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  • 1
    Electronic Resource
    Electronic Resource
    Critical current enhancement in proton-irradiated Tl2CaBa2Cu2O8 films (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 1119-1121 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured changes in the superconducting transition temperature Tc and critical current density Jc of epitaxial Tl2CaBa2Cu2O8 films upon exposure to 2 MeV protons. Jc was measured inductively at 4.2 and 77 K and in fields of H=0 and 0.2 T. At 77 K and H=0, Jc decreases monotonically with increasing fluence Φ. The rate of decrease is about 1.8 times greater than for YBa2Cu3O7 films, even though the rate of change of Tc with Φ is comparable. At 4.2 K, Jc is initially enhanced, even at H=0. The maximum observed increase is 34% (to 8 MA/cm2) at Φ≈1016 protons/cm2 and H=0.2 T. This enhancement is attributed to pinning of magnetic flux lines by proton-induced defects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347384
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  • 2
    Electronic Resource
    Electronic Resource
    Reduction of vibrational noise from continuously filled 1 K pots (1998)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 4176-4178 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We have examined the vibrational noise originating from 1.3 K pumped helium chambers (1 K pots) that are continuously filled from the 4.2 K bath through an impedance. The noise can be largely eliminated by either heating the pot or by heating the impedance directly. Noise in 1 K pots has detrimental consequences for the operation of audio frequency torsional oscillators and for high precision thermometry. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149266
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  • 3
    Electronic Resource
    Electronic Resource
    Resistivity of static and antistatic insulators from surface charge measurement (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5782-5785 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method for determining surface charge decay [Q(t)], using a coaxial cylindrical capacitor arrangement and an electrometer interfaced to a PC, has been adapted so as to perform relatively straightforward measurement of resistivity in the surface region of insulators. A charge transport model is presented, based on Mott–Gurney diffusion, which allows interpretation of the data especially for the initial phase of surface charge decay. Resistivity measurements are presented for glass, mica, plexiglas, and polyethylene, covering the range 109–1018 Ω m, as an illustration of the useful range of the instrument for static and antistatic materials, particularly in film or sheet form. Values of surface charge diffusion constants have also been determined for the materials. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359223
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  • 4
    Electronic Resource
    Electronic Resource
    Microwave surface resistance in Tl-based superconducting thin films (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1357-1359 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report measurements of microwave surface resistance in Tl-based superconductor thin films made by laser ablation followed by a post-deposition thermal process. The films were measured by using cavity methods. The data at 9.5 and 148 GHz indicate that the residual resistance scales as f2. At 77 K, the 9.5 GHz surface resistance is ten times smaller than oxygen-free high-conductance copper at the same temperature and frequency. The 9.5 GHz measurement also indicates that the film-substrate interface does not cause more microwave loss than the film surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102475
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  • 5
    Electronic Resource
    Electronic Resource
    Ion beam hydrogenation of amorphous silicon (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1436-1438 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A Kaufman ion beam source was used to implant hydrogen atoms into glow-discharge-deposited amorphous silicon materials in which the hydrogen content had been driven out by heating. We found that the hydrogen atoms introduced by this low-energy (less than 700 eV) ion implantation method bonded predominantly as SiH. An air mass one, photo-to-dark-conductivity ratio as high as 5.6×105 has been obtained with hydrogen-implanted materials. No light-induced reduction of the photo- and dark conductivities has been observed in these materials after 20 h of AMl illumnination.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98649
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  • 6
    Electronic Resource
    Electronic Resource
