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  • 1
    Electronic Resource
    Electronic Resource
    Impurity induced disordered quantum well heterostructure stripe geometry lasers by MeV oxygen implantation (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 94-96 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data are presented on stripe geometry AlGaAs-GaAs graded barrier quantum well heterostructure lasers formed by MeV oxygen implantation and annealing. Low-dose implants are found to suppress lateral carrier diffusion but do not result in compositional disordering. High-dose implants form both a semi-insulating and a compositionally disordered region leading to index-guided buried-heterostructure laser operation. However, the concentration of oxygen which spreads laterally under the implantation mask during high-dose implants is sufficient to partially compensate the stripe region for narrow stripe widths and thereby significantly increases the threshold current.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102098
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  • 2
    Electronic Resource
    Electronic Resource
    p-channel negative resistance field-effect transistor (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1058-1060 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We experimentally demonstrate the first p-channel negative resistance field-effect transistor. Low-temperature current-voltage characteristics exhibit negative differential resistance in the drain circuit which is controlled by the substrate voltage. The negative differential resistance is attributed to the real-space transfer of holes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102564
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  • 3
    Electronic Resource
    Electronic Resource
    Photoluminescence linewidths in metalorganic vapor phase epitaxially grown ordered and disordered InAlGaP alloys (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 5397-5400 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dependence of the photoluminescent properties of In0.48(AlyGa1−y)0.52P alloys (0≤y≤0.5) on growth temperature and substrate misorientation off GaAs(100) has been studied. Samples were grown using low-pressure metalorganic vapor phase epitaxy. By studying the dependence of ordering behavior in InGaP as a function of substrate misorientation and growth temperature simultaneously, a very large range in low-temperature photoluminescence emission energy—135 meV—has been obtained. The photoluminescence linewidth exhibits a strong, continuous dependence on the extent of atomic ordering (the emission energy) in the alloys. The results indicate that inhomogeneity in the microstructure of the material (i.e., between "ordered'' domains and the "disordered'' matrix) is the dominant photoluminescence broadening mechanism. This investigation has allowed a significant optimization of the optical properties of these materials, including the narrowest low-temperature photoluminescent linewidths reported for all of the In(AlyGa1−y)P alloys exhibiting direct band gaps (4.2 meV for InGaP).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352354
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  • 4
    Electronic Resource
    Electronic Resource
    Nonplanar quantum well heterostructure window laser (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1634-1636 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data are presented on a nonplanar graded barrier quantum well heterostructure window laser formed by a single metalorganic chemical vapor deposition (MOCVD) growth. By utilizing a selectively etched substrate, a transparent window region is formed in the vicinity of the facets thereby relaxing the maximum power limit imposed by catastrophic optical degradation. The ultimate output power available from such devices is approximately 50% higher than from devices with the same structure but grown on unetched substrates. The processing required for device fabrication is minimized by taking advantage of the properties of MOCVD growth on nonplanar substrates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101307
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  • 5
    Electronic Resource
    Electronic Resource
    Characteristics of step-graded separate confinement quantum well lasers with direct and indirect barriers (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1964-1967 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data are presented on step-graded separate confinement quantum well lasers with Al0.85Ga0.15As outer confining layers, AlxGa1−xAs barriers and a 50-A(ring) GaAs quantum well grown by metalorganic chemical vapor deposition. By varying xb from 0.15 to 0.60, we show that, given an adequate optical waveguide confinement factor and sufficient cavity length, the collection of electrons in thin quantum wells with either direct or indirect barriers can be highly efficient, transfer of electrons from indirect barriers to thin direct wells does not degrade laser performance, and electron confinement in the separate confinement region plays no role in the operation of the laser.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347178
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  • 6
    Electronic Resource
    Electronic Resource
