ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Experimental and reduced dimensionality quantum rate coefficients for H2(D2)+CN→H(D)CN+H(D) (1990)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 93 (1990), S. 4730-4739 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: New experimental rate coefficients are reported for the H2(D2)+CN→H(D)CN+H(D) reactions over the temperature range 209 to 740 K for H2 and 250 to 740 K for D2. Previous reduced dimensionality reaction probabilities for the reaction with H2, and new ones for the reaction with D2 are used to obtain analogous rate coefficients. In addition, reaction probabilities and rate coefficients for vibrationally excited reactants H2(v=1), D2(v=1), or CN(v=1) are presented. Comparisons of the calculated rate coefficients are made with the new and previous experiments, especially those of Sims and Smith [Chem. Phys. Lett. 149, 565 (1988)].
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.458663
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Crystal morphology and phase purity of diamond crystallites during bias enhanced nucleation and initial growth stages (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3354-3360 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The crystal morphologies and phase composition of diamond crystallites during bias enhanced nucleation and initial growth stages in microwave plasma chemical vapor deposition were investigated. Diamond nuclei were first formed in the central regions of substrates and then propagated to the sample edges. During the course of bias nucleation, excessive ion bombardment induced secondary nucleation sites on the already formed nuclei. The secondary nucleation deteriorated the overall alignment of the growing crystals. Hence, the elimination of secondary nucleation and homogeneous nucleation over substrates are fundamental requirements for the deposition of large-area uniformly oriented diamond films. Decreasing reactant pressure was found to be effective for improving plasma homogeneity and consequently nucleation uniformity. The results of bias enhanced nucleation within a pressure range from 8 to 20 Torr showed that the lower pressure of reactants enlarged the area of oriented diamond films. However, the optimum bias and duration of nucleation was found to be specific for each pressure. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1289071
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Exciton transport and degenerate four wave mixing in topologically disordered systems (1993)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 98 (1993), S. 5899-5911 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The static and dynamical properties of excitons in a lattice with a random distribution of polarizable atoms are studied using Green's function techniques. Exciton transport is related to the configurationally averaged particle–hole Green's function which is calculated using the ladder diagram approximation. Degenerate four wave mixing (D4WM) using resonant pump beams and an off resonant probe is shown to provide a direct probe for exciton transport. A disorder induced extra resonance is predicted whose width is proportional to the exciton diffusion coefficient. Numerical calculations are presented for the diffusion coefficient and the D4WM signal as the excitation energy is tuned across the exciton band.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.464881
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Bulk-quantity Si nanosphere chains prepared from semi-infinite length Si nanowires (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 727-731 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bulk-quantity Si nanosphere chains have been fabricated. This is accomplished via the spheroidization of Si nanowires of semi-infinite lengths. The process has been extensively investigated by transmission electron microscopy. The nanosphere chains consisted of equally spaced Si crystalline nanospheres connected by Si-oxide bars. The transition from Si nanowires to Si nanosphere chains was determined by the annealing temperature, ambient pressure, initial Si nanowire diameters, and the oxide state of the outer layers of Si nanowires. The relationships between the geometry (size and spacing) of Si nanospheres, the initial state (diameter and oxide state) of Si nanowires, and the experimental conditions are discussed. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1328786
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Transmission electron microscopy study of stacking faults and the associated partial dislocations in pseudomorphic epilayers of ZnSe/GaAs(001) (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5506-5508 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: V-shaped double triangular faults in ZnSe/GaAs epilayers have been identified to be incomplete stacking fault pyramids and single stacking faults identified as stacking fault trapezoids. It is confirmed by transmission electron microscopy that 〈101〉 open boundaries of incomplete stacking fault pyramids are 30° Shockley partial dislocations. The closely spaced parallel acute and obtuse stair-rod dislocation pair in stacking fault trapezoids form a dislocation dipole. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363482
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Electrical and optical response of a very high frequency AlGaAs/GaAs heterojunction bipolar transistor (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3847-3849 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The current gain cutoff frequency of very high frequency AlGaAs/GaAs heterojunction bipolar transistors has been measured at 300 and at 20 K using the picosecond optoelectronic technique. These devices showed cutoff frequencies of 72 and 84 GHz at room temperature and at a fixture temperature of 20 K, respectively. Optical response measurements were also obtained at visible and infrared wavelengths. The visible optical response shows a FWHM of 14 and 9.5 ps at 300 and 20 K, respectively. The infrared (λ=850 nm) optical response, corresponding to deeper penetration, showed a FWHM significantly larger ((approximately-greater-than)50 ps) than the visible optical response.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357388
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Defect-enhanced second-harmonic generation in (SimGen)p superlattices (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2072-2074 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Second-harmonic generation (SHG) has been applied to study the influence of defects in short-period (SimGen)p strained-layer superlattices. With a misfit stacking fault defect density of ∼1010 cm−2 shown by transmission electron microscopy, it is found that the SH intensity increases by about one order of magnitude from that of the defect-free samples. We propose that the inhomogeneous strain field around the fault planes in the superlattice layers is responsible for this abrupt increase of SHG. The expected symmetry and the magnitude of the nonlinear susceptibility from these stacking fault defects are shown to be in agreement with the experimental observations. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121279
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Extremely low temperature formation of silicon dioxide on gallium arsenide (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 5788-5792 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article demonstrates the growth of silicon dioxide (SiO2) on a gallium arsenide (GaAs) substrate by use of the liquid phase deposition (LPD) method at extremely low temperature (∼40 °C). This method cannot only grow SiO2 but it can also obtain good quality and reliability due to the suppression of interdiffusion in such a low temperature process. The deposition rate of LPD-SiO2 on GaAs is up to 1265 Å/h. The refractive index of the LPD-SiO2 film on GaAs is about 1.42 with growth at 40 °C. When the LPD-SiO2 film on the GaAs substrate is used to fabricate a metal–oxide–semiconductor capacitor with a device area of 0.3 cm2, the surface charge density (Qss/q) is about 3.7×1011 cm−2 and the leakage current is 43.3 pA at −5 V. A proposed mechanism for the LPD of SiO2 on GaAs is also presented. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366445
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Symmetry study of the Mn-Si-Al octagonal quasicrystal by convergent beam electron diffraction (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 2120-2121 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The addition of a few percent of Al to the Mn4Si alloy improved the perfection of the octagonal quasicrystal and made it possible for us to determine its point group symmetry as being 8/m or 8/mmm by convergent beam electron diffraction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99754
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Silicon nanowires prepared by laser ablation at high temperature (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1835-1837 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon nanowires have been synthesized in high yield and high purity by using a high-temperature laser-ablation method with growth rates ranging from 10 to 80 μm/h. Transmission electron microscopic investigation shows that the nanowires are crystalline Si, and have diameters ranging from 3 to 43 nm and length up to a few hundreds microns. Twins and stacking faults have been observed in the Si core of the nanowires. The lattice structure and constant of the nanowires as determined from x-ray diffraction (XRD) are nearly identical to those of bulk Si, although the relative XRD peak intensities are different from those of randomly oriented Si crystallites. Raman scattering from the nanowires shows an asymmetric peak at the same position as that of bulk crystalline silicon. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121199
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...