amount of short fibers can significantly improve the interlaminar fracture toughness and impact resistance of graphite/epoxy composites. However, a high volume fraction of added short fibers could make it difficult to out-gas during compression-molding, leading to a high void content and reduced mechanical properties of composites.
    Zusätzliches Material: 8 Ill.
    Materialart: Digitale Medien
    Standort Signatur Erwartet Verfügbarkeit
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  • 5
    Publikationsdatum: 2011-08-24
    Beschreibung: Simple immersion of Si in stain etches of HF:HNO3:H2O or NaNO2 in aqueous HF was used to produce films exhibiting luminescence in the visible similar to that of anodically-etched porous Si. All of the luminescent samples consist of amorphous porous Si in at least the near surface region. No evidence was found for small crystalline regions within these amorphous layers.
    Schlagwort(e): SOLID-STATE PHYSICS
    Materialart: ; : Structure of onboa
    Format: text
    Standort Signatur Erwartet Verfügbarkeit
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  • 6
    Publikationsdatum: 2011-08-24
    Beschreibung: Characterization of light-emitting porous Si films with X-ray photoelectron spectroscopy is reported. Only traces of O are detected on HF-etched samples, in contradiction to an earlier report that oxides are a significant component of porous Si. Si 2p and valence-band measurements demonstrate that the near-surface region of high porosity films which exhibit visible luminescence consists of amorphous Si.
    Schlagwort(e): SOLID-STATE PHYSICS
    Materialart: Applied Physics Letters (ISSN 0003-6951); 60; 1004-100
    Format: text
    Standort Signatur Erwartet Verfügbarkeit
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  • 7
    Publikationsdatum: 2011-08-19
    Beschreibung: The preparation of hydrogen-terminated silicon surfaces for use as starting substrates for low-temperature MBE growth is examined in detail. The procedure involves the ex situ removal under nitrogen of residual oxide from a silicon substrate using a spin-clean with HF in ethanol, followed by the in situ low-temperature desorption (150 C) of physisorbed etch residues. The critical steps and the chemical basis for these steps are examined using X-ray photoelectron spectroscopy. Impurity residues at the epilayer-substrate interface following subsequent homoepitaxial growth are studied using AES, SIMS and TEM. Finally, scanning tunneling microscopy is used to examine the effect of cleaning methods on substrate morphology.
    Schlagwort(e): SOLID-STATE PHYSICS
    Materialart: Thin Solid Films (ISSN 0040-6090); 183; 197-212
    Format: text
    Standort Signatur Erwartet Verfügbarkeit
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  • 8
    Publikationsdatum: 2011-08-19
    Beschreibung: IrSi(3)/p-Si Schottky diodes have been fabricated by a molecular beam epitaxy technique at 630 C. Good surface morphology was observed for IrSi(3) layers grown at temperatures below 680 C, and an increasing tendency to form islands is observed in samples grown at higher temperatures. Good diode current-voltage characteristics were observed and Schottky barrier heights of 0.14-0.18 eV were determined by activation energy analysis and spectral response measurement.
    Schlagwort(e): SOLID-STATE PHYSICS
    Materialart: Applied Physics Letters (ISSN 0003-6951); 56; 2013-201
    Format: text
    Standort Signatur Erwartet Verfügbarkeit
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  • 9
    Publikationsdatum: 2011-08-19
    Beschreibung: The feasibility of a novel p(+)-Si(1-x)Ge(x)-p-Si heterojunction internal photoemission (HIP) IR detector is demonstrated. A degenerately doped p(x)-Si(1-x)Ge(x) layer is required for strong IR absorption to generate photoexcited holes. The Si(1-x)Ge(x) layers are grown by molecular beam epitaxy, with boron concentrations up to 10 to the 20th/cu cm achieved by using an HBO2 source. Photoresponse at wavelengths ranging from 2 to 10 microns has been obtained with quantum efficiencies above 1 percent. The tailorable cutoff wavelength of the HIP detector has been demonstrated by varying the Ge composition ratio in the Si(1-x)Ge(x) layers.
    Schlagwort(e): ELECTRONICS AND ELECTRICAL ENGINEERING
    Materialart: Applied Physics Letters (ISSN 0003-6951); 57; 1422-142
    Format: text
    Standort Signatur Erwartet Verfügbarkeit
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  • 10
    Publikationsdatum: 2011-08-24
    Beschreibung: SiGe/Si heterojunction internal photoemission (HIP) detectors have been fabricated utilizing molecular beam epitaxy of p(+)-SiGe layers on p(-)-Si substrates. Elemental boron from a high-temperature effusion cell was used as the dopant source during MBE growth, and high doping concentrations have been achieved. Strong infrared absorption, mainly by free-carrier absorption, was observed for the degenerately doped SiGe layers. The use of elemental boron as the dopant source allows a low MBE growth temperature, resulting in improved crystalline quality and smooth surface morphology of the Si(0.7)Ge(0.3) layers. Nearly ideal thermionic emission dark current characteristics have been obtained. Photoresponse of the HIP detectors in the long-wavelength infrared regime has been demonstrated.
    Schlagwort(e): ELECTRONICS AND ELECTRICAL ENGINEERING
    Materialart: Applied Physics Letters (ISSN 0003-6951); 60; 380-382
    Format: text
    Standort Signatur Erwartet Verfügbarkeit
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