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  • 1
    Publication Date: 2015-02-12
    Description: We report the effect of relaxation-type self-induced temperature oscillations in the system of two parallel plates of SiO 2 and VO 2 which exchange heat by thermal radiation in vacuum. The non-linear feedback in the self-oscillating system is provided by metal-insulator transition in VO 2 . Using the method of fluctuational electrodynamics, we show that under the action of an external laser of a constant power, the temperature of VO 2 plate oscillates around its phase transition value. The period and amplitude of oscillations depend on the geometry of the structure. We found that at 500 nm vacuum gap separating bulk SiO 2 plate and 50 nm thick VO 2 plate, the period of self-oscillations is 2 s and the amplitude is 4 K, which is determined by phase switching at threshold temperatures of phase transition.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
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  • 2
    Publication Date: 2015-12-01
    Description: We present a micromagnetic study on the eigen excitations of an artificial skyrmion crystal, which has been experimentally confirmed to be stable at room temperature without the need of any Dzyaloshinsky-Moriya interaction (DMI). Three in-plane rotational modes and one breathing-type mode are identified. We find the intrinsic origin of the dynamics of skyrmion crystal is the nontrivial magnetic texture instead of DMI. And the rotational direction of a skyrmion is solely determined by the sign of the skyrmion number, irrespective of its circulation sense, evidencing the topological nature of the magnetic skyrmion.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
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  • 3
    Publication Date: 2014-08-13
    Description: A type of metal-dielectric multilayered structures is investigated theoretically and experimentally for achieving optical transparency with a high electrical conductivity. The structure in our demonstrated case comprises of two coupled metal-dielectric-metal planar optical resonators with metal-layer thicknesses near to its skin depth. Simulations show that the maximum transmittance for visible light can easily reach 90% for silver-based structures. Experimentally, the sample fabricated exhibits a transmission window with a bandwidth of 150 nm and a maximum transmittance of 76% around 643 nm wavelength at normal incidence. Its sheet resistance is measured to be less than 10Ω/□, much smaller than that of common indium-tin-oxide films. Transparent conductors functioning for blue light and even for the whole visible light are also shown to be theoretically possible. Owing to their simple fabrication procedure as well as design flexibility, such a layered structure can serve as a compelling alternative as transparent conductors for optoelectronic devices, especially for liquid-crystal displays and light-emitting diodes.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
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  • 4
    Publication Date: 2015-03-04
    Description: Magnetic, dielectric, and magnetoelectric properties have been investigated in the polycrystalline Mn 4 Nb 2 O 9 . Under zero magnetic fields, no dielectric anomaly and electric polarization are observed in this compound. When the sample is exposed in magnetic field, finite dielectric peaks and electric polarization are induced, which increase with increasing magnetic field, showing magneto-dielectric and magnetoelectric effects. The origin of magnetoelectric coupling of this compound has been discussed.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 6637-6642 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed a substrate biased plasma enhanced chemical vapor deposition technique to fill high aspect ratio submicron gap in first metal contact layer. In this technique, active ion deposition from tetraethylorthosilicate and oxygen and ion bombardment from oxygen and argon ions occurred concurrently to fill 0.5 μm height/0.5 μm space aluminum patterns on silicon wafer without forming soft spots and keyholes. The effects of argon ions to the modification of surface topography are discussed. The deposited films have a low residual stress (〈 −3 × 109 dyne/cm2) and wet etching rate. The properties of the deposited films have been evaluated by infrared spectroscopy and triangular voltage sweeping technique.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 3628-3636 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electron energy relaxation in space has been investigated for electropositive Ar and electronegative SiH4 discharges by a 1D Particle-in-cell/Monte Carlo code. The ionization rate has been studied since this rate is strongly influenced by the energy relaxation mechanism. The ionization rate in the two kinds of discharges at a low pressure (30 mTorr), a low power (8 W), and a low frequency (13.56 MHz) is regarded as the reference case. The effects of pressure, power, and frequency on the ionization rate have been observed and compared between the two types of discharges. With the pressure increasing from 30 to 400 mTorr, in the case of the argon discharge the ionization peak moves from the plasma bulk (nonlocal behavior of the electron energy distribution function) towards the momentary cathodic presheath (local behavior). In addition to a similar variation of the ionization rate, in the silane discharge an ionization peak occurs near the momentary anodic presheath, and at the high pressure the ionization in the plasma bulk is still considerable. The power can only influence the ionization rate quantitatively. The effect of frequency on the ionization rate is similar for both kinds of discharges. With increasing frequency the ionization rate tends to a somewhat local character, i.e., the ionization appears closer to the momentary cathode. This is attributed to the fact that at the high frequency a bulk electric field in the bulk is found clearly out of phase with the sheath fields, and the energetic electrons are pushed towards the cathode earlier in space. Meanwhile, in the silane discharge the distinctive ionization, which is strongly present at the anodic presheath and in the plasma bulk at low frequency, almost disappears. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 4997-4999 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dependence of the time decay of magnetization on orientation ratio was investigated for longitudinal Co–alloy thin film media. The coercivity orientation ratio was controlled by the degree of mechanical texture. For oriented samples, it was found that the remanent magnetization along the circumferential direction decayed faster with time than that along the radial direction when the applied reverse magnetic field was near the remanent coercivity. However, the remanent magnetization along the circumferential direction decayed more slowly with time than that along the radial direction when the applied reverse magnetic field was less than roughly half the remanent coercivity. Anisotropic interactions and magnetic anisotropy distributions appear to be the cause for the different time decay of magnetization along the circumferential and radial directions for oriented media. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 3988-3992 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoexcited defect clusters in the bulk of KH2PO4 crystals are investigated using a microscopic fluorescence imaging system with 1 μm spatial resolution. The observed defect cluster concentration is approximately 104–106 per mm3 depending on the crystal growth method and sector of the crystal. The intensity of the emission clusters varies widely within the image field while a nearly uniformly distributed background is present. Spectroscopic measurements provided information on the emission characteristics of the observed defect population. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 3016-3019 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nanodefects were artificially introduced into a fused silica surface by nanoindenting with a commercial atomic force microscope. The sample was illuminated in a total internal reflection configuration and evanescent waves were detected by a near-field scanning optical probe in the constant tip-sample separation mode. The observed contrast in optical images was attributed to the strain fields associated with the nanoindents. Thus the optical image directly maps out the strain distributions associated with these nanoindents. Optical images were taken at different polarizations of the incident light (s and p). Due to different field distributions near the sample surface for the two polarizations, strain distributions at different depths were probed. The spatial resolution of this technique was limited by the probe aperture size and detector sensitivity. This technique may be a useful tool to study laser-induced damage mechanisms in optical materials at the submicron scale.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1816-1818 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fe/Mo multilayers have been prepared by magnetron sputtering. Giant magnetoresistance (GMR) has been found in the samples with an antiferromagnetic interlayer coupling. The magnetoresistance (MR) ratio exceeds 12% at 4.2 K, and it oscillates as a function of Mo spacer thickness. The oscillation period is about 10–12 A(ring), which is consistent with the case of the reported Kerr effect. The results suggest that the presence of antiferromagnetic coupling and the absence of GMR are the result of the sharp interfaces, and that relatively rough interfaces and moderately thin Fe layer thickness are the key factors for enhancing MR in the sputtered films. © 1995 American Institute of Physics.
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