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  • American Institute of Physics (AIP)  (4)
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 316-319 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In situ processing of YBa2Cu3O7−x (YBCO) superconducting thin films by pulsed laser evaporation is a technique critically dependent on the processing conditions (substrate temperature, oxygen partial pressure, etc.), and on the deposition setup, including the oxygen nozzle geometry required for incorporation of oxygen. It has been found necessary to have the oxygen nozzle directed toward the substrate during deposition for growth of high-quality superconducting thin films without further annealing [R. Singh et al., Appl. Phys. Lett. 55, 2351 (1989)]. We have taken optical emission spectra of YBCO plasma during the following deposition conditions: (1) In vacuum, (2) in 200 mTorr oxygen ambient with the oxygen nozzle directed toward the substrate, (3) in 200 mTorr oxygen ambient with oxygen nozzle directed toward the target, and (4) with the +300 V biasing ring interposing the target and the substrate. Our results show that enhanced formation of YO and CuO might lead to the growth of thin film at a lower substrate temperature under the biasing condition. A strong dependence of the Cu i (324.75 nm) neutral peak intensity and of the appearance of the molecular peaks such as YO on different deposition geometry is seen. These results provide important insight into the characteristics of plasma transport and deposition by the pulsed laser evaporation technique.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 3173-3175 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The localized formation of continuous silicide layers via solid state reaction of nickel atoms with ion implantation preamorphized silicon is described. Ni films 12 nm thick were evaporated on 65 nm deep amorphized surface layers. The silicidation reaction was induced by two stage thermal annealing at 360 and 400 °C, well below the solid phase epitaxial regrowth temperature for amorphous Si and the normal NiSi2 formation temperature. Rutherford backscattering with channeling, XTEM, and four-point-probe measurements were used to determine the structure, interfacial morphology, composition, and resistivity of the silicide films. After the lower temperature annealing stage a continuous layer of NiSi2 is formed with an underlying residual amorphous region located above the crystalline substrate. During a second annealing the residual amorphous areas recrystallize epitaxially with respect to the substrate via lateral silicide growth. The process leads to formation of a continuous 35 nm thick nickel disilicide layer completely confined within the original amorphous region. Silicide resistivity was 44 μΩ cm. The process may be viewed as a low-temperature process enhancement to self-aligned silicide (SALICIDE) technology since silicide growth proceeds only on preamorphized areas of the silicon substrate.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1933-1935 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter we examine the interdiffusion and reaction of deposited cobalt layers during the formation of nanoscale (〈35 nm) silicide films on heavily phosphorus doped polycrystalline silicon films. The onset of morphological instability is indicated by an increase of layer resistivity. Cross-section transmission electron micrographs of high resistance films, which were formed by rapid thermal annealing at 700 °C for 30 s, show a series of disconnected "islands'' of CoSi2 with or without a highly disordered (amorphous) Si-rich top surface layer. A continuous band of voids, attributed to the Kirkendall effect and to phase transformation induced volume changes, initially appear at the CoSi/CoSi2 interface. In the highly agglomerated films, these voids separate the buried CoSi2 islands and buried polycrystalline Si from the disordered surface layer. The sequence of events is analyzed in terms of grain boundary diffusion, grain boundary grooving, and the impact of phosphorus concentration (∼1020 cm−3) on Si diffusivity.
    Type of Medium: Electronic Resource
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  • 4
    Publication Date: 2014-08-30
    Description: Detailed investigation on the ground-state magnetic properties of Ni 2.04 Mn 1.36 Sn 0.6 alloy is reported. The sample undergoes martensitic type structural transformation from a cubic austenite phase to an orthorhombic martensite phase on cooling around T M  = 220 K. It orders ferromagnetically just above room temperature with T C  = 310 K. The phases above and below T M are predominantly ferromagnetic, although incipient antiferromagnetic correlations have been mooted between the Mn atoms sitting at two different crystallographic sites. The zero-field-cooled magnetic state shows a step like anomaly around T B  = 100 K, and the sample is found to show clear signature of spin glass like behaviour below this point. It is also associated with considerable exchange bias effect below T B , where horizontal shift of isothermal magnetization loop is observed in the field-cooled state. Apart from exchange bias, there exists large thermoremanent magnetization. Interestingly, the thermoremanent magnetization obtained by cooling the sample from above and just below the first order martensitic transition failed to show any sizable change, which rules out any major role of field induced arrest across the first order transition. The observed thermoremanent magnetization is presumably due to the effect of pinning of uncompensated spins in this magnetically inhomogeneous system with random ferromagnetic as well as antiferromagnetic bonds on field cooling through the onset point ( T B ) of the spin-glass like state.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
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