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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 6060-6062 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The g factor and 4π Ms for epitaxially grown Fe16N2(001)/In0.2Ga0.8As(001) films have been investigated by ferromagnetic resonance along with Fe films for comparison. Angular dependence of the resonance fields in the film plane of Fe16N2 films had four-fold symmetry, which was attributed to the in-plane anisotropy. The g factor for Fe16N2 films was about 2.0, which means that the magnetic moment originates mainly from spin. Thus, nothing unusual is seen about the g factor. The g factor for Fe films was about 2.1, which is very similar to the value reported previously. 4πMs values for Fe16N2 and Fe films were 2.8×104 and 2.1×104 G, respectively, which agree well with the previous data obtained by a vibrating sample magnetometer. This confirmed that Fe16N2 has a giant magnetic moment. Torque magnetometer measurements showed that Fe16N2 films have a larger perpendicular anisotropy of 7.8×106 erg/cm3, which can originate from its bct structure.
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  • 2
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The anisotropy energies of Y2Fe14B, Y2Co14B, Y2Fe14−xCoxB, and La2Co14B are discussed with reference to the band model. The energy bands exclusive and inclusive of the p bands in B are formulated in consideration of the spin-orbit interaction and exchange splitting. The anisotropy constant K1 is estimated through the difference between the calculated electronic energies with the magnetization parallel to [001] and [100]. In Y2Fe14B, the calculated K1 is much the same as the experimental result, and in Y2Co14B, it agrees with the experimental result. In Y2Fe14−xCoxB, the calculated K1 inclusive of the p bands in B is much the same as the experimental result. Finally, the anisotropy energy of La2Co14B is discussed by taking into account the 4f bands just above the Fermi level.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 4696-4698 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical resistance of single-crystalline CeAs, CeSb, and CeBi has been measured under hydrostatic pressure. In CeAs and CeSb, pressure enhances the change of overall features in the resistance-temperature R(T) curves. Resistance anomalies associated with magnetic phase transitions are observed and are found to be sensitive to pressure. It is noted that the R(T) curve of CeAs at ∼3 GPa is similar to that of CeSb at ambient pressure.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 6517-6519 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In undoped semi-insulating GaAs, we have found that the quenching phenomena of photoconductance and infrared absorption are enhanced by proton irradiation above 1013 /cm2, accompanied by an increase in near-band-edge infrared absorption. These phenomena disappear with the annihilation of the proton-induced near-band absorption by annealing at 350 °C. It is suggested that the enhanced photoquenching phenomena arise from the increase in the quenchable component due to the transition from the ionized midgap electron trap (EL2+) to the neutral EL20.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 5362-5367 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Melt-regrowth properties of 60-nm-thick silicon films were characterized in the case of electrical-current-induced joule heating. The electrical energy accumulated at a capacitance caused melting of the silicon films via joule heating with a maximum intensity at 1.5×106 W/cm2. The melt-regrowth duration increased from 6 to 75 μs as the capacitance increased to 0.05–1.5 μF. Crystalline properties of the silicon films were also investigated. 7 μm long crystalline grains with the (110) preferential crystalline orientation were observed using a transmission electron microscope. The tensile stress at 3.4×108 Pa remained in the films. The analysis of electrical conductivity resulted in a density of defect states of 3.5×1016 cm−3 in the films. The product of the generation efficiency, the carrier mobility and the average carrier lifetime was estimated to be ∼10−3 cm2/V. © 2001 American Institute of Physics.