    MeV implantation masking using an aluminum gallium arsenide metal liftoff layer (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 982-983 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An alternative masking method for high-voltage ion implantation masking of compound semiconductors which incorporates an additional AlGaAs layer between a Pb/Cr/Au metal mask and the sample to be implanted is described. Following patterning by conventional techniques and implantation, the AlGaAs layer is selectively etched to remove the metal mask without damaging the underlying epitaxial structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343480
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  • 7
    Electronic Resource
    Electronic Resource
    The effect of various buffer-layer structures on the material quality and dislocation density of high composition AlxGa1−xAs laser material grown by metalorganic chemical vapor deposition (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 5092-5097 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of various types of buffer layers on the generation and propagation of dislocations in epitaxial layers of high composition (x=0.85) AlxGa1−xAs grown by metalorganic chemical vapor deposition (MOCVD) on horizontal Bridgman (HB) and liquid-encapsulated Czochralski (LEC) substrates is examined. Bulk epilayers of high composition (x=0.85) AlxGa1−xAs and graded-barrier quantum-well laser structures with confining layers of the same composition were grown simultaneously on high-quality/low etch-pit density (EPD) HB substrates and comparatively lower quality/high EPD LEC substrates with one of four types of compositionally graded and/or superlattice buffer-layer structures. The bulk material was characterized by delineation and measurement of surface EPD and the observation of overall surface morphology. Data are also presented on the device characteristics of graded-barrier quantum-well laser diodes grown with these same buffer layers in order to determine the correlation between dislocation density and laser threshold current. The various buffer-layer structures were seen to be effective in reducing the defect density and improving the surface morphology of high composition epilayers grown on both HB and LEC substrates. The threshold-current density of the laser diodes, however, was independent of both the type of prelayer and/or substrate utilized.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340409
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  • 8
    Electronic Resource
    Electronic Resource
    Nonplanar index-guided quantum well heterostructure periodic laser array (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 350-352 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data are presented on nonplanar index-guided quantum well heterostructure periodic laser arrays grown by metalorganic chemical vapor deposition (MOCVD). The nonplanar array structure, formed by a single MOCVD growth over a selectively etched corrugated substrate, not only provides index guiding for the individual array elements, but also suppresses lateral lasing and amplified spontaneous emission for the entire array. As a result, the entire width of the device is utilized for optical emission, and no additional processing steps are required. Devices tested exhibit uniform emission and show no signs of lateral lasing or amplified spontaneous emission for array widths up to 3.3 times the cavity length. The processing required for device fabrication is therefore minimized by taking advantage of the properties of MOCVD growth over nonplanar substrates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99911
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  • 9
    Electronic Resource
    Electronic Resource
    High-power nonplanar quantum well heterostructure periodic laser arrays (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1159-1161 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical pulsed powers of 8 W from a single uncoated facet and low (〈200 A/cm2) threshold current densities have been obtained from 3.1-mm-wide (cavity length=483 μm) nonplanar periodic quantum well heterostructure laser diode arrays grown by metalorganic chemical vapor deposition over a selectively etched corrugated substrate. The resulting nonplanar lateral active layer profile provides index guiding and suppresses lateral lasing regardless of device width.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100044
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  • 10
    Electronic Resource
    Electronic Resource
    Visible (657 nm) InGaP/InAlGaP strained quantum well vertical-cavity surface-emitting laser (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1830-1832 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the first visible (657 nm) vertical-cavity surface-emitting laser. The photopumped undoped structure was grown using low-pressure metalorganic vapor-phase epitaxy in a single-growth sequence on misoriented GaAs substrates. The optical cavity consists of an In0.54Ga0.46P/In0.48(Al0.7Ga0.3)0.52 P strained quantum-well active region and a lattice-matched In0.48(AlyGa1−y)0.52 P (0.7≤y≤1.0) graded spacer region, while the distributed Bragg reflectors are composed of Al0.5Ga0.5As/AlAs quarter-wave stacks. Room-temperature optically pumped lasing was achieved with a very low-threshold power, clearly demonstrating the viability of this new technology. These results provide the foundation for visible semiconductor laser-diode arrays for a number of applications including laser projection displays, holographic memories, and plastic fiber communication.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107178
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