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  • American Institute of Physics (AIP)  (3)
  • 1
    Electronic Resource
    Electronic Resource
    Laser ablation of ZnSe using pulsed 193-nm irradiation (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2001-2008 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Plasma jets have been produced by the pulsed laser ablation of bulk ZnSe targets. Electrical measurements show that a sudden increase in ion yield occurs at a threshold pulse energy density of 210 mJ cm−2 pulse−1. The plasmas obtained do not exhibit overall electrical neutrality, but have a net positive charge, while the ZnSe target develops a corresponding negative charge. The initial ion translational kinetic energies are also found to be very low, 〈1 eV. These observations suggest that the ablation process is the result of a buildup of photogenerated holes at the semiconductor surface sufficient to result in disintegration of the lattice and rapid vaporization at low thermal energies.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349485
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  • 2
    Electronic Resource
    Electronic Resource
    Optical spectroscopy of epitaxial Ga2Se3 layers from the far infrared to the ultraviolet (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3196-3199 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial Ga2Se3 layers were grown on GaP (100) and GaAs (100) by metal–organic chemical vapor deposition and the heterovalent exchange reaction, respectively. Measurements of the sample reflectance were carried out in the spectral range from 70 to 50 000 cm−1 (∼10 meV−6.2 eV). The dielectric functions in the far infrared were determined from the reflectance measurements and are dominated by strong phonon features of the substrate and the layers. Substrate related multiphonon absorbances and Fabry–Perot interference dominate the mid infrared range. The spectra in the visible spectral range reveal Fabry–Perot interferences up to 2.6 eV indicating a fundamental band gap energy in the blue spectral range in contrast to the previously reported lower value of 2 eV. Further electronic transition energies were observed at 3.9, 4.7, and 5.0 eV. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361264
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  • 3
    Electronic Resource
    Electronic Resource
    Controlling the sulphur content of ZnSe1−ySy epitaxial layers grown by metalorganic chemical vapor deposition using diethyl selenide, hydrogen sulphide, and dimethylzinc (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2835-2837 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial layers of ZnSe1−ySy on (100) GaAs substrates have been grown by metalorganic chemical vapor deposition. The reactants used are dimethylzinc (DMZn), hydrogen sulphide (H2S) and diethylselenide (DESe). The DESe has been used rather than the more usual selenium precursor, hydrogen selenide (H2Se). Results on the relationship between the sulphur incorporated into the epilayer and the group VI gas phase reactant molar ratio show a more linear relationship than previously found for the atmospheric pressure growth of this material using the hydrides. Despite the higher growth temperature (450 °C) and nonoptimized conditions the epilayers are shown to be comparable with those grown with hydrides and at lower growth temperatures (280 °C). Low-temperature (10 K) photoluminescence gave near-band-edge emission linewidths of 6.8 meV for the ZnSe0.87S0.13 ternary.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105875
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