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  • American Institute of Physics (AIP)  (13)
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  • 1
    Electronic Resource
    Electronic Resource
    Single-frequency antiguided laser array with buried distributed feedback grating (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 7220-7223 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single-frequency, in-phase mode operation has been obtained from a ten-element antiguided phase-locked array with Talbot-type filters by incorporating a buried distributed feedback grating using a three-step metalorganic chemical vapor deposition process. Stabilized frequency with 25 dB side-mode suppression ratio is achieved to 50 mW pulsed output power. In-phase or a mixture of in-phase and out-of-phase modes are observed in nonresonant (nonoptimized) devices. Means of improving device performance (e.g., use of resonant longitudinally uniform arrays or nearly resonant Talbot-filter arrays without gratings in the filter) are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356677
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  • 2
    Electronic Resource
    Electronic Resource
    High-power phase-locked InGaAs strained-layer quantum well heterostructure periodic laser array (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 457-459 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data are presented on high-power strained-layer InGaAs quantum well heterostructure laser arrays. These devices are periodic nonplanar arrays, formed by a single metalorganic chemical vapor deposition growth over a selectively etched corrugated GaAs substrate. The corrugation serves to provide both stripe definition and index guiding while suppressing lateral lasing perpendicular to the stripes. Maximum pulsed optical powers of 2.5 W/facet (width=1600 μm, length=440 μm) for an emission wavelength of 1.03 μm have been obtained from uncoated devices having threshold current densities in the range 290–600 A/cm2. Far-field radiation patterns indicate that the arrays are phase locked.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99883
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  • 3
    Electronic Resource
    Electronic Resource
    High-power nonplanar quantum well heterostructure periodic laser arrays (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1159-1161 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical pulsed powers of 8 W from a single uncoated facet and low (〈200 A/cm2) threshold current densities have been obtained from 3.1-mm-wide (cavity length=483 μm) nonplanar periodic quantum well heterostructure laser diode arrays grown by metalorganic chemical vapor deposition over a selectively etched corrugated substrate. The resulting nonplanar lateral active layer profile provides index guiding and suppresses lateral lasing regardless of device width.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100044
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  • 4
    Electronic Resource
    Electronic Resource
    Nonplanar index-guided quantum well heterostructure periodic laser array (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 350-352 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data are presented on nonplanar index-guided quantum well heterostructure periodic laser arrays grown by metalorganic chemical vapor deposition (MOCVD). The nonplanar array structure, formed by a single MOCVD growth over a selectively etched corrugated substrate, not only provides index guiding for the individual array elements, but also suppresses lateral lasing and amplified spontaneous emission for the entire array. As a result, the entire width of the device is utilized for optical emission, and no additional processing steps are required. Devices tested exhibit uniform emission and show no signs of lateral lasing or amplified spontaneous emission for array widths up to 3.3 times the cavity length. The processing required for device fabrication is therefore minimized by taking advantage of the properties of MOCVD growth over nonplanar substrates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99911
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  • 5
    Electronic Resource
    Electronic Resource
    Near- and far-field observations of transient behavior in pulsed graded barrier quantum well lasers (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2613-2615 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The pulsed behavior of both gain-guided and index-guided graded barrier quantum well lasers has been studied with near- and far-field lateral mode measurements at different pulse widths. Above threshold, gain-guided devices show a transition to predominantly index-guided operation as a result of thermally induced waveguiding. Similar devices with built-in real index guiding exhibit low threshold, stable mode operation, with no observable variations with pulse width.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337130
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  • 6
    Electronic Resource
    Electronic Resource
    Complementary self-aligned laser arrays by metalorganic chemical vapor deposition (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2633-2635 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A two-step metalorganic chemical vapor deposition growth technique has been used to fabricate multielement arrays of complementary self-aligned lasers using graded barrier quantum well active regions. This technique eliminates any possible difficulty associated with regrowth on a high composition AlGaAs layer by placing the interface outside the stripe region. The complex index guiding and resulting mode discrimination characteristics of self-aligned lasers stabilize the near- and far-field patterns of the array. Comparison studies between shallow mesa arrays and self-aligned arrays are described.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337138
