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  • 72.20  (2)
  • 12.80. Ng  (1)
  • 61.16  (1)
  • 61.72.Tt  (1)
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  • 1
    Electronic Resource
    Electronic Resource
    A chemical-bond approach to doping, compensation and photo-induced degradation in amorphous silicon (1986)
    Springer
    Applied physics 39 (1986), S. 243-250 
    Details
    ISSN: 1432-0630
    Keywords: 12.80. Ng
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We propose that during deposition of a-Si:H films a chemical equilibrium is established that relates the density of dangling-bond defects near mid-gap to the densities of electrons and holes in the conduction and valence band states. We develop the appropriate chemical reaction formalism and show that our model allows doping, compensation and photo-induced degradation to be treated within a single and unifying approach.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617268
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  • 2
    Electronic Resource
    Electronic Resource
    Field-ion imaging of a tungsten supertip (1995)
    Springer
    Applied physics 61 (1995), S. 99-100 
    Details
    ISSN: 1432-0630
    Keywords: 61.16 ; 68.35
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract For the first time, a supertip on a〈111〉W base tip has been self-imaged by field-ion microscopy with atomic resolution. It is a tiny crystalline protrusion of a few nm in diameter.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01538219
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  • 3
    Electronic Resource
    Electronic Resource
    Optical absorption and electronic transport in ion-implantation-doped polycrystalline SiC films (1995)
    Springer
    Applied physics 61 (1995), S. 193-201 
    Details
    ISSN: 1432-0630
    Keywords: 72.20 ; 72.80 ; 78.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Fine-grained (d≈0.1 μm), polycrytalline SiC films were prepared on top of insulating and optically transparent sapphire substrates by means of a thermal crystallization technique. Optical absorption measurements indicate that the individual SiC grains consist of relatively defect-free β-SiC surrounded by high-defect density grain-boundary material. Nominally undoped material exhibits a low de conductivity (δ≈10−8 Ω−1 cm−1) in the dark and an efficient photoconductivity apon illumination with short-wavelength UV light. The temperature dependence of the de transport exhibits a quasi-Arrhenius-type behaviour with average activation energies of the order to 0.6 eV. A characteristic feature of this kind of transport is a continuous increase in activation energy with increasing film temperature. Upon doping with N, P and Al ions, the average activation energy is decreased and room temperature conductivities of the order of 0.1 Ω−1 cm−1 are reached. Doping with B ions, on the other hand, only leads to high-resistivity material. It is shown that the electronic transport in doped SiC-On-Sapphire (SiCOS) films can be successfully modelled in terms of a grain-boundary-dominated conduction process. In this process thermal activation across potential barriers at the grain-boundary surfaces competes with funneling through these same barriers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01538389
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  • 4
    Electronic Resource
    Electronic Resource
    Hopping and band transport in amorphized semiconductors (1984)
    Springer
    Applied physics 33 (1984), S. 29-35 
    Details
    ISSN: 1432-0630
    Keywords: 72.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Crystalline samples of Si, GaAs, GaP, InP, and CdTe have been rendered amorphous by bombardment with rare gas ions. DC conductivity and thermopower have been measured as a function of temperature in the interval between 15–500 K. In all cases, electron transport at low temperatures is characterized by non-simply activated processes of the hopping type transport, whereas band transport is observed at higher temperatures. The common and individual features of the different amorphous systems are discussed within the framework of existing transport theories.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01197082
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  • 5
    Electronic Resource
    Electronic Resource
    Ion-implantation doping of crystalline 6H-SiC (1995)
    Springer
    Applied physics 61 (1995), S. 363-367 
    Details
    ISSN: 1432-0630
    Keywords: 72.80 ; 61.72.Tt
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The feasibility of ion implantation for p- and n-type doping of 6H-SiC has been studied. Single crystals were implanted at room temperature with 1017 ions/cm3 of B and Al, and of N and P, respectively, and step-annealed at temperatures up to 1900 K. The state of the crystal order was monitored by ion-beam-scattering techniques. After annealing at 1800 K, at a backscattering yield of about 1% in 〈0001〉-direction, maximum electrical activity of all dopants was observed within the range of 3–80% at room temperature. Impurity ionization levels were derived from conductivity measurements in the temperature range between 300–80 K, which also indicate the presence of compensating defects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01540109
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