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  • 1
    Electronic Resource
    Electronic Resource
    Preparation of TlCaBaCuO high-Tc superconducting thin films on LaAlO3 substrates (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 526-528 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pure 2122 phase and 2223 phase superconducting TlCaBaCuO thin films have been reproducibly prepared on (100)LaAlO3 substrates by dc magnetron sputtering using a pair of superconducting Tl2Ca2B2Cu3O10 targets and post-annealing at different temperatures. X-ray diffraction analysis indicates that the films are highly c-axis oriented perpendicular to the film surface for both types of the thin films. The critical transition temperature Tc(R = 0) = 98 K and critical current Jc(77 K)=1.0×105 A/cm2 can be obtained for 2122 phase films, and for 2223 phase films Tc(R = 0) = 115 K and Jc(77 K) = 5.5 × 105 A/cm2 can be obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350268
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  • 2
    Electronic Resource
    Electronic Resource
    Magnetic characterization of Fe60Sm40/(Fe96.7Ta3.3)N multilayer films (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6831-6833 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: FeSm/FeTaN hard/soft multilayers with well-defined in-plane uniaxial anisotropy have been grown. Exchange spring behavior is observed and its occurrence and character is correlated with component layer thicknesses and volume fractions. The dc demagnetization remanence technique is used to determine the irreversible changes in the magnetization of the exchange spring structure. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1359466
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  • 3
    Electronic Resource
    Electronic Resource
    An improved capacitive divider probe for plasma potential measurements in the Phaedrus tokamak (1991)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 62 (1991), S. 1494-1497 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: High bandwidth capacitive probes are useful tools for potentials measurements in the tokamak scrape off layer. An improved capacitive divider probe design with very high frequency bandwidth is shown. The gain of this system is between 0 and −8 dB for frequencies from 0.1 Hz to more than 100 MHz, with the −3 dB point at approximately 40 MHz. The probe structure, circuits, performance, and experimental results from the Phaedrus-T tokamak are given.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142474
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  • 4
    Electronic Resource
    Electronic Resource
    An investigation into the mechanism of pseudospark producing metal ion beams : The 8th international conference on ion sources (2000)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 675-677 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A multiplate pseudospark chamber, whose electrodes were fabricated with different metal materials, was designed and tested as a metal ion source. The ion beam implantation combined with Rutherford backscattering (RBS) measurement was used to understand whether these ion beams come from the anode plasma or the cathode plasma. The RBS measurements have demonstrated the following results: (1) pseudospark produced metal ion beams mainly consist of ions from the cathode materials; (2) the ion beam current increases rapidly with the pseudospark discharge voltage first and then saturates; and (3) the energy of the extracted metal ions is much less than the voltage between the anode and the cathode, therefore the high discharge voltage does not correspond to the high ion energy. A possible mechanism of pseudospark producing metal ion beams is discussed. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1150257
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  • 5
    Electronic Resource
    Electronic Resource
    Simulations of intense pulsed ion beam uniformity in a planar magnetically insulated ion diode : Papers from the Ninth International Conference on Ion Sources (2002)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 73 (2002), S. 857-859 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Using the self-consistent, 2-1/2-dimensional particle-in-cell MAGIC code, based upon the explosive emission model, we have simulated the characteristics of the proton flux extracted from a planar magnetically insulated diode with a 200-mm-wide and an 8 mm anode-cathode gap. Results of numerical calculation, e.g., the spatial distributions of the extracted proton current density vs time and the spatial distribution of particles in diode gap are presented at a diode voltage of 300 kV with 40 ns pulse duration and an externally insulating magnetic field of 0–4Bcrit. With the increase of the magnetic field, the uniformity of the extracted proton flux is significantly improved; however, the maximum of the proton current density and one of the proton energy density decrease from 150 to 45 A/cm2 and from 1.0 to 0.3 J/cm2, respectively, when B varied from 0 to 4Bcrit. The effects of the magnetic field on uniformity of the extracted proton flux are discussed in this article. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1427354