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  • 7
    Electronic Resource
    Electronic Resource
    The effect of various buffer-layer structures on the material quality and dislocation density of high composition AlxGa1−xAs laser material grown by metalorganic chemical vapor deposition (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 5092-5097 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of various types of buffer layers on the generation and propagation of dislocations in epitaxial layers of high composition (x=0.85) AlxGa1−xAs grown by metalorganic chemical vapor deposition (MOCVD) on horizontal Bridgman (HB) and liquid-encapsulated Czochralski (LEC) substrates is examined. Bulk epilayers of high composition (x=0.85) AlxGa1−xAs and graded-barrier quantum-well laser structures with confining layers of the same composition were grown simultaneously on high-quality/low etch-pit density (EPD) HB substrates and comparatively lower quality/high EPD LEC substrates with one of four types of compositionally graded and/or superlattice buffer-layer structures. The bulk material was characterized by delineation and measurement of surface EPD and the observation of overall surface morphology. Data are also presented on the device characteristics of graded-barrier quantum-well laser diodes grown with these same buffer layers in order to determine the correlation between dislocation density and laser threshold current. The various buffer-layer structures were seen to be effective in reducing the defect density and improving the surface morphology of high composition epilayers grown on both HB and LEC substrates. The threshold-current density of the laser diodes, however, was independent of both the type of prelayer and/or substrate utilized.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340409
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  • 8
    Electronic Resource
    Electronic Resource
    Coherent 1 W continuous wave operation of large-aperture resonant arrays of antiguided diode lasers (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2914-2916 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Near-diffraction-limited cw operation at 1 W power level is demonstrated, for the first time, from all-monolithic, phase-locked diode-laser arrays. In pulsed operation purely diffraction-limited beams (0.4° lobewidth) are obtained from relatively large-aperture (120 μm) devices to power levels of 1 W, with 70%–75% of the energy in the central lobe at low drives. These record-high coherent powers are achieved from 20-element resonant-optical-waveguide arrays of antiguided diode lasers by significantly increasing the aperture width while maintaining strong discrimination against high-order array modes via Talbot-type spatial filters.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109195
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  • 9
    Electronic Resource
    Electronic Resource
    Antiresonant reflecting optical waveguide-type, single-mode diode lasers (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 503-505 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Antiresonant reflecting optical waveguide (ARROW)-type diode lasers have been demonstrated for the first time. The ARROW structure is made in the lateral direction (i.e., the plane of the junction) by two-step metalorganic chemical vapor deposition. Stable, diffraction-limited beam operation is achieved to 0.6 W peak pulsed power and 20× threshold. The power contained within the diffraction-limited beam pattern is 420 mW with 60% of the energy residing in the central, diffraction-limited lobe. Modal calculations for ARROW lasers confirm very strong intermodal discrimination. Theoretical calculations and preliminary experimental data show that up to 90% of the energy can be obtained in the central lobe (475 mW diffraction-limited power).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108475
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  • 10
    Electronic Resource
    Electronic Resource
    Above-threshold behavior of high-power, single-mode antiresonant reflecting optical waveguide diode lasers (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 7-9 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Above-threshold analysis of antiresonant reflecting optical waveguide (ARROW) diode lasers has been performed. One key finding is that preferential pumping of the (central) low-index core region dramatically enhances the device single-mode power capability, as a result of defocusing and subsequent radiation-loss increase for the first-order spatial mode. Stable, single-mode operation to drive levels (approximately-greater-than)10× threshold is predicted for 6-μm wide core devices, in excellent agreement with experiment. Similar performance is found to hold true for ARROW devices with cores as wide as 10 μm, although due to gain spatial hole burning, the far-field beam pattern experiences mild broadening. Study of triple-core ARROW structures of 20-μm-wide aperture shows stable fundamental-mode operation to (approximately-greater-than)10× threshold, thus raising the prospect for stable, single-mode reliable operation to power levels as high as 1 W cw. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114152
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