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  • 1
    Monograph available for loan
    Monograph available for loan
    Introduction to space science (2021)
    Singapore : Springer | Beijing : Science Press
    Details Availability
    Call number: M 22.94936
    Description / Table of Contents: This book highlights the technological and managerial fundamentals and frontier questions of space science. Space science is a new interdisciplinary and comprehensive subject that takes spacecraft as the main tools to study the planet Earth, the solar-terrestrial space, the solar system, and even the whole universe, to answer significant questions covering the formation and evolution of the solar system and the universe, the origin and evolution of life and the structure of the material. The book introduces major scientific questions in various branches of space science and provides related technological and managerial knowledge. It also discusses the necessity of international cooperation and elaborates on the strategic planning of space science in China. The book can be used as a reference book or textbook for scientists, engineers, college students, and the public participating in space science programs.
    Type of Medium: Monograph available for loan
    Pages: XVII, 193 Seiten
    ISBN: 978-981-1657-50-4
    Series Statement: Springer aerospace technology
    DOI: 10.1007/978-981-16-5751-1
    Language: English
    Note: Chapter 1: Reasons to conduct research in space -- Chapter 2: History of Human Space Exploration -- Chapter 3: Major frontiers in space science (I) -- Chapter 4: Major frontiers in space science (II) -- Chapter 5: Space Systems Engineering and Its Systems -- Chapter 6: Technical fundamentals (I): orbit, attitude and TT&C -- Chapter 7: Technical fundamentals (II): scientific payloads and its application environment -- Chapter 8: Technical fundamentals (III): Mission Planning and Operations -- Chapter 9: Managements (I): Call for Mission Proposals and Its Selection -- Chapter 10: Managements (II): Mission Development and the Duty of Scientists and Engineers -- Chapter 11: Managements (III): Quality Management and Risk Control -- Chapter 12: Managements (IV): Full Mission Lifecycle Management and Output Evaluation -- Chapter 13: International Cooperation -- Chapter 14: Strategic Planning of Space Science in China -- Chapter 15: Relations of Space science, Space Technology and Space Applications.
    Location: Upper compact magazine
    Branch Library: GFZ Library
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  • 2
    Electronic Resource
    Electronic Resource
    Identification of the energy levels of Si:Rh (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2251-2255 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two thermostable levels E(0.31) and E(0.58) related to Rh in Si were observed using deep level transient spectroscopy and double correlation deep level transient spectroscopy techniques. By means of thermal annealing and electron irradiation, the microscopic natures of these levels were identified for the first time. The levels E(0.31) and E(0.58) arise from by the same impurity center but have different charge states. Their microstructures are not related to a pure substitutional Rh atom, but correspond to a complex. This result is compared to our self-consistent theoretical calculation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348704
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  • 3
    Electronic Resource
    Electronic Resource
    Physical behavior of ruthenium in silicon (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2746-2748 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the physical behavior of Ru atom in silicon in this paper. Two energy levels E(0.58) and H(0.34) were observed. The pure substitutional Ru in silicon was responsible for the H(0.34), and the E(0.58) was introduced by a complex of a Ru atom and a vacancy (or vacancies). By use of scattered wave-Xα (SW-Xα) cluster method the theoretical calculation of electronic states for substitutional Ru atom in silicon has been performed. The results obtained were compared with those of experimental measurements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348632
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  • 4
    Electronic Resource
    Electronic Resource
    Electron-induced gasification reactions in the fabrication process on graphite surface using scanning tunneling microscopy (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2342-2345 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the dependence of nanofabrication on the pulse duration explicitly with scanning tunneling microscopy, using graphite as an example. It is demonstrated that, under comparable conditions, the depth of the as-generated craters has monotonic correlation with the pulse duration, while the apparent surface diameters do not show significant changes. This is believed to be direct evidence that the electron-induced gasification reaction of the carbon atoms did occur during fabrication, rather than field evaporation mechanism. The removal rate of the carbon atoms is estimated to be on the order of 105/s. In addition, the characteristics of the fabrication is shown to be related to the specific reaction type. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371052
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  • 5
    Electronic Resource
    Electronic Resource
    Theoretical study of the Pd-B complex in silicon (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 7139-7141 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the results for the electronic structure of the interstitial Pd-substitutional B complex in silicon. The self-consistent field calculations were performed within the framework of scattered-wave Xα cluster method. Compared with the electronic structures of the isolated substitutional B in silicon and of the isolated interstitial Pd in silicon, we found that the shallow acceptor B impurity state is deepened by the perturbation from the Pd atom. The ionic model, which is currently accepted to describe interstitial 3d transition metal-III A group shallow acceptor impurity pair, is not quite suitable to deal with the system of Pd-B complex in silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344537
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  • 6