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  • 6
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The performance of the Tokamak Fusion Test Reactor [D. Meade and the TFTR Group, in Plasma Physics and Controlled Nuclear Fusion Research, Washington, D.C., 1990 (International Atomic Energy Agency, Vienna, 1991), Vol. I, pp. 9–24], as defined by the maximum fusion power production, has been limited, not by confinement, but by stability to pressure-driven modes. Two classes of current profile modification have been investigated to overcome this limit. A new technique has been developed to increase the internal inductance of low-q (q(approximate)4), high-current (Ip〉2MA) plasmas. As was the case at higher edge q, the disruptive β limit has been found to increase roughly linearly with the internal inductance, li. Plasmas with hollow current profiles, i.e., reversed shear, are also predicted and experimentally observed to have increased stability in the negative shear region to ballooning and kink modes. However, performance of these plasmas is still limited by pressure-driven modes in the normal shear region. © 1997 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 816-816 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Stationary magnetic perturbations (SMPs) in tokamaks may consist of (1) static magnetic field errors, (2) dynamic magnetic field errors, and (3) stationary MHD modes (or locked mode). The diagnostic aimed to detect the latter two classes of SMPs on the TFTR tokamak has two pairs of sensors, each consisting of a saddle loop for measuring predominantly radial field and auxiliary loops for measuring predominantly toroidal and vertical fields. Members of each pair are placed 180° apart toroidally. Predominantly n=1 SMPs are found in various discharges including ohmic discharges. Abrupt changes in SMP signals precede a "tail-end'' disruption, suggesting a causality relationship. Variations in the SMP signals are also coincident with severe performance degradation of super shots and pellet injected discharges. An analysis of individual and paired signals appears to indicate that these SMPs are dynamic field errors as well as stationary MHD modes. © 1995 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 2901-2907 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The transient hot-wire method for simultaneously measuring the thermal conductivity and thermal diffusivity of materials has been modified to improve the accuracy of the measurements. In this new experimental method, called the multicurrent method, several constant current values are used for heating the hot wire in order to determine accurately the thermal transport quantities. The details of the multicurrent method are precisely described, and examples of experiments using the method with pure water, electrolytic solution, and ionic conducting glasses are given. It is shown that this method can be used both for liquid and solid materials; a relatively small amount of the specimen material is sufficient for each experiment; the material can be insulating as well as highly ionic-conductive; the accuracies of the determined thermal conductivity and the thermal diffusivity values are, respectively, around ±1% and ±5%.
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 122-130 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Viscoelastic solids with high viscosity were experimentally studied with the intention of having them deformed under uniform shear stress. A kind of sandwich method was developed for applying a constant shear stress to a specimen, and its deformation was observed optically using heterodyne interferometry with a sensitivity of 10 nm in displacement measurement. Time-dependent deformation data were analyzed on the basis of a mechanical model of anelasticity plus viscosity. Viscosity in the range of 108–1014 Pa⋅s could be determined at temperatures of 20–200 °C. Through a simulation using the finite element method together with an experiment visualizing the deformation, the specimen deformation was shown to be of an almost uniform shear mode. Experiments were performed to determine the temperature dependence of viscosity for several kinds of glasses near their glass transition Tg, and the determined viscosity values were about 107 Pa⋅s at Tg. The viscosity values measured by a rotation disk viscometer were in good agreement with the present data. The viscosity of some glasses was also measured by the beam bending and penetration methods, and values of 109–1012 Pa⋅s at Tg were obtained. The large discrepancy between the two kinds of data was considered. © 1996 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 6642-6647 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In order to determine the value of the intrinsic magnetic moment of the α ‘ phase, the films of nitrogen-martensite with various N content were fabricated under various reactive sputtering conditions. The magnetic moment of (α ‘+α')-Fe16N2 films is discussed in connection with the change of the unit-cell volume of the bct structure and the degree of N site ordering in nitrogen-martensite. As a result, it is found that (1) the same structure as bulk α ‘-Fe16N2 is realized in the present films, (2) the saturation magnetization σs of the α' phase increases about 4% with increasing unit-cell volume of the α' phase, (3) the degree of N site ordering from α' to α ‘-Fe16N2 does not much affect σs, and (4) the experimentally obtained maximum value of σs for the (α ‘+α')-Fe16N2 film was 232 emu/g. The intrinsic value of σs in the α ‘ phase (in the perfectly ordered state) is proposed to be no more than 240 emu/g at 300 K.
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