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  • 6
    Electronic Resource
    Electronic Resource
    Supercurrents in HgBa2CaCu2O6+δ and TlBa2CaCu2O7 epitaxial thin films (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3878-3880 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The availability of high-quality epitaxial thin films of HgBa2CaCu2O6+δ (Hg-1212) and TlBa2CaCu2O7 (Tl-1212) with high critical current densities (Jc) has made it possible to examine and compare the Jc of these species. Results reveal that the Jc of 1212 species have very similar temperature behavior at low fields, strongly suggesting that the 30 K shift in critical temperature (Tc) induced by the exchange of Hg and Tl in the 1212 structure is due largely to a change in charge carrier density and/or electronic band structure. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124210
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  • 7
    Electronic Resource
    Electronic Resource
    Cation exchange: A scheme for synthesis of mercury-based high-temperature superconducting epitaxial thin films (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1469-1471 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A cation-exchange process has been developed for growth of high-quality epitaxial thin films of highly volatile mercury-based high-temperature superconductors. By selecting epitaxial precursor matrices of TlyBa2CaCu2Ox (y=1,2) and annealing them in Hg vapor, c-axis-oriented epitaxial HgBa2CaCu2O6+δ thin films with superior quality were formed through Tl and Hg-cation exchange. At 110 K, these films can carry supercurrent density close to 1 MA/cm2 which is nearly an order of magnitude higher than the best reported previously. This cation-exchange technique also provides a general scheme for synthesis of other volatile compounds with predesigned structure and composition. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123583
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  • 8
    Electronic Resource
    Electronic Resource
    Formation of epitaxial Tl2Ba2CaCu2O8 thin films at low temperature in pure argon (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1845-1847 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Mirror-like Tl2Ba2CaCu2O8 thin films have been reproducibly prepared on (001)LaAlO3 substrates by dc magnetron sputtering using 80% argon and 20% oxygen and post-annealing at temperatures of 720–760 °C in 1 atm pure argon. X-ray diffraction patterns of θ-2θ scans, φ scans, and Read camera photographs prove that the thin films are strongly textured with the c-axis perpendicular to the substrate surfaces and epitaxially grown to the substrate with Tl2Ba2CaCu2O8(100) parallel to the LaAlO3(100). The zero resistance temperatures are in the range of 105.2–108.6 K for the 0.2–1.0-μm-thick films. The critical current density of 5.3×106 A/cm2 at 77 K has been obtained at zero magnetic field for a 0.4-μm-thick film.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110805
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  • 9
    Electronic Resource
    Electronic Resource
    High critical current density in epitaxial HgBa2CaCu2OX thin films (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2989-2991 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality superconducting HgBa2CaCu2Ox (Hg-1212) thin films have been reproducibly fabricated using cation-exchange method. The thin films have pure Hg-1212 phase and have smooth surface morphology. The superconducting transition temperatures of these films are in the range of 120–124 K. The critical current density Jc is up to 3.2×106 A/cm2 at 77 K and drops only by a factor of 2 at 100 K and self field. At 110 K, a Jc of 7.8×105 A/cm2 has been obtained. X-ray diffraction pole figures show that these films are epitaxially grown on LaAlO3(001) substrates, which is consistent with a χmin of 19% obtained using Rutherford backscattering/channeling analysis. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122653
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  • 10
    Electronic Resource
    Electronic Resource
    Intrinsic Josephson effect devices of TI-2212 thin films (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 480-481 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Intrinsic Josephson effect devices from Tl2Ba2CaCu2O8 (Tl-2212) thin films were investigated. The device was produced by epitaxially growing a Tl-2212 thin film on a LaAlO3 substrate with the surface cut at a small angle to the LaAlO3(001) plane, and by patterning a microbridge in the proper direction. The I–V characteristics of the microbridges exhibit large hysteresis at low temperatures, and the temperature dependence of the critical current Ic(T) is in good agreement with the theoretical Ambegaokar–Baratoff relation for superconductor–insulator–superconductor (SIS) junctions. The I–V curves also show multibranches for longer microbridges. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365842
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