    Electronic Resource
    Electronic Resource
    A bacterial cell–cell communication signal with cross-kingdom structural analogues (2004)
    Oxford, UK : Blackwell Science Ltd
    Molecular microbiology 51 (2004), S. 0 
    Details
    ISSN: 1365-2958
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology , Medicine
    Notes: Extracellular signals are the key components of microbial cell–cell communication systems. This report identified a diffusible signal factor (DSF), which regulates virulence in Xanthomonas campestris pv. campestris, as cis-11-methyl-2-dodecenoic acid, an α,β unsaturated fatty acid. Analysis of DSF derivatives established the double bond at the α,β positions as the most important structural feature for DSF biological activity. A range of bacterial pathogens, including several Mycobacterium species, also displayed DSF-like activity. Furthermore, DSF is structurally and functionally related to farnesoic acid (FA), which regulates morphological transition and virulence by Candida albicans, a fungal pathogen. Similar to FA, which is also an α,β unsaturated fatty acid, DSF inhibits the dimorphic transition of C. albicans at a physiologically relevant concentration. We conclude that α,β unsaturated fatty acids represent a new class of extracellular signals for bacterial and fungal cell–cell communications. As prokaryote–eukaryote interactions are ubiquitous, such cross-kingdom conservation in cell–cell communication systems might have significant ecological and economic importance.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-2958.2003.03883.x
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  • 7
    Electronic Resource
    Electronic Resource
    Intra- and intermolecular C—H...π interactions in bis[benzyl 3-(fluoren-9-ylidene)dithiocarbazato-N3,S]nickel(II) (2000)
    Oxford [u.a.] : International Union of Crystallography (IUCr)
    Acta crystallographica 56 (2000), S. 1321-1322 
    Details
    ISSN: 1600-5759
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: The title compound, [Ni(C21H15N2S2)2], has a novel cis configuration with two fluorene moieties on the same side. The Ni atom is in a square-planar configuration. The molecular packing is stabilized by intramolecular stacking between the fluorene moieties and extensive C—H...π interactions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0108270100011628
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  • 8
    Electronic Resource
    Electronic Resource
    4-Amino-5-methyl-1,2,4-triazole-3-thione derivative of 4-[2-(2-hydroxyethyl)methylamino]benzaldehyde (2001)
    Copenhagen : International Union of Crystallography (IUCr)
    Acta crystallographica 57 (2001), S. o547-o549 
    Details
    ISSN: 1600-5368
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: The title compound, 4-{4-[2-(2-hydroxyethyl)methylamino]benzylideneamino}-5-methyl-1,2,4-triazole-3-thione, C13H17N5OS, is present in a thioketone form and the triazole ring is almost planar. The asymmetric unit consists of two molecules which have different conformations. There is a weak C—H...S intramolecular interaction, a weak O—H...S intermolecular interaction and intermolecular N—H...O and O—H...N hydrogen bonds.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S1600536801007851
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  • 9
    Electronic Resource
    Electronic Resource
    In Situ Synthesis of Rod-Like Tielite (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 352 (Aug. 2007), p. 111-114 
    Details
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: The purpose of this paper is to investigate the possibility of rod-like Al2TiO5 / α-Al2O3composites in situ formation via a mechanical activation process. A QM-ISP-4 Planetary Mill wasemployed to activate mechanically the mixtures of anatase and corundum in air at room temperaturefor different times. The milled powder mixtures were pressed into platelets and then sintered in air at1300°C for 3 h. The XRD results showed that only Al2TiO5 and α-Al2O3 phases could be detected inthe sintered samples when the activated time reached 30 hours. The SEM observations illustrated theunusual microstructure of Al2TiO5 / α-Al2O3 ceramic composite materials. Abnormal grains withlongitudinal length ~10 μm23 transversal length ~1 μm and equiaxed matrix grains of ~3 μm on anaverage were observed. EDXA proved that the rod-like grains and the fine equiaxed matrix grainswere composed of Al2TiO5 and α-Al2O3, separately. The roles of anisotropic grain growth caused bymechanical activation are discussed for the in situ formation of rod-like Al2TiO5 / α-Al2O3 ceramiccomposite materials
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/55/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.352.111.pdf
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  • 10
    Electronic Resource
    Electronic Resource
    Experimental Study on Lapping Force Characteristics of Hard-Brittle Materials in Ultrasonic Vibration Lapping (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 359-360 (Nov. 2007), p. 379-383 
    Details
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Hard-brittle materials have been popular used in manufacture experience because of theirexcellent performances. However the low plasticity, frangibility and non-conduction make themachining very difficult, especially in ultra-precise surface fabrication. Therefore, ultrasonicvibration is introduced to conventional lapping for the purpose of proper lapping force, higherremoval rate and fine surface quality. Through conventional and ultrasonic lapping experiment ofhard-brittle materials with different lapping parameters and different vibration models, the empiricalformula of lapping force in ultrasonic lapping is deduced by orthogonal regression analysis, theoptimum lapping parameters are put forward and the primary and secondary influencing sequenceof parameters on lapping force is presented. Moreover, the influencing rule of different lappingparameters such as rotational speed, feed speed, oilstone grit and lapping depth etc. on lapping forceis carried out. Experimental results show that ultrasonic vibration lapping is a high efficientprocessing method adapting to hard-brittle materials
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/55/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.359-360.379.pdf
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