    Mercury annealing of reactive ion etching induced p- to n-type conversion in extrinsically doped p-type HgCdTe (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 5555-5557 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Mercury annealing of reactive ion etching (RIE) induced p- to n-type conversion in extrinsically doped p-type epitaxial layers of HgCdTe (x=0.31) has been used to reconvert n-type regions created during RIE processing. For the RIE processing conditions used (400 mT, CH4/H2, 90 W), p- to n-type conversion was observed using laser beam induced current (LBIC) measurements. After a sealed tube mercury anneal at 200 °C for 17 h, LBIC measurements clearly indicated that no n-type converted region remained. Subsequent Hall measurements confirmed that the material consisted of a uniform p-type layer, with electrical properties equivalent to that of the initial as-grown wafer (NA−ND=2×1016 cm−3, μ=350 cm2 V−1 s−1). © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367389
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  • 7
    Electronic Resource
    Electronic Resource
    Ion beam rehydrogenation and post-hydrogenation of a-Si:H (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 1604-1607 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the rehydrogenation and post-hydrogenation of a-Si:H using a Kaufman ion beam source. The achievement of an air-mass-one (AM1), photo-to-dark conductivity ratio of 5.6×105 with a rehydrogenated a-Si:H sample was reported earlier [Y. S. Tsuo, E. B. Smith, and S. K. Deb, Appl. Phys. Lett. 51, 1436 (1987)]. In this communication we report recent results of the rehydrogenation study and new results of a study of the post-hydrogenation of amorphous silicon deposited by glow discharge at 480 °C. AM1 photo-to-dark conductivity ratios as high as 9.5×106 (with a photoconductivity of 8.6×10−6 Ω cm−1) and 1.1×105 (with a photoconductivity of 6.3×10−6 Ω cm−1) have been obtained with a rehydrogenated sample and a post-hydrogenated sample, respectively. We also report the results of the hydrogen depth profile and photostability measurements of these samples.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341800
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  • 8
    Electronic Resource
    Electronic Resource
    Critical-current enhancement in particle-irradiated cuprate semiconductors (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2600-2602 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Detailed measurements have been made of the magnetic field (0〈H〈6 T) and temperature (10 K〈T〈100 K) dependencies of the critical current density jc in Tl2CaBa2Cu2O8 films before and after irradiation with incremental fluences (0〈Φ〈3×1016 cm−2) of 2 MeV protons. The results are interpreted quantitatively in terms of radiation-induced changes in (1) the critical temperature, (2) the rate of thermal flux creep, and (3) local scale superconductivity. Radiation-induced enhancements in jc are described by an expression which allows the fluence that maximizes jc to be predicted as a function of H, T, pinning energy, and particle type.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105915
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  • 9
    Electronic Resource
    Electronic Resource
    Estimation of doping density in HgCdTe p-n junctions using scanning laser microscopy (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 52-54 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Quantitative assessment of p- to n- type conversion due to reactive ion etching (RIE) of p-type Hg0.71Cd0.29Te is presented using laser-beam-induced-current (LBIC) measurements. For the RIE processing conditions used (390 mT, CH4/H2, 0.4 W/cm2), n-type conversion was observed in extrinsic arsenic-doped p-type Hg0.71Cd0.29Te which had previously undergone a Hg anneal to eliminate Hg vacancies. Effective doping density of the n-type converted region is determined by fitting a theoretically determined LBIC signature to the measured LBIC signal over a temperature range 80–300 K. Effective n-type doping density is the only fitting parameter used in the simulation, which was carried out using a commercial semiconductor device modeling package (SEMICAD™ DEVICE). This noncontact experimental technique promises to be a useful tool in the characterization of p-n junction diodes in HgCdTe, and for studying the precise nature of p to n conversion in p-type HgCdTe. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120642
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  • 10
    Electronic Resource
    Electronic Resource
    The very fast multipole method (1994)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 101 (1994), S. 8870-8876 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The fast multipole method (FMM) has become an important alternative to traditional methods such as the Ewald method for computing the long-range interactions necessary to simulate charged or dipolar systems. In this paper, we present an improvement of this method, which we shall call the very fast multipole method (VFMM). The VFMM is shown to be a factor of about 1.2 faster than the FMM for two-dimensional systems and a factor about 2–3 times faster for three-dimensional systems without losing any accuracy for the worst case error.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.468079
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