Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
64 (1988), S. 922-925
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The use of thermal oxides of AlxGa1−xAs (0≤x≤1) as masking materials for selective-area epitaxy by organometallic chemical-vapor deposition has been investigated. It was found that the thermal oxide of GaAs is only applicable for low growth temperatures (≤600 °C), and the addition of aluminum significantly improves the thermal stability of the oxide. The oxide of Al0.4Ga0.6As is suitable for high-temperature deposition, but there are criteria for the thickness and oxidation temperature. Thin layers of AlAs oxidized at 475 °C are excellent masks and allow precise thickness control. Promising results of selective-area deposition using these aluminum oxide masks have been obtained. High-quality single crystal grew in mask openings uniformly surrounded by dense and fine-grain polycrystalline deposits, producing a planar duplication of the original pattern.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.341894
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